AP01L60P A-POWER | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS 600/650/700V ▼ Repetitive Avalanche Rated RDS(ON) 2.4Ω ▼ Fast Switching ID ▼ Simple Drive Requirement

Description

V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG TJ Operating Junction Temperature Range Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. ℃/W Data & specifications subject to change without notice 20030332 AP04N70BP 100 -55 to 150 Parameter Parameter Rating 600/650/700 - /A/H 2.5 Storage Temperature Range -55 to 150 62.5 Linear Derating Factor 0.5 AP04N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 package is universally preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. ± 30 G D S G D S TO-220

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA / - 600 V VGS=0V, ID=1mA / A 650 V VGS=0V, ID=1mA / H 700 V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.6 V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A 2.4 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA V gfs Forward Transconductance VDS=10V, ID=2A 2.5 S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V uA Drain-Source Leakage Current (Tj=150oC) VDS=480V,VGS=0V 100 uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge3 ID=4A 16.7 nC Qgs Gate-Source Charge VDS=480V 4.1 nC Qgd Gate-Drain ("Miller") Charge VGS=10V 4.9 nC td(on) Turn-on Delay Time3 VDD=300V ns tr Rise Time ID=4A 8.3 ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V 23.8 ns tf Fall Time RD=75Ω 8.2 ns Ciss Input Capacitance VGS=0V 950 pF Coss Output Capacitance VDS=25V pF Crss Reverse Transfer Capacitance f=1.0MHz pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V A ISM Pulsed Source Current ( Body Diode )1 A VSD Forward On Voltage3 Tj=25℃, IS=4A, VGS=0V 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A. 3.Pulse width <300us , duty cycle <2%. Ordering Code AP04N70BP- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 650V H = BVDSS 700V AP04N70BP ±100 ± 30V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature AP04N70BP 0.8 0.9 1.1 1.2 -50 100 150 T j , Junction Temperature ( oC) Normalized BVDSS (V) 0.5 1.5 2.5 -50 100 150 T j , Junction Temperature ( oC ) Normalized RDS(ON) V G=10V I D=2A 0.5 1.5 2.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=25 o C V G=10V V G=6.0V V G=5.0V V G=4.5V V G=4.0V 0.5 1.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=150 o C V G=4.0V V G=3.5V V G=4.5V V G=5.0V V G=6.0V V G=10V

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP04N70BP 100 150 T c , Case Temperature ( oC ) PD (W) 0.5 1.5 2.5 3.5 4.5 100 125 150 T c , Case Temperature ( oC ) ID , Drain Current (A) 0.01 0.1 100 100 1000 10000 V DS (V) ID (A) T c=25 oC Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP04N70BP -50 100 150 T j , Junction Temperature ( oC ) VGS(th) (V) 0.1 100 0.2 0.4 0.6 0.8 1.2 1.4 1.6 V SD (V) IS (A) T j = 25 o C T j =150 o C 100 10000 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D=4A V DS=320V V DS=400V V DS=480V

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS ID IG 1~ 3 mA