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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristics RDS(ON) 12Ω ▼ Simple Drive Requirement ID 1A ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4.3 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice Halogen-Free Product -55 to 150 Parameter 0.5 Parameter AP01L60H/J-HF 0.5 Rating 600 +30 0.8 Linear Derating Factor 0.232 201010134 Storage Temperature Range -55 to 150 Maximum Thermal Resistance, Junction-ambient (PCB mount)4 The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 600 - - V ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance3 VGS=10V, ID=0.5A - - 12 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=0.5A - 0.8 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=+30V, VDS=0V - - + 100 nA Qg Total Gate Charge3 ID=1A - 4.0 - nC Qgs Gate-Source Charge V DS=480V - 1.0 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 1.1 - nC td(on) Turn-on Delay Time3 VDD=300V - 6.6 - ns tr Rise Time I D=1A - 5.0 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 11.7 - ns tf Fall Time R D=300Ω - 9.2 - ns Ciss Input Capacitance V GS=0V - 170 - pF Coss Output Capacitance V DS=25V - 30.7 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 1 A ISM Pulsed Source Current ( Body Diode )1 --5 A VSD Forward On Voltage3 Tj=25℃, IS=1A, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting T j=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Surface mounted on 1 in2 copper pad of FR4 board AP01L60H/J-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =0.5A V G =10V 0.0 0.5 1.0 1.5 0 1 22 43 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 6.0V 5.5V 5.0V V G =4.5V 0.0 0.3 0.5 0.8 1.0 01 0 2 0 3 0 4 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 5.0V 4.5V V G =4.0V 0.01 0.1 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 1.5 3 4.5 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =1A V DS =480V 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 10V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% 0.01 0.1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC