AP01L60AT A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 600V ▼ Fast Switching Characteristics RDS(ON) 12Ω ▼ Simple Drive Requirement ID 160mA

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current, VGS @ 10V mA ID@TA=100℃ Continuous Drain Current, VGS @ 10V mA IDM Pulsed Drain Current1 mA PD@TA=25℃ Total Power Dissipation W TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient Max. 150 ℃/W Data & specifications subject to change without notice 600 Parameter 200315072-1/4 Storage Temperature Range -55 to 150 RoHS-compliant Product -55 to 150 300 0.83 100 160 Parameter Rating AP01L60AT ± 30 G D S TO-92G DS Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is universally used for all commercial-industrial applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=1mA 600 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A - - 12 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance V DS=10V, ID=0.5A - 0.8 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=0.1A - 6.0 10 nC Qgs Gate-Source Charge V DS=480V - 1.0 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 2.5 - nC td(on) Turn-on Delay Time2 VDD=300V - 6.6 - ns tr Rise Time I D=1A - 5.0 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 11.7 - ns tf Fall Time R D=300Ω - 9.2 - ns Ciss Input Capacitance V GS=0V - 170 270 pF Coss Output Capacitance V DS=25V - 30.7 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 160 mA VSD Forward On Voltage2 IS=160mA, VGS=0V - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT AP01L60AT ± 30V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP01L60AT 0.4 0.8 1.2 1.6 2.4 2.8 -50 0 50 100 150 T j , Junction Temperature ( o C ) Normalized RDS(ON) I D =0.5A V GS =10V 0.5 1.5 01 2 2 4 3 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 6.0V 5.5V 5.0V V GS =4.5V 0.25 0.5 0.75 0 1 02 03 04 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 5.0V 4.5V V GS =4.0V 0.01 0.1 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS (A) T j = 150 o C T j = 25 o C -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V) 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation Case Temperature Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP01L60AT 02468 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =0.1A V DS =480V 100 1000 1 1 01 92 8 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.2 0.4 0.6 0.8 0 50 100 150 T A , Case Temperature ( o C ) PD (W) 0.05 0.1 0.15 0.2 25 50 75 100 125 150 T A , Case Temperature ( o C ) ID , Drain Current (A)