ANO11ON

ANO11ON TELEDYNE | Alldatasheet

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TELEDYNE COMPONENTS 28E D mm 8917602 OOOb3b5 7 i EEE "“TNEMA\\Z ANOTION, ANOI2Z0N SEMICONDUCTOR _ ANOI3ON, ANOI4ON | oe eee N-CHANNEL ENHANCEMENT MODE D-MOS FETs TSF?”

ORDERING INFORMATION

76 Pin Plastic DIF "ANOTIONA | ANOIZ0NA | ANOTSONA | ANO140NA

Description (each channel TOV, 1002 | 200V,002 | 300V,3002. FEATURES APPLICATIONS Ultra-Low Channel OFF Leakage, <800pA Electrostatic Array Drivers @ High Channel-to-Channel Isolation @ Electroluminescent Panel Drivers 100V to 400V Capability @ Converters WH Industry Standard Pin-Out 1 Multi-Channel Array Drivers ABSOLUTE MAXIMUM RATINGS (T, = +25°C per channel unless otherwise specified) Drain-Source Voltage Continuous Drain Current, Total Package , ANOWION s.ssssereossssseeressssssecesss ss EIGQY Tas 425°C Tos +28°C terriers ne ANO110N 80mA 140mA ANOIQ0N.sscccccscccsseecsseseeeeeeeeer eee #300V ANO{20N.ANOIZ0N -50mA 80mA ANOVON, .scccccccececceseseeeeeeeecee ees $400V ANOLON. oma 73mA bathe eae (as =0) 4 t00v Continuous Drain Current, Single Channel ANOI20N....cccscccecessececcceceeseceses #200 Ta= 425°C To= +25°C ANOIQON. ses cseceeeee rece eeeeeeee recess $300 NOTION ‘SOMA 100mA ANOUON. occ eee cs cece eeeeaeeee eee n neces $AOOV ANO120N,ANO130N 30mA soma ‘Channel-to-Channe! Isolation Voltage ANOIA0N 25mA soma Drain-to-Drain Voltage (Vas <0) Continuous Device Dissipation ANONION. ..cccesececeeresesceeeteeeeeeset100V Ta= 425°C = To= 425°C ANOIQ0N...cccccsssessceseeceseeerseeeeee #Q00V Single Channel ‘30W 1.0W ANOV4ON...c.ccccccccecssceccssceceneee eee #400V Linear Derating Factor Gate-Source Voltage ...ss.ssseveseeeseeeereees £80V Tas 426°C To = 428°C Operating and Storage Temperature . Total Package toe7mwicc —-33.2mWI°c FANGC ss csseeeesecesssessesessreses 76610 + 85°C Single Channel ‘smwi*C Jeomwi°c Lead Temperature (1/16" from mounting PIN CONFIGURATION & PACKAGE DIMENSIONS SCHEMATIC DIAGRAM 18-Pin Plastic DIP TOP VIEW (See Package 11) a ~. rfislor nic [2] {i7Jo2 oct Fs}os ou ce} [ie}os 65 | ref 113}06 a cH [z}or or YR fas os cat t Hilsts EEEEEEEEnE EEE! 3-36

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TELEDYNE COMPONENTS 26— D MM 4917602 0006370 3 TOIFRAZ ANOIION, ANOIZON SEMICONDUCTOR . ANOI30N, ANOI4ON ee ee tals hetechchatticietahs ELECTRICAL CHARACTERISTICS (1, = +25°C per channel unless otherwise noted) T- 73 as [+] characteristic [min [typ | max | unit [TEST CONDITIONS ml anoito | 100 | t60 [| | 2] BVpss_ Drain-Source [-ANoi20 |" 200 J 300 J} Vip = 100A, Vas =0 [3] Breakdown Voltage | ANO130_[ 300 [400 [ | 5] anoiio [| 50 | Vos =60V. [6] loss Drain-Source OFF [-ANO120 [5.0] nk Vas =0| (NOTE 1) [7] Leakage Current ANOi20 [6.0 | Vos = 100V) | 8} [ANoi4o [5.07 | °| Tass Gate-Body TA |Vas=20V, Vos =0 Leakage Current Vasithy Gate-Source V_[Vos=Vas, Ip = 1.0mA Threshold Voltage ANoiio [60 [100 | 12] fps(on) Drain-Source ANOi20 "| T2t0 [300] Ip=10mA, Vag =10V [43] ON Resistance ANo130_| [260 "300 | 14} | ANo140 [| 326360 | | Ipjon) ‘Drain-Source ANot20 [7257 [TT Vos = 25V, Ves = 10V ON Current ANOI30 [25 [18] ANOi40 | 25 [TT {20} Cts Common-Source ANOI20 [40 [| 'Vps = 25V, Ip = 10mA, f= 1KHz . [21] Forward Transcond | ANO130_| 4.0 | 22] SLO A cies Common-Source Input Capacitance | 2] Coss Common-Source Output Capacitance PF |Vps =25V, Vas =0, f=1MHz ‘Common-Source rss ——-~Reverse Transfer Capacitance | | tg(on) _ Turn-ON Delay Time [i Risetime Ts Vo =28V, Ve(on) = 10V | | tao Turn-OFF RL = 8200. Rg = 510 Delay Time [20] |e Fail Time a Note 1: Limit is OFF leakage of all 8 segments in parallal, SWITCHING TIMES TEST CIRCUIT Yoo TEST WAVEFORMS aL Vater —— 0% Your hd 1. 5 rut putse btu LS “e . HiLEE WIDTH oonsee wl fon f= eel ‘0 5 | ot our oser..oscore Yoo “Sap =x oe cz0F Vow sy —_10% fom oscittoscore = eee 3-37

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TELEDYNE COMPONENTS 2é6— D mm@ 4917602 O00b371 5S - THBAZ ANO‘410N, ANO120N ] SEMICONDUCTOR ANO4130N, ANO140N : _ Ci 3 2S TYPICAL PERFORMANCE CHARACTERISTICS (1, = +25°C, per channel, unless otherwise specified) DRAN-SOURCE OFF LEAKAGE DRAIN-SOURCE ON RESISTANCE AMBIENT TEMPERATURE GATE-SOURCE VOLTAGE co | ; i itt | Vag = 0. ~ tH gd whe) i : == 2 ———— 5 sm § Ee 3 i ~~ == — i es \\\\ a E \\ a > a a z > acl ttt tt | 0 | ee . 60 -25 0 +25 +60 +76 +100 +125 ° 6.0 10 16 20 Ta — AMBIENT TEMPERATURE — ee) Ves - GATE-SOURCE VOLTAGE — (VOLTS) FORWARD TRANSCONDUCTANCE ON DRAIN CURRENT z ON DRAIN CURRENT GATE-SOURCE VOLTAGE 20 . L_] 140 7

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H 6 Z oA & 100 — “OA esc [° a See ee eee ee =< 60 | PCY [ee ptr} +} ee “ULE LT ¢ o} Ae ee | fet tT Titty nD 40 # 0 5.0 10 16 20 0 20 40 60 60 10 12 14 Ip — DRAIN CURRENT — (mA) Vgg — GATE-SOURCE VOLTAGE — (VOLTS) on 3-38

4172 D-09

TELEDYNE COMPONENTS 246 D m@@ 8917602 o0Ob372 7 TOPAZ, APO120N, SEMICONDUCTOR ___APO130N, APO140N —— EEE P-CHANNEL ENHANCEMENT MODE D-MOS FETs | 8-CHANNEL ARRAYS

1 ORDERING INFORMATION

18 Pin Plastic DIP ‘APOI20NA | APOISONA | APO140NA

Deseription (each channel) -200V, 6000 -400v, 7002 | FEATURES APPLICATIONS

1 Ultra-Low Channel OFF Leakage, <-800pA 1 Electrostatic Array Drivers

1 High Channel-to-Channel Isolation 1 Electroluminescent Panel Drivers

j N-Channel Complements available 1 Converters Industry Standard Pin-Out MH Multi-Channel Array Drivers ABSOLUTE MAXIMUM RATINGS (1, = +25°C per channel, unless otherwise specified) Drain-Source Voltage Continuous Drain Current, Total Package APOIZON wiseeeeeseesesseeesaeeesseeesses “200V Ta=#25°C Te = +25°C APOISON ...ccccesccccssecerseeeneeees -GOOV APOI20N, APOISON — -25mA ~40mA APOIQON oo .ccecsseeecsseeessteersasensee ~A00V APOI40N -20mA -35mA . 2 Continuous Drain Current, Single Channel Drain-Gate Voltage (Vas = 0) ane 76°C APO120N, APOT30N, APOISON 2... eee c eee eeseeeeee eee eteeeees “B0OV APO140N 45mA 25mA APOIMON .cscecsecssessceseceerecseeesse =400V 216m) “5m were Continuous Device Dissipation Channel-to-Channel {solation Voltage T+25°C To= 425°C Drain-to-Drain Voltage (Vos = 0) Total Package 64w 2.0W APO120N ...ssseeeeeesesseeeseeseneeeses -200V Single Channel 30W 1.0W APOISON sic seeseeesee terete eeeeeeeenes “BOOV Linear Derating Factor APOION ..ecccceeccecerseeesetenseeees “400V Th=425°C Te = #25°C Gate-Source Voltage ...seeeeecesseeceeees EAOV Total Package 10.67mW/°C 33,2mW/°C Operating and Storage Temperature Single Channel SmW/°C — 16.6mW/2C RANG .eeeseceesssseesseeeeseeenes “6510 85°C Lead Temperature (1/16" from mounting PIN CONFIGURATION & PACKAGE DIMENSIONS SCHEMATIC DIAGRAM 18-Pin Plastic DIP TOP VIEW (See Package 11) aft ajo wo[z] [oz ott a) G3 cH {1504 oe cf os as| ce} {z]os tal or EY ETE fae GB coy | rp) sts TS UL UE 3-39 0-88-6

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TELEDYNE COMPONENTS 286 D m@® 8917b02 0006373 9 mm Lene ee EE TT - -, . TEFAZ 713-35 i eS AP04120N, APO130N, APO140N | Henn er eee eee a el | ELECTRICAL CHARACTERISTICS (T, = +25°C per channel unless otherwise noted) = CHARACTERISTIC [MIN [TYP[MAX] UNIT TEST CONDITIONS {1 | BVoss Drain-Source JAPoroN |-200] |_| [2 | Breakdown Voltage lAporson |-300] [| | Vv Ip==100uA, Vas = 0 [3 | jAporaon [-4oo[ [| Toss Drain-Source OFF Vos = -100V, Vas =0 Leakage Current (NOTE 1 [se] 2 [les Gate-Body |__| [a10[ na | Vow =20¥, Vop=0 {6 | & Leakage Current [ [| _[#to[ WA | Vo = +40V, Vos = 0 7 Vesirs Gate-Source V_| Vos = Ves, lo =-0.5mA Threshold Voltage [3 | Toston Drain-Source [APOIZ0N,APOI30N | | | 600 | To = -10mA, Ves = -10V. [_9 | ON Resistance [APO140N. [_{ | 700| Toca Drain-Source mA | Vos = -25V.Nes = -10V ON Current

1 Oe ‘Common-Source Vos = -25V, lo = -6mA

Forward Transconductance f=1KHz Cu ‘Common-Source Input Capacitance Coss ‘Common-Source Output Capacitance Vos = -25V, Vas = 0, f = 1MHz ‘Common-Source Reverse Transfer Capacitance Yeon Turn-ON Delay Time [16 | [x Risetime To Voo = ~25V, Veron = 10V 7 tan Tumn-OFF A, = 5000 Re = 510 Delay Time Lis | [ke Faitime CE TT Note 1: Limit is OFF leakage of all 8 segments in parallel. i LEE E EEE EEEaSEE 3-40

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TELEDYNE COMPONENTS 26€ D MM 8917502 GOUb374 0 me a 7-8-2585 TOFAZ SEMEONS DD APO120N, APO130N, AP0140N ——— TYPICAL PERFORMANCE CHARACTERISTICS (T, = +25°C, per channel, unless otherwise specified) DRAIN-SOURCE OFF LEAKAGE DRAIN-SOURCE ON RESISTANCE AMBIENT TEMPERATURE GATE-SOURCE VOLTAGE 4 i 00 =. (Co anera Pi oN | g EPC _ tt} GL ET oot | TT | 7 50-25 0 425 +50 75 100 +125 B °%o 5 =10 16 720 Tq ~ AMBIENT TEMPERATURE "e) Vgs~ GATE. SOURCE VOLTAGE VOLTS! | | FORWARD TRANSCONDUCTANCE ON DRAIN CURRENT ON DRAIN CURRENT GATE-SOURGE VOLTAGE i 3 “ t “CTT TTT TT a poe creer Ooops Coe pec i || | Pee rT g-1 11 YET Ty | Cer PM COoEA e, Wo Fat | ZT TT 7 4 PLETAL : LLL TT LLY TTT * oO 6 10 15 -20 0 -2 +4 -6 -8 -10 -12 -14 -16 - Ip -DRAINCURRENT( MAI Vostony GATE SOURCE VOLTAGE WOLTa at

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