AMM-7200UC | DigiCamel IC Datasheet

Online Datasheet

Read AMM-7200UC online.

AMM-7200 MARKIMICROWAVE | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 16

Technical content

12 GHz – 46 GHz GaAs Driver Amplifier AMM-7200

1.1 General Description

The AMM-7200 is a general-purpose broadband MMIC driver amplifier that provides +21 dBm output power suitable for driving a Marki H or L diode mixer at 12-46 GHz and S diode mixer from 14-40 GHz. The amplifier also has excellent return losses and a small die size which allows it to be used in a variety of applications. It has built in DC-blocking capacitors on the input and output.

1.2 Features

▪ +21 dBm Output Power ▪ 18 dB gain ▪ Excellent Return Losses ▪ Small Die size ▪ .s2p S-Parameters: AMM-7200CH

1.3 Applications

▪ Mobile test and measurement equipment ▪ Radar and satellite communications ▪ 5G Transceivers ▪ Driver amplifier L,H,S – diode mixers

1.4 Functional Block Diagram

1.5 Part Ordering Options1

Number Description Package Green Status Product Lifecycle Export Classification AMM-7200CH Wire Bondable Die Bare Die RoHS Pre-Release 3A001.b.2.d AMM-7200UC Connectorized Module UC RoHS Pre-Release EAR99 1 Refer to our website for a list of definitions for terminology presented in this table. +Vd RF in RF out - Vg UC Module Bare Die

www.markimicrowave.com AMM-7200 Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 2 | R e v . P R E Table of Contents 2. AMM-7200 Port Configurations and 3.3 Recommended Operating Conditions . 7

3.4 AMM-7200CH and AMM-7200UC

3.6 AMM-7200CH Typical Performance

3.7 AMM-7200UC Typical Performance

3.8 Typical Marki Mixer Performance Plots

4.1 AMM-7200CH Application Circuit .. 13

5.2 AMM-7200UC Package Outline

Revision History

Revision Code Revision Date Comment PRE Feburary 2021 Pre-Release

2.1 AMM-7200CH Port Diagram

A port diagram of the AMM-7200CH is shown below. Vd 1 Vd 2 Vd 3 Vg RF In RF Out

2.2 AMM-7200CH Port Functions

Port Function Description Equivalent Circuit for Package RF In RF Input This is the RF Input port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF input pad is GSG with 175 µm pitch. RF Out RF Output This is the RF Output port of the amplifier die. It is internally DC blocked and RF matched to 50 Ω. RF output pad is GSG with 1 75 µm pitch. Vd 1 Drain Supply Port 1 Pad Vd 1 supplies drain voltage to the first stage of the 3-stage amplifier IC. Apply gate voltage Vg before applying drain voltage. Vd 2 Drain Supply Port 2 Pad Vd 2 supplies drain voltage to the second stage of the 3-stage amplifier IC. Apply gate voltage Vg before applying drain voltage. Vd 3 Drain Supply Port 3 Pad Vd 3 supplies drain voltage to the third stage of the 3-stage amplifier IC. Apply gate voltage Vg before applying drain voltage. Vg Gate Bias Voltage Pad The Vg pad is connected resistively on chip. The user should apply between -0.4V and -0.6V to Vg pad before applying positive DC voltage to any Vd port. Lower (more negative) voltages on a Vg pad will result in lower drain current and lower small signal gain. GND Ground Bottom side must be connected to a DC/RF ground potential with high thermal and electrical conductivity. RF In RF Out Vd1 Vd2 Vd3 Vg GND

2.3 AMM-7200UC Port Diagram

A port diagram of the AMM-7200UC is shown below.

2.4 AMM-7200UC Port Functions

Port Function Description Equivalent Circuit for Package RF In RF Input This is the RF Input port of the amplifier module. It is internally DC blocked and RF matched to 50 Ω. RF Out RF Output This is the RF Output port of the amplifier module. It is internally DC blocked and RF matched to 50 Ω. Vd Drain Supply Pin The Vd pin supplies drain voltage to the amplifier IC. Apply gate voltage Vg before applying drain voltage. Vg Gate Bias Pin The Vg pin supplies negative control voltage to the amplifier and controls the amplifier gain. Lower (more negative) voltages on a Vg pad will result in lower drain current and lower small signal gain. GND Ground Exterior housing must be connected to a DC/RF ground potential with high thermal and electrical conductivity. GND Vd RF In RF Out Vg GND AMM7210UC D/C Input Output microwave AMM7200UC RF In RF Out Vd Vg GND

3.1 Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may become inoperable or have a reduced lifetime. Parameter Maximum Rating Units Positive Drain Supply Voltage (Vd) 4.5 V Negative Bias Voltage (Vg) -2 V RF Input Power +15 dBm Output Load VSWR 7:1 - Operating Temperature -40 to +85 ˚C Storage Temperature -65 to +150 ˚C Max Junction Temperature for MTTF > 1E6 hours 175 ˚C

3.2 Package Information

Weight AMM-7200UC 12.4

3.3 Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Recommended Operating Conditions2 Min Nominal Max Units TA, Ambient Temperature -40 +25 +85 °C Power Supply DC Voltage (Vd) +2 +3 +4 V Power Supply DC Current (Id) (No RF Input)2, 3 100 180 300 mA Negative Bias Voltage (Vg) -0.7 -0.5 -0.2 V Input Power for Saturation +6 +9 +12 dBm

3.4 AMM-7200CH and AMM-7200UC Sequencing Requirements

Turn-on Procedure: 1) Apply negative bias to Vg 2) Apply Vd Turn-off Procedure: 1) Turn off Vd 2) Turn off Vg

2 Power Supply DC current should be modified by changing bias voltage Vg to maintain junction

temperature within MTTF target for given operating conditions. 3 Recommended operating current conditions without RF input applied.

3.5 Electrical Specifications

The electrical specifications apply at TA=+25°C in a 50Ω system. Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per lot basis Parameter Test Conditions Frequency Min Typical Units Saturated Output Power4 3V/-0.5V bias

12 GHz – 18 GHz +19

dBm 18 GHz – 35 GHz +17 +21.5 35 GHz – 46 GHz +19.5 Small Signal Gain 3V/-0.5V bias

12 GHz – 18 GHz 17

18 GHz – 35 GHz 14 18

35 GHz – 46 GHz 15

3V/-0.5V Bias 12 GHz – 46 GHz Output Return Loss 18 Reverse Isolation 52 Noise Figure 3V/-0.5V bias 12 GHz – 46 GHz 6.3 Bias Requirements5 3V/-0.4V - 230 mA 3V/-0.5V - 180 3V/-0.6V - 130 Input IP3 (IIP3) 3V/-0.5V, -20 dBm Input Power

12 GHz – 46 GHz +12

dBm Output IP3 (OIP3) 12 GHz – 46 GHz +29 Output P1dB 3V/-0.5V bias 12 GHz – 46 GHz +19 Input Power for Saturation 3V/-0.5V bias 12 GHz – 46 GHz +9 dBm

4 Saturated Output Power specification defined using the AMM-7200UC P5dB compression curve

shown in section 3.7. 5 Bias conditions tested with no RF input power. Bias conditions presented as Vd/Vg.

3.6 AMM-7200CH Typical Performance Plots

10 15 20 25 30 35 40 45 50 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias 10 15 20 25 30 35 40 45 50 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vd = 3.5V 3.5V / -0.4V Bias 3.5V / -0.5V Bias 3.5V / -0.6V Bias 10 15 20 25 30 35 40 45 50 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vd = 4V 4V / -0.4V Bias 4V / -0.5V Bias 4V / -0.6V Bias -90 -80 -70 -60 -50 -40 -30 -20 -10 10 15 20 25 30 35 40 45 50 Frequency (GHz) Reverse Isolation (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias -30 -25 -20 -15 -10 10 15 20 25 30 35 40 45 50 Frequency (GHz) Input Return Loss (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias -30 -25 -20 -15 -10 10 15 20 25 30 35 40 45 50 Frequency (GHz) Output Return Loss (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias

3.7 AMM-7200UC Typical Performance Plots

10 15 20 25 30 35 40 45 50 Frequency (GHz) Output Compression Curves (dBm) vs. Frequency, 3V / -0.5V Bias OP5dB OP3dB OP1dB 10 15 20 25 30 35 40 45 50 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias 10 15 20 25 30 35 40 45 50 Frequency (GHz) Output Compression Curves (dBm) vs. Frequency, 3.5V / -0.5V Bias OP5dB OP3dB OP1dB 10 15 20 25 30 35 40 45 50 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Vd = 3.5V 3.5V / -0.4V Bias 3.5V / -0.5V Bias 3.5V / -0.6V Bias -35 -30 -25 -20 -15 -10 10 15 20 25 30 35 40 45 50 Frequency (GHz) Input Return Loss (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias -35 -30 -25 -20 -15 -10 10 15 20 25 30 35 40 45 50 Frequency (GHz) Output Return Loss (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias -70 -60 -50 -40 -30 -20 -10 10 15 20 25 30 35 40 45 50 Frequency (GHz) Reverse Isolation (dB) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias 10 15 20 25 30 35 40 45 50 Frequency (GHz) Noise Figure (dB) vs. Frequency 3V / -0.5V Bias 3.5V / -0.5V Bias

www.markimicrowave.com AMM-7200 Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 11 | R e v . P R E Space Intentionally Left Blank 10 15 20 25 30 35 40 45 50 Frequency (GHz) OIP3 (dBm) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias 10 15 20 25 30 35 40 45 50 Frequency (GHz) IIP3 (dBm) vs. Frequency, Vd = 3V 3V / -0.4V Bias 3V / -0.5V Bias 3V / -0.6V Bias 10 15 20 25 30 35 40 45 50 Frequency (GHz) Output Power (dBm) vs. Frequency, Over Temp., 3V / -0.5V Bias -40 C 0 C

25 C 55 C

10 15 20 25 30 35 40 45 50 Frequency (GHz) Small Signal Gain (dB) vs. Frequency, Over Temp., 3V / -0.5V Bias -40 C 0 C 1.5 2 2.5 3 3.5 4 4.5 Vd (V) Quiescent Drain Current (mA) vs. Vd Vg = -0.4V Vg = -0.5V Vg = -0.6V 100 120 140 160 180 200 220 240 260 Vg (V) Quiescent Drain Current (mA) vs. Vg Vd = 3.5V Vd = 3V Vd = 2.5V 100 150 200 250 300 350 400 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input Power (dBm) Drain current (mA) vs. RF Input Power, 3V / -0.5V Bias

15 GHz 20 GHz

25 GHz 30 GHz

35 GHz 40 GHz

3.8 Typical Marki Mixer Performance Plots with AMM-7200UC LO Driver6

6 LO Input Powers specified as the input power into the AMM-7200UC LO driver

-20 -18 -16 -14 -12 -10 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 RF Frequency (GHz) MM1-1140H Config. A Conv. Loss (dB) vs. Frequency, 91 MHz IF, AMM-7200UC LO Driver, 3V / -0.5V Bias +6 dBm LO Input +3 dBm LO Input 0 dBm LO Input -3 dBm LO Input -20 -18 -16 -14 -12 -10 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 RF Frequency (GHz) MM1-1240S Config. A Conv. Loss (dB) vs. Frequency, 91 MHz IF, AMM-7200UC LO Driver, 3V / -0.5V Bias +9 dBM LO Input +6 dBm LO Input +3 dBm LO Input 0 dBm LO Input 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 RF Frequency (GHz) MM1-1140H Config. A IIP3 (dBm) vs. Frequency, 91 MHz IF, AMM-7199UC LO Driver, 3V / -0.5V Bias +6 dBm LO Input +3 dBm LO Input 0 dBm LO Input -3 dBm LO Input 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 RF Frequency (GHz) MM1-1240S Config. A IIP3 (dBm) vs. Frequency, 91 MHz IF, AMM-7199UC LO Driver, 3V / -0.5V Bias +9 dBm LO Input +6 dBm LO Input +3 dBm LO Input 0 dBm LO Input

4.1 AMM-7200CH Application Circuit

Below are the recommended application circuits for the AMM-7200CH. Vd1 Vd2 Vd3 Vg RF In RF OutRF In A 50Ω trace 50Ω RF Out 50Ω trace 50Ω Vg Vd A B

www.markimicrowave.com AMM-7200 Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 14 | R e v . P R E One can also choose to break out Vd1, Vd2, and Vd3 to separate power supply lines to increase gain control and further strengthen amplifier stability. Designator Description Sample Part Number A Presidio 0.1 µF + 1800 pF Capacitor MVB4080X104ZGH5R3 B PPI 10Ω Wire-bondable series resistor PRT135-14x12x10A10R00FQE

4.2 Preventing Oscillation

Millimeter wave amplifiers are sensitive to low frequency oscillations caused by a DC/RF ground path with excessive inductance. Ensure the chip is grounded with low inductance along the DC path to voltage supply ground. The bypass arrangement is also critical to reducing the possibility of oscillation, and the series resistor B (shown above) with value 10 – 100 Ω is necessary to help strengthen the amplifier stability. Vd1 Vd2 Vd3 Vg RF In RF OutRF In A 50Ω trace 50Ω RF Out 50Ω trace 50Ω Vg Vd2 A B AA Vd1 Vd3

www.markimicrowave.com AMM-7200 Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 15 | R e v . P R E 4.3 Constant Drain Current vs. Constant Gate Voltage Operation The AMM-7200 pHEMT amplifier can be biased with a constant gate and drain voltage, or with a constant drain current by regulating the gate voltage. Using a constant gate and drain voltage reduces circuit complexity, but has variable current consumption during operation. However, regulating the gate voltage using feedback circuitry which controls the drain current to a constant value minimizes unit-to-unit variation in gain, output power, and compression points. Under small signal excitation at a fixed temperature, these two appro aches are equivalent because the current draw versus frequency is relatively constant in small signal . However, they will diverge in large signal conditions, where the drain current is affected the input signal’s frequency and power. The output power in saturation is relatively unchanged, as it is more strongly dependent on the drain voltage. However, output referred 1 dB compression point will decrease by 2 -3 dB when operated with a constant drain current. 5. Mechanical Data

5.1 AMM-7200CH Outline Drawing

Notes: 1) RF GSG probe pitch is 175 µm. 2) CH substrate is 0.002 inches thick GaAs. 3) I/O trace finish is 4 µm Au. Ground finish is 5 µm Au. 4) Die are not passivated INCH [MM] PROJECTION RF (IN) RF (OUT) Min Clearance Signal Pad, 2PL Ground Pad Vias, 4PL Vd Pad, 3PL Vg Pad,1PL .0010 [.025] Spacing, 4 PL .0541 [1.374] .0131 [.332] .0249 [.632] .0367 [.932] .0039 [.098] .0219 [.557] .0458 [1.163] .0039 [.099].0112 [.286] .0039 [.098] .0150 [.382].0219 [.557] .0050 [.127] .0020 [.051]

www.markimicrowave.com AMM-7200 Copyright © 2021 Marki Microwave, Inc. All Rights Reserved. P a g e 16 | R e v . P R E Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any product

5.2 AMM-7200UC Package Outline Drawing

Note: UC-Package Connectors are not removeable Connector Type 2.4 mm Female 2.4 mm Male Ø.067 Thru, 4 PL [1.70] microwave PROJECTION INCH [MM] 0.22 [5.46] 0.04 [1.07] 0.44 [11.07] 0.19 [4.93] 0.39 [9.88] 1.46 [37.01] 0.19 [4.94] 0.56 [14.22] 0.28 [7.11] 0.17 [4.32] 0.52 [13.21] 0.51 [12.88] 0.43 [10.92] typ. 0.14 [3.43] *Notes: 1. All measurements are typical. 2. Ground lug and bias pins are solderable.

Product Information

AMM-7200UC specifications and overview.

Summary

12 GHz ??46 GHz GaAs Driver Amplifier

Description

12 GHz ??46 GHz GaAs Driver Amplifier

Source title AMM-7200UC Datasheet(PDF) - Marki Microwave

Related Parts

More parts from the same family.

Browse manufacturer