AMIS-42665

AMIS-42665 AMI | Alldatasheet

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Technical content

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

1.0 General Description

The AMIS-42665 CAN transceiver is the interface between a controller area network (CAN) protocol controller and the physical bus and may be used in both 12V and 24V systems. The transceiver provides differential transmit capability to the bus and differential receive capability to the CAN controller. The AMIS-42665 is a new addition to the CAN high-speed transceiver family and offers the following additional features:

• Ideal passive behaviour when supply voltage is removed
• Wake-up over bus
• Extremely low current standby mode Due to the wide commo n-mode vo ltage rang e of the r eceiver inp uts, the AMIS-42 665 is abl e to reach outstand ing leve ls of electromagnetic susceptibility (EMS). Similarly, extremely low electromagnetic emission (EME) is achieved by the excellent matching of the output signals.

2.0 Key Features

• Compatible with the ISO 11898 standard (ISO 11898-2, ISO 11898-5 and SAE J2284)
• High speed (up to 1Mbaud)
• Ideally suited for 12V and 24V industrial and automotive applications
• Extremely low current standby mode with wake-up via the bus
• Low EME common-mode choke is no longer required
• Differential receiver with wide common-mode range (+/- 35V) for high EMS
• Voltage source via VSPLIT pin for stabilizing the recessive bus level (further EMC improvement)
• No disturbance of the bus lines with an un-powered node
• Transmit data (TxD) dominant time-out function
• Thermal protection
• Bus pins protected against transients in an automotive environment
• Power down mode in which the transmitter is disabled
• Bus and VSPLIT pins short circuit proof to supply voltage and ground
• Logic level inputs compatible with 3.3V devices
• At least 110 nodes can be connected to the same bus.

3.0 Ordering Information

Marketing Name Package Temp. Range AMIS42665AGA SOIC 150 8 GREEN (JEDEC MS-012) -40°C… 125°C AMIS42665ALA SOIC 150 8 GREEN (NiPdAu, JEDEC MS-012) -40°C… 125°C 1 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

4.0 Technical Characteristics

Table 1: Technical Characteristics Symbol Parameter Conditions Min. Max. Unit VCC Power supply voltage 4.75 5.25 V VSTB DC voltage at pin STB -0.3 VCC V VTxD DC voltage at pin TxD -0.3 VCC V VRxD DC voltage at pin RxD -0.3 VCC V VCANH DC voltage at pin CANH 0 < VCC < 5.25V; no time limit -35 +35 V VCANL DC voltage at pin CANL 0 < VCC < 5.25V; no time limit -35 +35 V VSPLIT DC voltage at pin VSPLIT 0 < VCC < 5.25V; no time limit -35 +35 V VO(dif)(bus_dom) Differential bus output voltage in dominant state 42.5Ω < RLT < 60Ω 1.5 3 V CM-range Input common-mode range for comparator Guaranteed differential receiver threshold and leakage current -35 +35 V VCM-peak Common-mode peak See Figure 8 and 9 (Note) -500 500 mV Cload Load capacitance on IC outputs 15 pF tpd(rec-dom) Propagation delay TxD to RxD See Figure 5 70 230 ns Symbol Parameter Conditions Min. Max. Unit t pd(dom-rec) Propagation delay TxD to RxD See Figure 5 100 245 ns VCM-step Common-mode step See Figure 8 and 9 (Note) -150 150 mV Tjunc Junction temperature -40 150 °C Note: The parameters VCM-peak and VCM-step guarantee low EME.

5.0 Block Diagram

Figure 1: Block Diagram VSPLIT Mode & wake-up control Wake-up Filter AMIS-42665 STB GND RxD VCC COMP COMP Timer VCCTxD Driver control Thermal shutdown VCC VSPLIT VCC PC20050211.1 POR CANH CANL 2 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

6.0 Typical Application

RLT = 60 Ω PC20040829.3 RLT = 60 Ω CLT = 47 nF

6.1 Application Schematic

Figure 2: Application Diagram

6.2 Pin Description

PC20040829.1 Figure 3: Pin Configuration Table 2: Pinout Pin Name Description

1 TxD Transmit data input; low input => dominant driver; internal pull-up current

2 GND Ground

3 VCC Supply voltage

4 RxD Receive data output; dominant transmitter => low output

5 VSPLIT Common-mode stabilization output

6 CANL Low-level CAN bus line (low in dominant mode)

7 CANH High-level CAN bus line (high in dominant mode)

8 STB Standby mode control input

3 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

7.0 Functional Description

7.1 Operating Modes

AMIS-42665 provides two modes of operation as illustrated in Table 3. These modes are selectable through pin STB. Table 3: Operating Modes Pin RXD Mode Pin STB Low High Normal Low Bus dominant Bus recessive Standby High Wake-up request detected No wake-up request detected 7.1.1. Normal Mode In the norm al mode, the tra nsceiver is able to communic ate via the b us lines. The signals are tra nsmitted and r eceived to the C AN controller via the pins TxD and RxD. The slopes on the bus lines outputs are optimized to give extremely low EME. 7.1.2. Standby Mode In standby mode both the tra nsmitter and r eceiver are dis abled and a ver y low-power differential receiver monitors the bus lin es for CAN bus activity. The bus lines are terminated to ground and supply current is reduced to a minimum, typically 10µA. When a wake-up request is detected by the low-power differential receiver, the signal is first filtered and then verified as a valid wake signal after a time period of tBUS, the RxD pin is driven low by the transceiver to inform the controller of the wake-up request.

7.2 Split Circuit

The VSPLIT pin is operational only in normal mode. In standby mode this pin is floating. The VSPLIT is connected as shown in Figure 2 and its purpose is to provide a stabilized DC voltage of 0.5 x VCC to the bus avoiding possible steps in the common-mode signal therefore reducing EME. These unwanted steps could be caused by an un-powered node on the network with excessive leakage current from the bus that shifts the recessive voltage from its nominal 0.5 x VCC voltage.

7.3 Wake-up

Once a valid wake-up (dominant state longer than tBUS) has been received during the standby mode the RxD pin is driven low.

7.4 Over-temperature Detection

A thermal protection circuit protects the IC from dama ge by switching off the transmitter i f the junction t emperature exceeds a value of approximately 160°C. Beca use the tra nsmitter di ssipates most of the power, the p ower d issipation an d temp erature of th e I C is reduced. All ot her IC function s continue to operate. The transmitter off-state resets when pin T xD goes high. T he thermal pr otection circuit is particularly needed when a bus line short circuits.

7.5 TxD Dominant Time-out Function

A T xD dom inant time- out ti mer circu it pre vents the bus lin es being driven t o a per manent dom inant state ( blocking all n etwork communication) if pin T xD is forced perm anently lo w by a hard ware and/or soft ware a pplication fail ure. The timer is triggere d b y a negative edge on pin TxD. If the dur ation of the lo w-level on pin TxD exceeds the internal timer value tdom, the transmitter is disabled, driving the bus into a recessive state. The timer is reset by a positive edge on pin TxD. This TxD dominant time-out time (tdom)defines the minimum possible bit rate to 40kBaud.

7.6 Fail Safe Features

A current-l imiting circ uit pr otects the tr ansmitter outp ut stage from damage c aused by a ccidental short circu it to either pos itive o r negative supply voltage, although power dissipation increases during this fault condition. 4 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet The pins CAN H and CANL are protected from automotive electrical transients (according to ISO 76 37; see F igure 4). Pins T xD and STB are pu lled high internally should the input become disconnected. Pins TxD, STB and RxD will be floating, preventing reverse supply should the VCC supply be removed.

8.0 Electrical Characteristics

8.1 Definitions

All voltages are referenced to GND (p in 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin; sourcing current means the current is flowing out of the pin.

8.2 Absolute Maximum Ratings

Stresses ab ove those listed in the fo llowing tabl e ma y c ause permanent devic e fail ure. Exposur e to abso lute m aximum ratin gs for extended periods may effect device reliability. Table 4: Absolute Maximum Ratings Symbol Parameter Conditions Min. Max. Unit VCC Supply voltage -0.3 +7 V VCANH DC voltage at pin CANH 0 < VCC < 5.25V; no time limit -50 +50 V VCANL DC voltage at pin CANL 0 < VCC < 5.25V; no time limit -50 +50 V VSPLIT DC voltage at pin VSPLIT 0 < VCC < 5.25V; no time limit -50 +50 V VTxD DC voltage at pin TxD -0.3 VCC + 0.3 V VRxD DC voltage at pin RxD -0.3 VCC + 0.3 V VSTB DC voltage at pin STB -0.3 VCC + 0.3 V Vtran(CANH) Transient voltage at pin CANH Note 1 -300 +300 V Vtran(CANL) Transient voltage at pin CANL Note 1 -300 +300 V Vtran(VSPLIT) Transient voltage at pin VSPLIT Note 1 -300 +300 V Vesd(CANL/CANH/ VSPLIT) Electrostatic discharge voltage at CANH and CANL pin Note 2 Note 4 -500 +500 kV V Vesd Electrostatic discharge voltage at all other pins Note 2 Note 4 -500 +500 kV V Latch-up Static latch-up at all pins Note 3 120 mA Tstg Storage temperature -55 +150 °C Tamb Ambient temperature -40 +125 °C Tjunc Maximum junction temperature -40 +170 °C Notes: 1) Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4). 2) Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7. 3) Static latch-up immunity: Static latch-up protection level when tested according to EIA/JESD78. 4) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.

8.3 Thermal Characteristics

Table 5: Thermal Characteristics Symbol Parameter Conditions Value Unit Rth(vj-a) Thermal resistance from junction to ambient in SO8 package In free air 145 K/W Rth(vj-s) Thermal resistance from junction to substrate of bare die In free air 45 K/W 5 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

8.4 Characteristics

VCC = 4.75 to 5.25V; Tjunc = -40 to +150°C; RLT =60Ω unless specified otherwise. Table 6: Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit Supply (pin VCC) ICC Supply current Dominant; VTxD = 0V Recessive; VTxD = VCC mA mA ICCS Supply current in standby mode Tjunc,max = 100°C 10 15 µA Transmitter Data Input (pin TxD) VIH High-level input voltage Output recessive 2.0 - VCC + 0.3 V VIL Low-level input voltage Output dominant -0.3 - +0.8 V IIH High-level input current VTxD =VCC -5 0 +5 µA IIL Low-level input current VTxD = 0V -75 -200 -350 µA Ci Input capacitance Not tested - 5 10 pF Transmitter Mode Select (pin STB) VIH High-level input voltage Standby mode 2.0 - VCC + 0.3 V VIL Low-level input voltage Normal mode -0.3 - +0.8 V IIH High-level input current VSTB =VCC -5 0 +5 µA IIL Low-level input current VSTB = 0V -1 -4 -10 µA Ci Input capacitance Not tested - 5 10 pF Receiver Data Output (pin RxD) VOH High-level output voltage IRXD = -10mA 0.6 x VCC 0.75 x VCC V VOL Low-level output voltage IRXD = 5mA 0.25 0.45 V Ioh High-level output current Vo = 0.7 x VCC -5 -10 -15 mA Iol Low-level output current Vo = 0.3 x VCC 5 10 15 mA Bus Lines (pins CANH and CANL) Vo(reces) (norm) Recessive bus voltage VTxD = VCC; no load normal mode 2.0 2.5 3.0 V Vo(reces) (stby) Recessive bus voltage VTxD = VCC; no load standby mode -100 0 100 mV Io(reces) (CANH) Recessive output current at pin CANH -35V <VCANH< +35V; 0V <VCC < 5.25V -2.5 - +2.5 mA Io(reces) (CANL) Recessive output current at pin CANL -35V <VCANL < +35V; 0V <VCC < 5.25V -2.5 - +2.5 mA Vo(dom) (CANH) Dominant output voltage at pin CANH VTxD = 0V 3.0 3.6 4.25 V Vo(dom) (CANL) Dominant output voltage at pin CANL VTxD = 0V 0. 5 1.4 1.75 V Vo(dif) (bus_dom) Differential bus output voltage (VCANH - VCANL) VTxD = 0V; dominant; 42.5Ω < RLT < 60Ω 1.5 2.25 3.0 V Vo(dif) (bus_rec) Differential bus output voltage (VCANH - VCANL) VTxD = VCC; recessive; no load -120 0 +50 mV Io(sc) (CANH) Short circuit output current at pin CANH VCANH = 0V; VTxD = 0V -45 -70 -120 mA Io(sc) (CANL) Short circuit output current at pin CANL VCANL = 36V; VTxD = 0V 45 70 120 mA Vi(dif) (th) Differential receiver threshold voltage (see Figure 5) -5V <VCANL < +12V; -5V <VCANH < +12V; 0.5 0.7 0.9 V Vihcm(dif) (th) Differential rece iver threshol d voltage for high common-mode (see Figure 5) -35V <VCANL < +35V; -35V <VCANH < +35V; 0.40 0.7 1.00 V Vi(dif) (hys) Differential receiver input voltage hysteresis (see Figure 5) -35V <VCANL < +35V; -35V <VCANH < +35V; 50 70 100 mV Ri(cm) (CANH) Common-mode input resistance at pin CANH 15 26 37 KΩ Ri(cm) (CANL) Common-mode input resistance at pin CANL 15 26 37 KΩ Ri(cm) (m) Matching between pin CANH and pi n CANL common mode input resistance VCANH = VCANL -3 0 +3 % Ri(dif) Differential input resistance 25 50 75 KΩ Ci(CANH) Input capacitance at pin CANH VTxD = VCC; not tested 7.5 20 pF Ci(CANL) Input capacitance at pin CANL VTxD = VCC; not tested 7.5 20 pF Ci(dif) Differential input capacitance VTxD = VCC; not tested 3.75 10 pF 6 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet Table 6: Characteristics (Continued) Symbol Parameter Conditions Min. Typ. Max. Unit Common-mode Stabilization (pin VSPLIT) VSPLIT Reference output voltage at pin VSPLIT Normal mode; -500µA < ISPLIT < 500µA 0.3 x VCC - 0.7 x VCC ISPLIT(i) VSPLIT leakage current Standby mode -5 +5 µA ISPLIT(lim) VSPLIT limitation current Normal mode -3 +3 mA Power-on-Reset (POR) PORL POR level CANH, CA NL, Vref in tr i- state below POR level 2.2 3.5 4.7 V Thermal Shutdown Tj(sd) Shutdown junction temperature 150 160 180 °C Timing Characteristics (see Figure 4 and Figure 5) td(TxD-BUSon) Delay TXD to bus active Cl = 1 00pF bet ween CANH to CANL 40 85 105 ns td(TxD-BUSoff) Delay TXD to bus inactive Cl = 1 00pF bet ween CANH to CANL 30 60 105 ns td(BUSon-RXD) Delay bus active to RXD Crxd = 15pF 25 55 105 ns td(BUSoff-RXD) Delay bus inactive to RXD Crxd = 15pF 40 100 105 ns tpd(rec-dom) Propagation delay TXD to RX D from recessive to dominant Cl = 1 00pF bet ween CANH to CANL 90 230 ns td(dom-rec) Propagation delay TXD to RXD from dominant to recessive Cl = 1 00pF bet ween CANH to CANL 90 245 ns td(stb-nm) Delay standby mode to normal mode 5 7.5 10 µs tdbus Dominant time for wake-up via bus 0.75 2.5 5 µs tdom(TxD) TxD dominant time for time out VTxD = 0V 300 650 1000 µs

8.5 Measurement Set-Ups and Definitions

Figure 4: Test Circuit for Automotive Transients AMIS- 42665 VCC GND CANH CANL VSPLIT5 PC20040829.5 STB RxD TxD 1 nF 100 nF +5 V 15 pF 1 nF Transient Generator 7 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet Figure 9: EME Measurements 10 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

9.0 Package Outline

SOIC-8: Plastic small outline; 8 leads; body width 150mil. AMIS reference: SOIC150 8 150 G 11 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

10.0 Soldering

10.1 Introduction to Soldering Surface Mount Packages

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in the AMIS “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mo unt IC packa ges. W ave sold ering is not al ways suitable for surface mo unt ICs, or for printed-c ircuit boards with high population densities. In these situations reflow soldering is often used.

10.2 Re-flow Soldering

Re-flow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for re-flowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seco nds d epending on heating method. T ypical re-flo w peak temperatur es rang e from 215 to 250°C. T he top-surface temperature of the packages should preferably be kept below 230°C.

10.3 Wave Soldering

Conventional singl e wave s oldering is not recommen ded for surfac e mount dev ices (SMDs) or printed-c ircuit b oards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
• Larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed circuit board;
• Smaller than 1.27mm, the footprint longitudinal axis must be parallel to the transport direction of the printed circuit board. The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45º angle to the transport direction of the printed circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is four seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

10.4 Manual Soldering

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24V or less) soldering iron applied to the flat part of the lea d. Contact time must be lim ited to 10 seco nds at up to 3 00°C. W hen using a ded icated tool, all ot her leads can be soldered in one operation within two to five seconds between 270 and 320°C. Soldering Method Package Wave Re-flow(1) BGA, SQFP Not suitable Suitable HLQFP, HS QFP, HSOP, HTSSOP, SMS Not suitable (2) Suitable PLCC (3) , SO, SOJ Suitable Suitable LQFP, QFP, TQFP Not recommended (3)(4) Suitable SSOP, TSSOP, VSO Not recommended (5) Suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5mm. 12 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com

AMIS-42665 High-Speed Low Power CAN Transceiver Data Sheet

11.0 Company or Product Inquiries

For more information about AMI Semiconductor, our technology and our product, visit our Web site at: http://www.amis.com. North America Tel: +1.208.233.4690 Fax: +1.208.234.6795 Europe Devices sold by AMIS are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMIS makes no warranty, express, statutory, implied or by description, regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. AMIS makes no warranty of merchantability or fitness for any purposes. AMIS reserves the right to discontinue production and change specifications and prices at any time and without notice. AMI Semiconductor's products are intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recommended without additional processing by AMIS for such applications. Copyright ©2005 AMI Semiconductor, Inc. 13 AMI Semiconductor – Rev. 3.1, April 06 www.amis.com