AMIS-4168X

AMIS-4168X AMI | Alldatasheet

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Technical content

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

1.0 General Description

The new AMIS-41682 and AMIS-41683 are interfaces between the protocol controller and the physical wires of the b us lines in a control area network (CAN). AMIS-41683 is identical to the AMIS-41682 but has a true 3.3V digital interface to the CAN controller. The device provides differential transmit capability but will switch in error conditions to a si ngle-wire transmitter and/or receiver. Initially it will be used for low speed applications, up to 125kBaud, in passenger cars. Both AMIS-41682 and AMIS-41683 are implemented in I2T100 technology enabling both high-voltage analog circuitry and digital functionality to co-exist on the same chip. These products consolidate the expertise of AMIS for in-ca r multiplex transceivers and support together with AMIS-30522 (VAN), AMIS-30660 and AMIS-30663 (CAN High Speed) and AMIS-30600 (LIN) another widely used physical layer.

2.0 Key Features

• Fully compatible with ISO11898-3 standard
• Optimized for in-car low-speed communication o Baud rate up to 125kBaud o Up to 32 nodes can be connected o Due to built-in slope control function and a very good matching of the CANL and CANH bus outputs, this device realizes a very low electromagnetic emission (EME) o Fully integrated receiver filters o Permanent dominant monitoring of transmit data input o Differential receiver with wide common-mode range for high electromagnetic susceptibility (EMS) in normal- and low-power modes o True 3.3V digital I/O interface to CAN controller for AMIS-41683 only
• Management in case of bus failure o In the event of bus failures, automatic switching to single-wire mode, even when the CANH bus wire is short circuited to VCC o The device will automatically reset to differential mode if the bus failure is removed o During failure modes there is full wake-up capability. o Un-powered nodes do not disturb bus lines o Bus errors and thermal shutdown activation is flagged on ERRB pin
• Protection issues o Short circuit proof to battery and ground o Thermal protection o The bus lines are protected against transients in an automotive environment o An un-powered node does not disturb the bus lines
• Support for low power modes o Low current sleep and standby mode with wake-up via the bus lines o Power-on flag on the output o Two-edge sensitive wake-up input signal via pin WAKEB
• IOs o The un-powered chip cannot be parasitically supplied either from digital inputs nor from digital outputs.

3.0 Techni cal Cha r a c t e ri stics

Table 1: Technical Characteristics Symbol Parameter Conditions Min Max Unit VCANH DC voltage at pin CANH, CANL 0 < VCC < 5.25V; no time limit -40 +40 V Vbat Voltage at pin Vbat Load-dump +40 V AMI Semiconductor – Rev. 2.0 – Feb. 07 1 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

4.0 Ordering Information

Table 2: Ordering information Marketing Name Package Temp.Range AMIS41682NGA SOIC-14 GREEN -40°C… 125°C AMIS41683NGA SOIC-14 GREEN -40°C… 125°C

5.0 Blo c k Diag ra m

Mode & wake-up control Filter Timer Receiver Failure handling AMIS-4168x RTL INH WAKE STB EN TxD ERR RxD VBAT VCC PC20050610.3 GND Vcc (*) Vcc (*) (*) For AMIS-41682 pull up to Vcc. For AMIS-41683 pull up to Vcc/2 VCC VCC AMIS-41682 ERR RxD

4 Failure

Figure 1: Block Diagram AMI Semiconductor – Rev. 2.0 – Feb. 07 2 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

6.0 Typical Application Schematic

CAN BUS LINEPC20050610.1 * optional AMIS-41683 RTL RTH CANH CANL GND VCC VBAT WAKE 5V-reg VBAT EN ERR STB RxD TxD VCC INH 910 INOUT 3.3V CAN controller GND CAN BUS LINEPC20050610.2 3.3V- reg INOUT 4.7 kΩ * optional 4.7 kΩ 6.1. A pplication Schematic Figure 2: Application Diagram AMIS-41682 Figure 3: Application Diagram AMIS-41683 AMI Semiconductor – Rev. 2.0 – Feb. 07 3 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet 6.2. Pi n Description 6.2.1. Pin Out (top view) 141 INH TxD RxD ERR STB EN WAKE VBAT RTL RTH GND CANL CANH VCC AMIS-4168x PC20041029.1 Figure 4: Pin Configuration 6.2.2. Pin Description Table 3: Pin Description Pin Name Description

1 INH Inhibit output for external voltage regulator

2 TxD Transmit data input; internal pull-up current

3 RxD Receive data output

4 ERR-B Error; wake-up and power-on flag; active low

5 STB-B Standby digital control input; active low; pull-down resistor

6 EN Standby digital control input; active high; pull-down resistor

7 WAKEB Enable digital control input; falling and rising edges are both detected

8 RTH Pin for external termination resistor at CANH

9 RTL Pin for external termination resistor at CANL

10 Vcc 5V supply input

11 CANH Bus line; high in dominant state

12 CANL Bus line; low in dominant state

13 GND Ground

14 BAT Battery supply

Functional de scription a nd c haracteristics ar e made for AMIS-41682 but a re also valid for A MIS-41683. D ifferences between the two devices will be explicitly mentioned in text. AMI Semiconductor – Rev. 2.0 – Feb. 07 4 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

7.0 Functional Description

7.1. De scription AMIS-41682 is a fault tolerant CAN transceiver which works as an interface between the CAN protocol controller and the physical wires of the CAN bus (see Figure 2). It is primarily intended for low speed applications, up t o 125kBaud, in passenger cars. The device provides differential transmit capability to the CAN bus and differential receive capability to the CAN controller. The AMIS-41683 has open-drain outputs (RXD and ERR-B pins) that allow the user to use external pull-up resistors to the required supply voltage; this can be 5V or 3.3V. To reduce EME, the rise and fall slope are limited. Together with matched CANL and CANH output stages, this allows the use of an unshielded twisted pair or a parallel pair of wires for the bus lines. The failure detection logic automatically selects a suitable transmission mode, differential or single-wire transmission. Together with the transmission mode, the failure detector will configure the output stages in such a way that excessive currents are avoided and that the circuit returns to normal operation when the error is removed. A high common-mode range for the differential receiver guarantees reception under worst case co nditions and together with the integrated filter the circuit realizes an excellent immunity against EMS. The receivers connected to pins CANH a nd CANL have threshold voltages that ensure a maximum noise margin in single-wire mode. A timer has been integrated at pin TXD. This timer prevents the AMIS-41682 from driving the bus lines to a permanent dominant state. 7.2. F ailure Detector The failure detector is fully active in the normal operating mode. After the detection of a single bus failure the detector switches to the appropriate mode. T he different wiring failures are d epicted in F igure 5. The figure also in dicates the effect of the different wiring failures on the transmitter and the receiver. The detection circuit itself is not depicted. The differential receiver threshold voltage is typically set at 3V (VCC = 5V). This ensures correct reception with a noise margin as high as possible in the normal operating mode and in the event of failures 1, 2, 4, and 6a. These failures, or recovery from them, do not destroy ongoing transmissions. During the failure, reception is still done by the differential receiver and the transmitter stays fully active. To avoid f alse triggering by external RF influences the single-wire modes are act ivated after a cert ain delay time. When t he bus failure disappears for another time delay, the transceiver switches back to differential mode. When one of the bus failures 3, 5, 6, 6a, and 7 is detected, the defective bus wire is disabled by switching off the affected bus termination and the respective output stage. A wake-up from sleep mode via the bus is possible either via a dominant CANH or CANL line. This ensures that a wake-up is possible even if one of the failures 1 to 7 occurs. If any of the wiring failure occurs, the output signal on pin ERRB will become low. On error recovery, the output signal on pin ERRB will become high again. During all single-wire transmissions, the EMC performance (both immunity and emission) is worse than in the differential mode. The int egrated receiv er f ilters suppr ess a ny HF n oise in duced int o t he bus wires. T he cut -off f requency of t hese f ilters is a compromise between propagation delay and HF suppression. In the single-wire mode, LF noise cannot be distinguished from the required signal. AMI Semiconductor – Rev. 2.0 – Feb. 07 5 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 7 : CANH shorted to CANL TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: dominant longer then Tnd_f7 RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 1 : CANH wire interrupted TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: CL = CH more then 4 pulses RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 2 : CANL wire interrupted TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: CL = CH more then 4 pulses RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 5 : CANH shorted to Gnd GND TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: CL = CH more then 4 pulses RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 3 : CANH shorted to Vbat Vbat TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: CANH > 2V longer then Tnd_f3 Vcc RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 3a : CANH shorted to Vcc Vcc TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: CANH >2V longer then Tnd_f3 RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 4 : CANL shorted to Gnd GND TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: dominant longer then Tnd_f4 RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 6 : CANL wire shorted to Vbat Vbat TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: CANL>7V RTH CANH CANL RTL RTH CANH CANL RTL TxD RxD ERR VccVbat Failure 6a : CANL shorted to Vcc Vcc TxD RxD ERR 0.6Vcc 0.4Vcc CL CH CD Error-detection: CL = CH more then 4 pulses Figure 5: Different Types of Wiring Failure AMI Semiconductor – Rev. 2.0 – Feb. 07 6 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet 7.3. L ow Power Modes The transceiver provides three low power modes that can be entered and exited via pins STBB and EN (see Figure 6). (Go-to- sleep mode is only a transition mode.) The sleep mo de is t he mode with the lowest power consumption. Pin INH is s witched to high-impedance for deactivation of the external voltage regulator. Pin CANL is biased to the battery voltage via pin RTL. If the supply voltage is provided, pins RXD and ERRB will signal the wake-up interrupt signal. The standby mode will react the same as the sleep mode but with a high-level on pin INH. The power-on standby mode is the same as the standby mode with the battery power-on flag instead of the wake-up interrupt signal on pin ERRB. The output on pin RXD will show the wake-up interrupt. This mode is only for reading out the power-on flag. Wake-up request is detected by the following events: o Local wake-up: Rising or falling edge on input WAKEB (Levels maintained for a certain period). o Remote wake-up from CAN bus : A message with five consecutive dominant bits. On a wake-up request the transceiver will set the output on pin INH high which can be used to activate the external supply voltage regulator. Note: Pin INH is also set similar as an after wake up event by VBAT voltage being below the battery power on flag level. See FLAG_VBAT in Table 6) If VCC is provided, the wake-up request can be read o n the ERR-B or R XD outputs so the external microcontroller can wake-up the transceiver (switch to normal operating mode) via pins STB-B and EN. In the low power modes the failure detection circuit remains partly active to prevent increased power consumption in the event of failures 3, 3a, 4, and 7. The go-to-sleep-mode is only a transition mode. The pin INH stays active for a limited time. During this time the circuit can still go to another low-power mode. After this time the circuit goes to the sleep-mode. In case of a wake up request (from BUS or WAKEB pin) during this transition time, the wake up request ha higher priority than go-to-sleep and INH will not be deactivated. Once VCC is below the threshold level of LAG_Vcc , the signals on pins STB-B and EN will internally be set to low-level to provide fail safe functionality. AMI Semiconductor – Rev. 2.0 – Feb. 07 7 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet www.amis.com STB change state Power-On Stand-by High Low Act EN change state STB change state 1) Only when Vcc > POR_Vcc 2) INH active for a time = T_GoToSleep 3) Local Wake-up through pin Wake which change state for a time > T_wake_min Remote Wake-up through pin CANL or CANH when dominant for a time >TCANH_min or TCANL_min 4) Mode Change through pins STB and EN is only possible if Vcc > POR_Vcc STB ERR RxDINHEN RTL POR- flag WU- int Vbat Normal Mode High High Act STB ERR RxDINHEN RTL Err- flag Rec. out Vcc Standby Mode Low Low Act STB ERR RxDINHEN RTL Vbat GoTo Sleep Mode 7.4. Po wer-on After power-on (VBAT switched on) the signal on pin INH will become high and an internal power-on flag will be set. This flag can be read in the power-on standby mode via pin ERRB (STB-B = 1; EN = 0) and will be reset by entering the normal operating mode. 7.5. Pro tections A current limiting circuit protects the transmitter output stages against short circuit to positive and negative battery voltage. If the junction temperature exceeds a maximum value, the transmitter output stages are disabled and flagged on ERRB pin. Because the transmitter is responsible for the major part of the power dissipation, this will result in reduced power dissipation and hence a lower chip temperature. All other parts of the IC will remain operating. The pins CANH and CANL are protected against electrical transients that may occur in an automotive environment. Low High Act STB ERR RxDINHEN RTL Vbat Sleep Mode Low Low Hz STB ERR RxDINHEN RTL VbatWU- int WU- int WU- int WU- int WU- int 1) WU- int 1) EN change state EN, STB change state EN, STB change state Time-out GoToSleep mode Local or Remote Wake-up 3) Power-On Mode Change 4) Figure 6: Low Power Modes AMI Semiconductor – Rev. 2.0 – Feb. 07

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

8.0 E l ec tr ic al C h ar ac ter i s t i c s

8.1. De finitions All voltages are referenced to GND (pin 13). Positive currents flow into the IC. Sinking current means that the current is flowing into the pin. Sourcing current means that the current is flowing out of the pin. 8.2. Absolute Maximum Ratings Stresses a bove t hose l isted in t his cl ause ma y ca use p ermanent d evice f ailure. E xposure t o a bsolute ma ximum ratings f or extended periods may effect device reliability. Table 4: Absolute Maximum Ratings Symbol Parameter Min. Max. Unit VCC Supply voltage on pin VCC -0.3 +6 V VBAT Battery voltage on pin BAT -0.3 +40 V Vdig DC voltage on pins EN, STB-B, ERR-B, TxD, RxD -0.3 VCC + 0.3 V VCANH-L DC voltage on pin CANH, CANL -40 +40 V Vtran-CAN Transient voltage on pins CANH and CANL (Figure 11) note 1 -350 +350 V VWAKE DC input voltage on pin WAKE -40 +40 V VINH DC output voltage on pin INH -0.3 VBAT + 0.3 V VRTH-L DC voltage on pin RTH , RTL -40 40 V RRTH Termination resistance on pin RTH 500 16000 Ω RRTL Termination resistance on pin RTL 500 16000 Ω Tjunc Maximum junction temperature -40 +150 ºC Electrostatic discharge voltage (CANH- and CANL pin) HBM; note 2 -6 +6 kV Electrostatic discharge voltage (other pins) HBM; note 2 -3.0 +3.0 kV Vesd Electrostatic discharge voltage; machine model; note 3 -500 +500 V Notes: 1. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, and 3b. Class C operation 2. Equivalent to discharging a 100pF capacitor through a 1.5kOhm resistor. 3. Equivalent to discharging a 200pF capacitor through a 10Ohm resistor and a 0.75µH coil. 8.3. T hermal Characteristics Table 5: Thermal Characteristics Symbol Parameter Conditions Value Unit Rth(vj-a) Thermal resistance from junction to ambient in SSOP14 package (2 layer PCB) In free air 140 K/W Rth(vj-s) Thermal resistance from junction to substrate of bare die In free air 30 K/W AMI Semiconductor – Rev. 2.0 – Feb. 07 9 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet 8.4. Ch aracteristics VCC = 4.75V to 5.25V; VBAT = 5V to 36V; Tjunc = −40°C to +150°C; unless otherwise specified. Table 6: Characteristics AMIS-4168x Symbol Parameter Conditions Min. Typ. Max. Unit Supplies Vcc Vbat Normal operating mode; VTXD = VCC (recessive) 1 3.7 6.3 mA ICC Supply current Normal operating mode; VTXD = 0V (dominant); no load 1 8 12 mA LAG_Vcc Forced low power mode VCC rising VCC falling 2.45 4.5 V V IBAT Battery current on pin BAT In all modes of operation; 500Ω between RTL - CANL 500Ω between RTH - CANH VBAT = WAKE = INH = 5 to 36V 10 110 230 µA ICC+ IBAT Supply current plus battery current Low power modes; Vcc = 5V; Tamb = -40°C to 100°C VBAT = WAKE = INH = 5 to 36V 30 60 µA ICC+ IBAT Supply current plus battery current Low power modes; Vcc = 5V; Tamb = 100°C to 150°C VBAT = WAKE = INH = 5 to 36V 80 µA FLAG_VBAT Power-on flag-level for pin Vbat For setting power-on flag For not setting power-on flag 3.5 2.1 2.4 V V Pins STB-B, EN and TXD R-PD Pull-down resistor at pin EN and STB-B 1V 190 360 600 KΩ T_Dis_TxD Dominant time-out for TxD Normal mode; VtxD = 0V 0.75 4 ms T_GoToSleep Minimum hold-time for Go-To-Sleep mode 5 50 µs Pin WAKE-B IIL Low-level input current VWAKE = 0V; VBAT = 27V -10 -1 µA Vth(WAKE) Wake-up threshold voltage VSTB-B = 0V 2.5 3.2 3.9 V T_Wake_Min Minimum time on pin wake (debounce time) VBAT = 12V; low power mode; for rising and falling edge 7 38 µs Pin INH Delta_VH High-level voltage drop IINH = 0.18mA 0.8 V I_leak Leakage current Sleep mode; VINH = 0V 1 µA Table 7: Characteristics AMIS-41682 (5V version) Symbol Parameter Conditions Min. Typ. Max. Unit Pins STB-B, EN and TXD VIH High-level input voltage 0.7 x Vcc 6.0 V VIL Low-level input voltage -0.3 0.3 x Vcc V I-PU-H High-level input current pin TXD TXD = 0.7 * Vcc -10 -200 µA I-PU-L Low-level input current pin TXD TXD = 0.3 * Vcc -80 -800 µA Pins RXD and ERR-B VOH High-level output voltage lsource = -1mA VCC - 0.9 VCC V Isink = 1.6mA 0 0.4 V VOL Low-level output voltage Isink = 7.5mA 0 1.5 V Table 8: Characteristics AMIS-41683 (3.3V version) Symbol Parameter Conditions Min. Typ. Max. Unit Pins STB-B, EN and TXD VIH High-level input voltage 2 6.0 V VIL Low-level input voltage -0.3 0.8 V I-PU-H High-level input current pin TXD TXD = 2V -10 µA Pins RXD and ERR-B VOL Low-level output voltage open drain lsink = 3.2mA 0.4 V I_leak Leakage when driver is off VERR-B = VRXD = 5V 1 µA AMI Semiconductor – Rev. 2.0 – Feb. 07 10 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet Table 9: Characteristics AMIS-4168x continued Symbol Parameter Conditions Min. Typ. Max. Unit Pins CANH and CANL (Receiver) Vdiff Differential receiver threshold voltage No failures and bus failures 1, 2, 4, and 6a; see Figure 5 VCC = 5V VCC = 4.75V to 5.25V -3.25 0.65 x Vcc 0.6 x Vcc -2.75 0.55 x Vcc V V VseCANH Single-ended receiver threshold voltage on pin CANH Normal operating mode and failures 4, 6 and 7 VCC = 5V VCC = 4.75 to 5.25V 1.6 0.32 x Vcc 1.775 0.355 x Vcc 1.95 0.39 x Vcc V V VseCANL Single-ended receiver threshold voltage on pin CANL Normal operating mode and failures 3 and 3a VCC = 5V VCC = 4.75 to 5.25V 0.61 x Vcc 3.2 0.645 x Vcc 3.4 0.68 x Vcc V V Vdet(CANL) Detection threshold voltage for short circuit to battery voltage on pin CANL Normal operating mode 6.5 7.3 8 V Vth(wake) Wake-up threshold voltage On pin CANL On pin CANH Low power modes Low power modes 2.5 1.1 3.2 1.8 3. 9 2.25 V V DVth(wake) Difference of wake-up Threshold voltages Low power modes 0.8 1.4 V Pins CANH and CANL (Transmitter) VO(reces) Recessive output voltage On pin CANH On pin CANL VTXD = VCC RRTH < 4kΩ RRTL < 4kΩ Vcc - 0.2 0.2 V V VO(dom) Dominant output voltage On pin CANH On pin CANL VTXD = 0V; VEN = VCC ICANH = -40mA ICANL = 40mA Vcc - 1.4 1.4 V V Normal operating mode; VCANH = 0V; VTXD = 0V -110 -80 -45 mA IO(CANH) Output current on pin CANH Low power modes; VCANH = 0V; VCC = 5V -1.6 0.5 1.6 µA Normal operating mode; VCANL = 14V; VTXD = 0V 45 80 110 mA IO(CANL) Output current on pin CANL Low power modes; VCANL = 12V; VBAT = 12V -1 0.5 1 µA Pins RTH and RTL Rsw(RTL) Switch-on resistance between pin RTL and VCC Normal operating mode; I(RTL)> -10mA 100 Ω Rsw(RTH) Switch-on resistance between pin RTH and ground Normal operating mode; I(RTH)< 10mA 100 Ω VO(RTH) Output voltage on pin RTH Low power modes; IO = 1mA 1.0 V IO(RTL) Output current on pin RTL Low power modes; VRTL = 0V -1.25 -0.3 mA Ipu(RTL) Pull-up current on pin RTL Normal operating mode and failures 4, 6 and 7; VRTL= 0V -75 µA Ipd(RTH) Pull-down current on pin RTH Normal operating mode and failures 3 and 3a -75 µA Thermal Shutdown Tj Junction temperature For shutdown 150 180 °C AMI Semiconductor – Rev. 2.0 – Feb. 07 11 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet 8.5. T iming Characteristics VCC = 4.75V to 5.25V; VBAT = 5V to 27V; VSTB-B = VCC; Tjunc = −40°C to +150°C; unless otherwise specified. Table 10: Timing Characteristics AMIS-4168x Symbol Parameter Conditions Min Typ Max Unit tt(r-d) CANL and CANH output transition time for recessive- to-dominant 10 to 90%; C1 = 10nF; C2 = 0; R1 = 125Ω; see Figure 7 0.35 0.60 1.4 µs tt(d-r) CANL and CANH output transition time for dominant-to- recessive 10 to 90%; C1 = 1nF; C2 = 0; R1 = 125Ω; see Figure 7 0.2 0.3 0.7 µs No failures C1 = 1nF; C2 = 0; R1 = 125Ω C1 = C2 = 3.3nF; R1 = 125Ω 0.75 1.4 1.5 2.1 µs µs Failures 1, 2, 5, and 6a; see Figure 5, 7 C1 = 1nF; C2 = 0; R1 = 125Ω C1 = C2 = 3.3nF; R1 = 125Ω 1.2 1.4 1.9 2.1 µs µs tPD(L) Propagation delay TXD to RXD (LOW) Failures 3, 3a, 4, 6, and 7; see Figure 5, 7 C1 = 1nF; C2 = 0; R1 = 125Ω C1 = C2 = 3.3nF; R1 = 125Ω 1.2 1.5 1.9 2.2 µs µs No failures C1 = 1nF; C2 = 0; R1 = 125Ω C1 = C2 = 3.3nF; R1 = 125Ω 0.75 2.5 1.5 3.0 µs µs Failures 1, 2, 5, and 6a; see Figure 5, 7 C1 = 1nF; C2 = 0; R1 = 125Ω C1 = C2 = 3.3nF; R1 = 125Ω 1.2 2.5 1.9 3.0 µs µs tPD(H) Propagation delay TXD to RXD (HIGH) Failures 3, 3a, 4, 6, and 7; see Figure 5, 7 C1 = 1nF; C2 = 0; R1 = 125Ω C1 = C2 = 3.3nF; R1 = 125Ω 1.2 1.5 1.9 2.2 µs µs tCANH(min) Minimum dominant time for wake-up on pin CANH Low power modes; VBAT = 12V 7 38 µs tCANL(min) Minimum dominant time for wake-up on pin CANL Low power modes; VBAT = 12V 7 38 µs Normal mode Failure 3 and 3a Failure 4, 6 and 7 1.6 0.3 8.0 1.6 ms ms tdet Failure detection time Low power modes; VBAT = 12V Failure 3 and 3a Failure 4 and 7 1.6 0.1 8.0 1.6 ms ms Normal mode Failure 3 and 3a Failure 4 and 7 Failure 6 0.3 125 1.6 750 ms µs µs trec Failure recovery time Low power modes; VBAT = 12V Failures 3, 3a, 4, and 7 0.3 1. 6 ms Dpc Pulse-count difference between CANH and CANL Normal mode and failures 1, 2, 4, and 6a Failure detection (pin ERR-B becomes LOW) Failure recovery (pin ERR-B becomes HIGH) AMI Semiconductor – Rev. 2.0 – Feb. 07 12 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet www.amis.com AMIS-4168x RTL RTH CANH CANL GND BATTERY WAKEVBAT EN ERR STB RxD TxD VCC INH 910 +5V 20 pF 1 nF 1 nF 1 nF 1 nF 125 Ω 511 Ω511 Ω PC20041029.5 Transient Generator Figure 11: Test Circuit for Schaffner Tests (ISO 7637 part AMI Semiconductor – Rev. 2.0 – Feb. 07

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

9.0 Package Outline

SOIC-14: Plastic small outline; 14 leads; body width 150 mil; JEDEC: MS-012 AMIS reference: SOIC150 14 150 G AMI Semiconductor – Rev. 2.0 – Feb. 07 16 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

10.0 Soldering

10.1 Introduction to Soldering Surface Mount Packages

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in the AMIS “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used.

10.2 Re-flow Soldering

Re-flow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed- circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical re-flow peak temperatures range from 215 to 250°C. The top-surface temperature of the packages should preferably be kept below 230°C.

10.3 Wave Soldering

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double- wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e): o Larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; o Smaller than 1.27mm, the footprint longitudinal axis must be parallel to the transport direction of the printed- circuit board. The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45º angle to the transport direction of the printed- circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is four seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

10.4 Manual Soldering

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300°C. When using a dedicated tool, all other leads can be soldered in one operation within two to five seconds between 270 and 320°C. Table 11: Soldering Process Soldering Method Package Wave Re-flow(1) BGA, SQFP Not suitable Suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS Not suitable (2) Suitable PLCC (3) , SO, SOJ Suitable Suitable LQFP, QFP, TQFP Not recommended (3)(4) Suitable SSOP, TSSOP, VSO Not recommended (5) Suitable Notes: 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods.” 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5mm. AMI Semiconductor – Rev. 2.0 – Feb. 07 17 www.amis.com

AMIS-4168x Fault Tolerant CAN Transceiver Data Sheet

11.0 Company or Product Inquiries

For more information about AMI Semiconductor, our technology and our product, visit our Web site at: http://www.amis.com. North America Tel: +1.208.233.4690 Fax: +1.208.234.6795 Europe Devices sold by AMIS are covered b y the w arranty and paten t indem nification prov isions app earing in i ts Terms of Sal e only . AM IS ma kes no w arranty, ex press, statutory, implied or by description, regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. AMIS makes no warranty of mer chantability or fitness for any purposes. AM IS reserves the right to discontinue production an d change spe cifications and price s at an y time and without notice . AMI Semi conductor's prod ucts are i ntended for u se in commercial applications. Appli cations req uiring ex tended tempe rature r ange, u nusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recommended w ithout additional processing by AMIS for such applications. Copyright ©2007A MI Semiconductor, Inc. AMI Semiconductor – Rev. 2.0 – Feb. 07 18 www.amis.com