AMIS-39100

AMIS-39100 AMI | Alldatasheet

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Technical content

AMIS-39100: Octal High Side Driver with Protection Data Sheet

1.0 General Description

The AMIS-39100 is a ge neral purpose IC with eight integrated high side (HS) output d rivers. The device is des igned to contro l t he power of virtually any type of load in a 12V automotive environment, such as transistor gates, relays, LEDs etc. Each of the output drivers of the AMIS-39100 is able to drive up to 275mA continuously when connected to an inductive load of 300mH. Even higher driver output currents can be obtained as long as the total c urrent of the device is limited. The integrated charge-pump of the AMIS-39100, which uses only one low cost external capacitor, avoids thermal runaways even if the battery voltage is low. The HS drivers withstand short to gr ound (even when AMIS-39100 has lost its ground connection), short to th e battery and has over-current limitation. In case of a potential hazardous situation, the drivers are switched off and the diagnostic state of the HS drivers can be read out via serial peripheral interface (SPI). In case of a short to ground, the output driver is deactivated after a de-bounce time. The AMIS-39100 can be connected to a 3.3V or 5V m icrocontroller by means of a SPI interface. This SPI interface is us ed to control each of the o utput drivers in dividually (on or off) and to read the stat us of each in dividual output driver (read-back of possible error conditions). This allows the detection of error situations for each driver individually. Furthermore, the SPI interface can be used to read- back the status of the built-in thermal shutdown protection. The AMIS-39100 has a low-power mode and excellent handling and system ESD characteristics.

2.0 Key Features

• Eight HS drivers
• Up to 830mA continuous current per driver pair (resistive load)
• Charge pump with one external capacitor
• Serial peripheral interface (SPI)
• Short circuit protection
• Diagnostic features
• Power-down mode
• Internal thermal shutdown
• 3.3V and 5V microcontroller compliant
• Excellent system ESD
• Automotive compliant
• SO28 package with low Rthja

3.0 Typical Applications

• Automotive dashboard
• Automotive load management
• Actuator control
• LED driver applications
• Relays and solenoids
• Industrial process control

4.0 Ordering Information

Product Name Package Temperature Range AMIS39100AGA PSOP 300-28 (JEDEC MS-013) -40°C… 105°C 1 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet 2 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

5.0 Block Diagram

Figure 1: Block Diagram OUT1 OUT2 OUT3 OUT4 VB1 OUT1 VB2 OUT2 OUT3 OUT4 OUT5 OUT6 OUT7 OUT8 VB3 OUT5 VB4 OUT6 OUT7 OUT8 LOGIC Control Power on Reset Thermal shutdown SPI interface Diagnostic Oscillator Charge- pump Bandgap AMIS-39100 GND4 GND5 GND6 GND3 GND2 CAPA1 DIN DOUT CLK WR VDDN 7 8 15 21 22 2826 TEST2 1 14 16 TEST GND1PDB TEST1 PC20070110.4

AMIS-39100: Octal High Side Driver with Protection Data Sheet

6.0 Typical Application Diagram

GND1..6 VCC VBAT DIN DOUT CLK WR PDB 26 2427 Micro- controller GND PC20070110.2 5V-reg Rload1 Lload1 Cout1 Rload8 Lload8 Cout8 TEST1..2 VB1..4 VDDN 81528 2211 614

17 CAPA

Figure 2: Typical Application Diagram

6.1 External Components

It is important to properly decouple the power supplies of the chip with external capacitors that have good high frequency properties. The VB1, VB2, VB3, and VB4 pins are shorted on the PCB level. Also GND1, GND2, GND3, GND4, GND5, GND6, TEST, TEST1, and TEST2 are shorted on the PCB level. Table 1: External Components Component Function Min. Value Max. Tol. [%] Units CVB Decoupling capacitor; X7R 100 ± 20 nF Ccharge_pump Charge pump capacitor (1) 0.47 47 nF Cout (2) EMC capacitor on connector 1 nF Cout (2) Decoupling capacitors on OUT 1 to 8; 50V 22 ± 20 nF CVDD Decoupling capacitors; 50V 22 ± 20 nF RLoad Load resistance 65 ± 10 Ω LLoad Load inductance at maximum current 300 350 mH Notes: (1) The capacitor must be placed close to the AMIS-39100 pins on the PCB. (2) Both capacitors are optional and depend on the final application and board layout. 3 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

7.0 Pin Description

PC20070110.1 GND1 GND5 VB4 OUT7 GND4 VB1 OUT2 GND2 OUT3 VB2 OUT6 VB3 OUT4 DIN DOUT TEST2 OUT5 CAPA1 TEST GND3 Figure 3: Pin Description of the AMIS-39100 Table 2: Pin Out Pin Name Description

1 TEST1 Connect to GND

2 CLK Schmitt trigger SPI CLK input

3 WR Schmitt trigger SPI write enable input

4 OUT1 HS driver output

5 VB1 Battery supply

6 OUT2 HS driver output

7 GND1 Power ground and thermal dissipation path junction-to-PCB

8 GND2 Power ground and thermal dissipation path junction-to-PCB

9 OUT3 HS driver output

10 VB2 Battery supply

11 OUT4 HS driver output

12 DIN SPI input pin (Schmitt trigger or CMOS inverter)

13 DOUT Digital three state output for SPI

14 TEST2 Connect to GND

15 GND3 Power ground and thermal dissipation path junction-to-PCB

16 TEST Connect to GND

17 CAPA1 Charge pump capacitor pin

18 OUT5 HS driver output

19 VB3 Battery supply

20 OUT6 HS driver output

21 GND4 Power ground and thermal dissipation path junction-to-PCB

22 GND5 Power ground and thermal dissipation path junction-to-PCB

23 OUT7 HS driver output

24 VB4 Battery supply

25 OUT8 HS driver output

26 PDB Schmitt trigger power-down input

27 VDDN Digital supply

28 GND6 Power ground and thermal dissipation path junction-to-PCB

4 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

8.0 Electrical and Environmental Ratings

8.1 Absolute Maximum Ratings

Stress levels above those listed in t his paragraph may cause immediate and p ermanent device f ailure. I t is not recommended that more than one of these conditions be applied simultaneously. Table 3: Absolute Maximum Ratings Symbol Description Min. Max. Unit VDDN Power supply voltage GND - 0.3 6 V VB DC battery supply on pins VB1 to VB4 load dump, Pulse 5b 400ms GND - 0.3 35 V Iout_ON Maximum output current OUTx pins (1) The HS driver is switched on -3000 350 mA Iout_OFF Maximum output current OUTx pins (1) The HS driver is switched off -350 350 mA I_OUT_VB Maximum output current VB1, 2, 3, 4 pins -700 3750 mA Vcapa1 DC voltage on pins capa1 0 VB+16.5 V Vdig_in Voltage on digital inputs CLK, PDB, WR, DIN -0.3 VDDN+0.3 V VESD Pins that connect the application (pins VB1..4 and Out1..8) (2) All other pins (2) kV kV VESD ESD according charged device model (3) -750 +750 V Tj Junction temperature (T<100 hours) -40 175 °C Tmr Ambient temperature under bias -40 105 °C Notes: (1) The power dissipation of the chip must be limited not to exceed the maximum junction temperature Tj. (2) According to HBM standard MIL-STD-883 method 3015.7 (3) According to norm EOS/ESD-STM5.3.1-1999 robotic mode 5 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

8.2 Thermal Characteristics

Table 4: Thermal Characteristics of the Package Symbol Description Conditions Value Unit Rth(vj-a) Thermal resistance from junction to ambient in power-SO28 package In free air 145 K/W Table 5: Thermal Characteristics of the AMIS-39100 on a PCB PCB Design Conductivity Top and Bottom Layer Rthja (1) Unit Two layer (35um) Copper planes according to Figure 4 + 25% copper for the remaining areas 24 K/W Two layer (35um) Copper planes according to Figure 4 + 0% copper for the remaining areas 53 K/W Four layer JEDEC: EIA/JESD51-7 25% copper coverage 25 K/W One layer JEDEC: EIA/JESD51-3 25% copper coverage 46 K/W Note: (1) These values are informative only. Rthja = Thermal resistance from junction to ambient Figure 4: Layout Recommendation for Thermal Characteristics 114.3 76.2 5 mm5 mm 5 mm GND copper 5 mm Top PCB view 114.3 76.2 Ground plane GND copper 25 % filled by GND copper Bottom PCB view 6 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

8.3 Electrical Parameters

Operation o utside th e operating ra nges for e xtended per iods ma y affect device rel iability. T otal cu mulative d well time a bove th e maximum operating rating for the power supply or temperature must be less than 100 hours. The parameters below are independent from load type (see Section 8.4). 8.3.1. Operating Ranges Table 6: Operating Ranges Symbol Description Min. Max. Unit VDDN Digital power supply voltage 3.1 5.5 V Vdig_in Voltage on digital inputs CLK, PDB, WR, DIN -0.3 VDDN V VB (1) DC battery supply on Pins VB1 to VB4 3.5 16 V Tamb Ambient temperature -40 105 °C Notes: (1) The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj of 130°C. 8.3.2. Electrical Characteristics Table 7: Electrical Characteristics Symbol Description Min. Max. Unit I_VB_norm (1) Consumption on VB without load currents In normal mode of operation PDB = high 3.5 mA I_PDB_3.3 (1)(2) Sum of VB and VDDN consumption in power down mode of operation PDB = low, VDDN 3.3V, VB = 12V, 23°C ambient CLK and WR are at VDDN voltage 25 µA I_PDB_5 (1)(2) Sum of VB and VDDN consumption in power down mode of operation PDB = low, VDDN 5V, VB = 24V, 23°C ambient CLK and WR are at VDDN voltage 40 µA I_PDB_MAX_VB VB consumption in power down mode of operation PDB = low, VB = 16V 10 µA I_VDDN_norm (1) Consumption on VDDN In normal mode of operation PDB = high CLK is 500kHz, VDDN = 5.5V, VB = 16V 1.6 mA R_on_1..8 On resistance of the output drivers 1 through 8 Vb= 16V (normal battery conditions and Tamb = 25°C) Vb = 4.6V (worst case battery condition and Tamb = 25°C) Ω Ω I_OUT_lim_x (1) Internal over-current limitation of HS driver outputs 0.65 2 A T_shortGND_HSdoff The time from short of HS driver OUTx pin to GND and the driver de-activation; driver is Off. Detection works from VB minimum of 7V VDDN minimum is 3V 5,4 µs TSD_H (1) High TSD threshold for junction temperature (temperature rising) 130 170 °C TSD_HYST TSD hysteresis for junction temperature 9 18 °C Notes: (1) The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj. (2) The cumulative operation time mentioned above may cause permanent device failure. 7 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

8.4 Load Specific Parameters

HS driver parameters for specific loads are specified in following categories: A. Parameters for inductive loads up to 350mH and Tambient up to 105°C B. Parameters for inductive loads up to 300mH and Tambient up to 105°C C. Parameters for resistive loads and Tambient up to 85°C Table 8: Load Specific Characteristics A. Inductive Load up to 350mH and Tambient up to 105°C Symbol Description Min. Max. Unit I_OUT_ON_max. Maximum output per HS driver, all eight drivers might be active simultaneously 240 mA B. Inductive Load up to 300mH and Tambient up to 105°C I_OUT_ON_max. Maximum output per HS driver, all eight drivers might be active simultaneously 275 mA C. Resistive Load and Tambient up to 85°C I_OUT_ON_max. Maximum output per HS driver, all eight drivers might be active simultaneously 350 mA Maximum output per one HS driver, only one can be active 650 mA Maximum output per HS driver, only two HS drivers from a different pair can be active simultaneously 500 mA Maximum output per one HS driver pair 830 mA Note: The parameters above are not tested in production but are guaranteed by design.The overall current capability limitations need to be respected at all times. The maximum current spec ified i n T able 8 cannot a lways be obt ained. The pract ically o btainable maximum driv e current h eavily depends on the thermal design of the application PCB (see Section 8.2). The available power in the package is: (TSD_H - T_ambient) / Rthja With TSD_H = 130°C and Rthja according to Table 5.

8.5 Charge Pump

The HS drivers use f loating NDMOS transistors as po wer devices. To provide the gate voltages for the NDMOS of the HS driv ers, a charge pump is integrated. The storage capacitor is an external one. The charge pump oscillator has typical frequency of 4MHz. 8 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

8.6 Diagnostics

8.6.1. Short-Circuit Diagnostics The diagn ostic circuit in t he AMIS-39100 monitors t he actual out put st atus at t he pi ns of t he devi ce and st ores t he result in t he diagnostic register, which is t hen latched in the output register at the rising edge of t he WR-pin. Each driver has its corresponding diagnostic bit DIAG_x. By comparing the actual output status (DIAG_x) with the requested driver status (CMD_x) you can diagnose the correct operation of the application according to Table 9. 8.6.2. Thermal Shutdown (TSD) Diagnostic In case of TSD activation, all bits DIAG 1 to DIAG 8 in the SPI output register are set into the fault state and all drivers will be switched off (see Table 9). The TSD error condition is active until it is reset by the next correct communication on SPI interface (i.e. number of clock pulses during WR=0 is divisible by 8), provided that the device has cooled down under the TSD trip point. Table 9: OUT Diagnostics Requested driver status CMD_x Actual output status DIAG_x Diagnosis On 1 High 1 Normal state On 1 Low 0 Short to ground or TSD (2) Off 0 High 1 Short to VB or missing load (1) or TSD (2) Off 0 Low 0 Normal state (1) Note: (1) The correct diagnostic information is available after T_diagnostic_OFF time. (2) All 8 diagnostic bits DIAG_x must be in the fault condition to conclude a TSD diagnostic. 8.6.3. Ground Loss Due to its design, the AMIS-39100 is protected for withstanding module ground loss and driver output shorted to ground at the same time. 8.6.4. Power Loss Table 10: Power Loss VDDN VB Possible Case Action 0 0 System stopped Nothing 0 1 Start case or sleeping mode with missing VDDN Eight switches in the off-state Power down consumption on VB 1 0 Missing VB supply VDDN normally present Eight switches in the off-state Normal consumption on VDDN 1 1 System functional Nominal functionality 9 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

8.7 SPI Interface

The serial peripheral interface (SPI) is used to allow an external microcontroller (MCU) to communicate with the device. The AMIS- 39100 acts always as a slave and it can’t initiate any transmission. 8.7.1. SPI Transfer Format and Pin Signals The SPI block diagram and timing characteristics are shown in Figure 6 and Figure 7. During an SPI transfer, data is simultaneously sent to and received from the device. A serial clock line (CLK) synchronizes shifting and sampling of t he inf ormation on t he t wo s erial data lines ( DIN an d DOUT). DOU T sign al is t he o utput f rom t he AMI S-39100 t o t he external MCU and DIN signal is the input from the MCU to the AMIS-39100. The WR-pin selects the AMIS-39100 for communication and can also be used as a chip select (CS) in a multiple-slave system. The WR-pin is active low. If AMIS-39100 is not selected, DOUT is in high impedance state and it does not interfere with SPI bus activities. Since AMIS-39100 always shifts data out on the rising edge and samples the input data also on the rising edge of the CLK sign al, the MCU SPI port must be conf igured to match this operation. SPI clock idles high between the transferred bytes. The diagram i n Figure 7 represents the SPI timing di agram for 8- bit communication. Communication starts with a falling edge on the WR-pin that latches the status of the diagnostic register into the SPI output register. Subsequently, the CMD_x bits – representing the newly requested driver status – are shifted into the input register and simultaneously, the DIAG_x bits – representing the actual output status – are shifted out. The bits are shifted with x=1 first and ending with x=8. At the rising edge of the WR-pin, the data in the input register is latched int o t he command re gister an d a ll drivers ar e sim ultaneously s witching t o t he n ewly requested st atus. S PI communication is ended. In case the SPI master does only support 16-bit communication, then the master must first send 8 clock pulses with dummy DIN data and ignoring the DOUT data. For the next 8 clock pulses the above description can be applied. The required timing for serial to peripheral interface is shown in Table 11. Table 11: Digital Characteristics Symbol Description Min. Max. Unit T_CLK Maximum applied clock frequency on CLK input 500 kHz T_DATA_ready Time bet ween f alling edge on WR and first bit of data read y on DOUT output (driver going from HZ state to output of first diagnostic bit) 2 µs T_CLK_first First clock edge from falling edge on WR 3 µs T_setup (1) Set-up time on DIN 20 ns T_hold (1) Hold time on DIN 20 ns T_DATA_next Time between rising edge on CLK and next bit ready on DOUT (capa (capacitor tied to the DOUT pin is 30pF max.) 100 ns T_SPI_END Time between last CLK edge and WR rising edge 1 µs T_risefall Rise and fall time of all applied signals (maximum loading capacitance is 30pF) 5 20 ns T_WR Time between two rising edge on WR (repetition of the same command) 300 µs Note: (1) Guaranteed by design Normal mode verification:

• The command is the set of eight bits loaded via SPI, which drives the eight HS drivers on or off.
• The command is activated with rising edge on WR pin. Table 12: Digital Characteristics Symbol Description Min. Max. Unit T_command_L_max. (1) Minimum time b etween t wo op posite commands for inductive loads and maximum HS driver current of 275mA 1 s T_command_R (1) Minimum time between t wo op posite commands for resisti ve loads and maximum HS driver current of 350mA 2 ms T_PDB_recov The time bet ween the rising ed ge on the P DB input and 90 percent of VB- 1V on all HS driver outputs. (all drivers ar e activated, pure resistive load 35mA on all outputs) 1 ms Note: (1) Guaranteed by design 10 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet t 50% PD VOUTi 90% {VBi - 1V} t_PD_recov PC20070110.7 Figure 5: Timing for Power-down Recovery CMD8 CMD1 CMD DRI VER DIAG DIAG

1 STA TE DIAG

1 MEMO DIAG

INPUT REGISTER OUTPU T RE GISTE R COMMAND REGI STER MEM ORY DIAG Figure 6: SPI Block Diagram 11 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet 1 2 3 4 5 6 7 8 Trans fer dat a f rom diag nos tic regi sters to th e output registers Falling ed ge on W R Tran sfer from input registers to the command r egi sters (Rising ed ge on W R) CM D CM D CMD CM D CM D DIAG DIAG DIAG DIAG DIAG CMD CMD CMD DIN : DRI VE R CO MMAND OU T DO UT : O UTPUTs THE STA TE O F DI AGNO STICs IN DIAG DIAG DIAG 7High Z High Z W R CL K DIN DO UT OU T1 to 8 Figure 7: Timing Diagram 12 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

9.0 Assembly and Delivery

Figure 8: Package Outline Drawing 13 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

10.0 Soldering

10.1 Introduction to Soldering Surface Mount Packages

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in the AMIS “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mo unt I C packages. Wave sold ering is not al ways suitable for surface mount I Cs, or f or printed-circuit boards with high population densities. In these situations reflow soldering is often used.

10.2 Re-flow Soldering

Re-flow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for re-flowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical re-flow peak temperatures range from 215 to 260°C.

10.3 Wave Soldering

Conventional singl e wave s oldering is not recommen ded f or surf ace mount dev ices (SMDs) or print ed-circuit b oards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e): o Larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the print-circuit board; o Smaller than 1.27mm, the footprint longitudinal axis must be par allel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be pl aced at a 45° ang le to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is four seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 14 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

10.4 Manual Soldering

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300°C. When using a dedicated tool, all other leads can be soldered in one operation within two to five seconds between 270 and 320°C. Table 13: Soldering Process Package Soldering Method Wave Re-flow (1) BGA, SQFP Not suitable Suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS Not suitable (2) Suitable PLCC (3) , SO, SOJ Suitable Suitable LQFP, QFP, TQFP Not recommended (3)(4) Suitable SSOP, TSSOP, VSO Not recommended (5) Suitable Notes: 1. All SMD packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the dry pack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering i s considered, then the package mu st be pl aced at a 45° angle to the solder wave direction. The package footprint must in corporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8mm; it i s definitely not suitable for packages with a pitch (e) equal or smaller than 0.65mm. 5. Wave soldering i s only suitable for S SOP and TSSO P packages with a pitch (e) eq ual to or l arger than 0.65mm; it i s definitely not suitable for pa ckages with a pitch (e) equal to or smaller than 0.5mm.

11.0 Revision History

Table 14: Revision History Revision Date Description

0.1 Various Initial document

0.2 June 2006 Document formatted into new AMIS template

0.3 January 2007 Update of some values in T ables 1, 2, 3, 6 and 7. Update of explanation in para graph 8.6: Diagnostics, and paragraph 8.7: SPI Interface. Update of Figure 8 Added section 10.0: Soldering 15 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com

AMIS-39100: Octal High Side Driver with Protection Data Sheet

12.0 Company or Product Inquiries

For more information about AMI Semiconductor, our technologies and our products, visit our Web site at: http://www.amis.com 16 AMI Semiconductor – Jan. 07, M-20557-002 www.amis.com Devices sold by AMIS are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMIS makes no warranty, express, statutory, implied or by description, regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. AMIS makes no warranty of merchantability or fitness for any purposes. AMIS reserves the right to discontinue production and change specifications and prices at any time and without notice. AMI Semiconductor's products are intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recommended without additional processing by AMIS for such applications. Copyright ©2007 AMI Semiconductor, Inc.