AMIS-30600

AMIS-30600 AMI | Alldatasheet

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Technical content

AMIS-30600 LIN Transceiver Data Sheet

1.0 Key Features

• LIN compliant to specification rev. 1.3 and rev. 2.0
• I2T high voltage technology
• Bus voltage ± 40V
• Transmission rate up to 20 kBaud
• SOIC-150-8 Package Protection
• Thermal shutdown
• Indefinite short circuit protection to supply and ground
• Load dump protection (45V) Power Saving
• Operating voltage = 4.75 to 5.25V
• Power down supply current < 50µA EMS Compatibility
• Integrated filter and hysteresis for receiver EMI Compatibility
• Integrated slope control for transmitter
• Slope control dependant from Vbat to enable maximum capacitive-load

2.0 General Description

The single-wire transceiver AMIS-30600 is a monolithic integrated circuit in a SOIC-8 package. It works as an interface between the protocol controller and the physical bus. The AMIS-30600 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can be used in standard ISO9141 systems. In order to reduce the current consumption the AMIS-30600 offers a stand-by mode. A wake-up caused by a message on the bus pulls the INH-output high until the device is switched to normal operation mode. The transceiver is implemented in I2T100 technology enabling both high-voltage analog circuitry and digital functionality to co-exist on the same chip. The AMIS-306 00 pr ovides an ultra-s afe s olution to to day’s automotive i n-vehicle networking (IVN) re quirements by providing unlimited short circuit protection in the event of a fault condition.

3.0 Ordering Information

Table 1: Ordering Code Marketing Name Package Temp. Range AMIS30600AGA SOIC 150 8 150 4 -40°C… 125°C AMI Semiconductor – Rev. 2.0, Apr. 2005 1 www.amis.com

AMIS-30600 LIN Transceiver Data Sheet 4. 0 B l ock D i agr a m LIN AMIS-30600 GND RxD VBB INH State Wake-up Control Thermal shutdown VCC PC20050113.3 TxD VCC COMP Slope Control Filter EN 30 kΩ 10 kΩ40 kΩ Figure 1: Block Diagram

5.0 Typical Application

5.1 A pplication Schematic

PC20050113.5 AMIS- 30600 LIN GND RxD TxD VCC LIN controller VBAT IN OUT VCC Master Node 1 nF 1 kΩ EN GND 5V-reg VBB INH GND 100 nF AMIS- 30600 LIN GND RxD TxD VCC LIN controller VBAT IN OUT VCC Slave Node EN GND 5V-reg VBB INH GND 100 nF KL30 KL31 LIN-BUS 10 µF10 µF Figure 2: Application Diagram AMI Semiconductor – Rev. 2.0, Apr. 2005 2 www.amis.com

AMIS-30600 LIN Transceiver Data Sheet

5.2 Pin Description

5.2.1 Pin Out (top view)

PC20041204.3 Figure 3: Pin Configuration

5.2.2 Pin Description

Table 2: Pinout Pin Name Description

1 RxD Receive data output; low in dominant state

2 EN Enable input; transceiver in normal operation mode when high

3 VCC 5V supply input

4 TxD Transmit data input; low in dominant state; internal 40 KΩ pull-up

5 GND Ground

6 LIN LIN bus output/input; low in dominant state; internal 30 KΩ pull-up

7 VBB Battery supply input

8 INH Inhibit output; to control a voltage regulator; becomes high when wake-up via LIN bus occurs

5.3 A pplication Information

EN Æ Low EN Æ High EN Æ High (Vcc Æ On) Power-up Wake-up t > twake PC20050113.1 Stand-By Mode EN INH Vcc Low High On Figure 4: State Diagram AMI Semiconductor – Rev. 2.0, Apr. 2005 3 www.amis.com

AMIS-30600 LIN Transceiver Data Sheet For fail safe reaso ns the AMIS-3060 0 alr eady h as an i nternal pul l up resistor of 30k Ω impleme nted. T o achieve the requ ired timings for the dominant to recessive transition of the bus sign al an additional external termination resistor of 1kΩ is required. It is recommended to place this re sistor in the master node. To avoid reverse currents from the bus l ine into the battery supply line in case of an unpowered node, it is recomme nded to pl ace a diode in series to the e xternal pull up. For small s ystems (lo w b us capacitance) the EMC perfor mance of the system is supported by an additional capacitor of at least 1n F in the master node (se e Figure 2, Typical Application Diagram). The AMIS-30600 has a slope which depends of the supply Vbat. This implementation guarantees biggest slope-time under all load conditions. The rising slope has to be slower then the external RC-time-constant, otherwise the slope will be terminated by the RC- time-constant and no longer by the internal slope-control. This would effect the s ymmetry of th e bus-signal and would limit the maximum allowed bus-speed. A capacitor of 10µF at the supply voltage input VB buffers the input voltage. In combination with the required reverse polarity diode this prevents the device from detecting power down conditions in case of negative transients on the supply line. In order to reduce the current consumption, the AMIS-30600 offers a sleep operation mode. This mode is selected by switching the enable input EN low (see Figure 4, State Diagram). In the sleep m ode a vo ltage regulator can be controlled via the INH out put in ord er to minimize the current consumption of the whole a pplication. A wake-up cause d b y a message o n the co mmunication b us a utomatically enables the vo ltage regu lator by switching the INH output high. In case the voltage regulator control input is not connected to INH o utput or the micro- controller is active respectively, the AMIS-30600 can be set in normal operation mode without a wake-up via the communication bus. 6. 0 E l ec tr ic al C h ar ac ter i s t i c s

6.1 Absolute Maximum Ratings

Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Table 4: Absolute Maximum Ratings Symbol Parameter Conditions Min. Max. Unit VCC Supply voltage -0.3 +7 V VBB Battery supply voltage -0.3 +40 V VLIN DC voltage at pin LIN 0 < VCC < 5.50V; note 1 -40 +40 V VINH DC voltage at pin INH 0 < VCC < 5.50V -0.3 VBB + 0.3 V VTxD DC voltage at pin TxD 0 < VCC < 5.50V -0.3 VCC + 0.3 V VRxD DC voltage at pin RxD 0 < VCC < 5.50V -0.3 VCC + 0.3 V VEN DC voltage at pin EN 0 < VCC < 5.50V -0.3 VCC + 0.3 V Vesd(LIN) Electrostatic discharge voltage at LIN pin Note 2 -4 +4 kV Vesd Electrostatic discharge voltage at all other pins Note 2 -4 +4 kV Vtran(LIN) Transient voltage at pin LIN Note 3 -150 +150 V Vtran(VBB) Transient voltage at pin VBB Note 4 -150 +150 V Tamb Ambient temperature -40 +150 °C Notes: 1. 80V version available, contact sales for details. 2. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2. 3. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3” capacitive coupled test pulses 1 (-100V), 2 (+100V), 3a (-150V), and 3b (+150V). See Figure 8. 4. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3” direct coupled test pulses 1 (-100V), 2 (+75V), 3a (-150V), 3b (+150V), and 5 (+80V). See Figure 8. AMI Semiconductor – Rev. 2.0, Apr. 2005 4 www.amis.com

AMIS-30600 LIN Transceiver Data Sheet

6.2 Op erating Range

Table 5: Operating Range Symbol Parameter Min. Typ. Max. Unit VCC Supply voltage 4.75 +5.25 V VBB Battery supply voltage 7.3 +18 V Tjunc Maximum junction temperature -40 +150 °C Tjsd Thermal shutdown temperature +150 +170 +190 °C Rthj-a Thermal resistance junction to ambient 185 °C/W

6.3 DC Electrical Characteristics

VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise. All voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Table 6: DC Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit Supply (pin VCC and pin VBB) ICC 5V supply current Dominant; VTxD =0V Recessive; VTxD =VCC 400 250 700 500 µA µA IBB Battery supply current Dominant; VTxD =0V Recessive; VTxD =VCC 100 1.5 200 mA µA IBB Battery supply current Sleep mode; VINH = 0V 35 55 µA ICC 5V supply current Sleep mode; VINH = 0V 0.25 1 µA Transmitter Data Input (pin TxD) VIH High-level input voltage Output recessive 0.7 x VCC - VCC V VIL Low-level input voltage Output dominant 0 - 0.3 x VCC V RTxD,pu Pull-up resistor to Vcc 24 60 kΩ Receiver Data Output (pin RxD) VOH High-level output voltage IRXD = -10mA 0.8 x VCC VCC V VOL Low-level output voltage IRXD = 5mA 0 0.2 x VCC V Enable Input (pin EN) VEN,on High-level input voltage Normal mode 0.7 x VCC - VCC V VEN,off Low-level input voltage Low power mode 0 - 0.3 x VCC V REN,pd Pull-down resistor to GND 6 10 15 kΩ Inhibit Output (pin INH) VINH,d High-level voltage drop: VINH,d = VBB - VINH IINH = - 0.15mA 0.5 1.0 V IINH,lk Leakage current Sleep mode; VINH = 0V -5.0 - 5.0 µA Bus Line (pin LIN) Vbus,rec Recessive bus voltage at pin LIN VTxD =VCC 0.9 x VBB - VBB V Vbus,dom Dominant output voltage at pin LIN VTxD = 0V VTxD = 0V; Ibus = 40mA 0 - 0.15 x VBB 1.4 V V Ibus,sc Bus short circuit current Vbus,short = 18V 40 85 130 mA Ibus,lk Bus leakage current VCC=VBB=0V; Vbus=8V VCC=VBB=0V; Vbus=20V -400 -200 20 µA Rbus Bus pull-up resistance VTxD = 0V 20 30 47 kΩ Vbus,rd Receiver threshold: recessive to dominant 0.4 x VBB 0.48 x VBB 0.6 x VBB V Vbus,dr Receiver threshold: dominant to recessive 0.4 x VBB 0.52 x VBB 0.6 x VBB V Vq Receiver hysteresis Vbus,hys=Vbus,rec-Vbus,dom 0.05 x VBB 0.04 x VBB 0.175 x VBB V VWAKE Wake-up threshold voltage 0.4 x VBB 0.6 x VBB V AMI Semiconductor – Rev. 2.0, Apr. 2005 5 www.amis.com

AMIS-30600 LIN Transceiver Data Sheet

6.4 AC Electrical Characteristics

VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise. Load for slope definitions (typical loads) = [L1] 1nF 1kΩ / [L2] 6.8nF 600Ω / [L3] 10nF 500Ω. Table 7: AC Characteristics According to LIN V1.3 Symbol Parameter Conditions Min. Typ. Max. Unit Dynamic Transceiver Characteristics According to LIN v1.3 t _slope_F Slope time falling edge See Figure 6 4 - 24 µs t _slope_R Slope time rising edge See Figure 6 4 - 24 µs t _slope _Sym Slope time symmetry t _slope_F - t _slope_R -8 - +8 µs T_rec_F Propagation delay Bus dominant to RxD = low; note 1 See Figure 5, 6 2 6 µs T_rec_R Propagation delay Bus recessive to RxD = high; note 1 See Figure 5, 6 2 6 µs tWAKE Wake-up delay time 30 100 200 µs Notes: 1. Not measured on ATE. VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise. Load for slope definitions (typical loads) = [L1] 1nF 1kΩ / [L2] 6.8nF 600Ω / [L3] 10nF 500Ω. Table 8: AC Characteristics According to LIN V2.0 Symbol Parameter Conditions Min. Typ. Max. Unit Dynamic Receiver Characteristics according to LIN v2.0 trx_pdr Propagation delay bus dominant to RxD = low; note 1 See Figure 7 6 µs trx_pdf Propagation delay Bus recessive to RxD = high; note 1 See Figure 7 6 µs trx_sym Symmetry of receiver propagation delay trx_pdr - trx_pdf -2 - +2 µs Dynamic Transmitter Characteristics according to LIN v2.0 D1 Duty cycle 1 = tBus_rec(min)/(2 x tBit); See Figure 7 THRec(max)= 0.744 x Vbat; THDom(max)= 0.581 x Vbat; Vbat = 7.0V ... 18V; tBit= 50µs 0.396 0.5 D1 Duty cycle 1 = tBus_rec(min)/(2 x tBit); See Figure 7 THRec(max)= 0.744 x Vbat; THDom(max)= 0.581 x Vbat; Vbat = 7.0V; tBit= 50µs; tamb = -40°C 0.366 0.5 D2 Duty cycle 2 = tBus_rec(max)/(2 x tBit); See Figure 7 THRec(min)= 0.284 x Vbat; THDom(min)= 0.422 x Vbat; Vbat = 7.6V ... 18V; tBit= 50µs; 0.5 0.581 Notes: 1. Not measured on ATE. AMI Semiconductor – Rev. 2.0, Apr. 2005 6 www.amis.com

AMIS-30600 LIN Transceiver Data Sheet

7.0 Package Outline

SOIC-8: Plastic small outline; 8 leads; body width 150 mil; JEDEC: MS-012. AMIS reference: SOIC150 8 150 G

AMIS-30600 LIN Transceiver Data Sheet

8.0 Soldering

8.1 Introduction to Soldering Surface Mount Packages

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in the AMIS “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used.

8.2 Re-flo w Soldering

Re-flow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed- circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical re-flow peak temperatures range from 215 to 250°C. The top-surface temperature of the packages should preferably be kept below 230°C.

8.3 W ave Soldering

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double- wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e): o Larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; o Smaller than 1.27mm, the footprint longitudinal axis must be parallel to the transport direction of the printed- circuit board. The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45º angle to the transport direction of the printed- circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is four seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

8.4 Ma nual Soldering

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300°C. When using a dedicated tool, all other leads can be soldered in one operation within two to five seconds between 270 and 320°C. Table 9: Soldering Process Soldering Method Package Wave Reflow(1) BGA, SQFP Not suitable Suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS Not suitable (2) Suitable PLCC (3) , SO, SOJ Suitable Suitable LQFP, QFP, TQFP Not recommended (3)(4) Suitable SSOP, TSSOP, VSO Not recommended (5) Suitable Notes: 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods.” 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5mm.

AMIS-30600 LIN Transceiver Data Sheet

9.0 Company or Pr oduct Inquiries

For more information about AMI Semiconductor, our technology and our product, visit our website at: http://www.amis.com North America Tel: +1.208.233.4690 Fax: +1.208.234.6795 Europe Devices sold by AMIS are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMIS makes no warranty, express, statutory, implied or b y description, regarding the in formation set forth herein or regarding the freedom of the described dev ices from patent infringement. AMIS makes no warranty of merchantability or fitness for any purposes. AMIS re serves the right to discontinue production and change specifications and prices at any time and w ithout n otice. AM I Semi conductor's products are in tended for use in commercial applica tions. App lications requiri ng extended tempera ture range , unusual e nvironmental requ irements, or high reliab ility applic ations, s uch as mili tary, medic al li fe-support or lif e-sustaining eq uipment, are specifically not recommended without additional processing by AMIS for such applications. Copyright ©2005 AMI Semiconductor, Inc.