AM9044 AMD | Alldatasheet

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DISTINCTIVE CHARACTERISTICS © Low operating and standby power ‘© High output drive —-4.0 mA sink curent @ 0.4 V © Access times down to 200 ns © TTL identical interface logic levels, © Amo044 is a direct plug-in replacement for 4044 eee GENERAL DESCRIPTION ‘The Am9044/Am@0L44 Series are high-performance, stat- Data readout is not destructive and the same polarity as ic, N-Channel, read/write, random-access memories orga- data input. CS provides for easy selection of an individual rized 98 4096 x 1. Operation is from a single 5 V supply, package when the outputs are OR-tied. The outputs of ‘and all input/output levels are identical to standard TTL 4.0 mA Am9044 provide increased short-circuit current for specifications. A Low-power version is available with power improved drive. savings of about 30%. a BLOCK DIAGRAM 2a] —* vee «De — 2 ano i = MEMORY ARRAY 7 4 ROWS Ms —s 4 COLUMNS A re “he ms wo RE REER ‘80000001 il ms EF # leave Date: January 1900 419

a PRODUCT SELECTOR GUIDE a [Speed heiesig pe | [mem || me |e |e a a [ew sre [ico fe | 3p ST CONNECTION DIAGRAM Top View DIPs aponess o[] 1° wD vec aporess 3] 4 15 [[) ADDRESS 8 aporess« (7) 5 14D) aooress 9 ApORESS 5 [|] 6 13 [7] ADoRESs 10 ‘WRIYEENAELE [} 8 1 Djoataw vss (9 10 [7 GaP SELECT Note: Pin 1 is marked for orientation. er METALLIZATION AND PAD LAYOUT [Cesta erat] Reece a a a ee Ae 6 ~~ ee a Ta “ eo Die Size 0,137” x 0.167" a 4-20 ‘Am9044/Am90L 44

ORDERING INFORMATION

‘AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by @ combination of: a. Device Number b. Speed Option (if applicable) ¢. Package Type ©. Temperature Range @. Optional Processing Blank = Standard processing 8 = Bunin 4. TEMPERATURE RANGE (C= Commercial (0 to + 70°C) ©. PACKAGE TYPE P= 18-Pin Plastic DIP (PD 018) D = 18-Pin Ceramic DIP (CD 018) 'b. SPEED OPTION B= 450 ns C= 300 ne D=250 ns E=200 ne '&. DEVICE NUMBER/DESCRIPTION ‘AmO044/AmBOLAA | 4008 x1 Static RAM 4K x1 SRAM ‘AMGOLAA = Low-Powor Version | ameous | [Aweoaes | | Ameouc | [Ameo | Pc, pce, Valid Combinations [awoosap |] 06, oc8 Valid Combinations list configurations planned to be [_awso.esD | supported in volume for this device. Consult the local AMD [~aweowe | sales office to confirm availability of specific valid [Aino] combinations, to check on newly released combinations, and to obtain additional data on AMD's standard military grade products. PIN DESCRIPTION Ao-A11 Address inputs (Inputs) Dy Data In (Input) ‘The address input lines select the memory location from This pin is used to enter data during write operations. which to read or write. Dout Data Out (Output, Three-State) TS _ Chip Select (input, Active LOW) ‘The content of the selected memory location is presented ‘The CS line selects the memory device for active operation. on the Data Output line during read operations (CS LOW, we Wiis Eras input, Active LOW) WE HIGH). The line goes three-state during write ‘When both CS and WE are LOW, data on the input ines is operations, vwaitten to the location presented on the address input lines. Vcc Power Supply Ves Ground ‘Am9044/Am90L44 421

ABSOLUTE MAXIMUM RATINGS (Note 1) OPERATING RANGES (Note 2) All Signal Voltage with Operating ranges define those limits between which the The products described by this specification include intemal accumulations of static charge. It is suggested nevertheless, that conventional precautions be observed during storage, handling and use in order to avoid exposure to excessive voltages. DC CHARACTERISTICS over operating ranges unless otherwise specified (Group A, Subgroups 1, 2, 3 are tested unless otherwise noted) Parameter Description Test Conditions [em [omemoncmen [esas [meme [io Tm [ta | Copa towowen —varoav tare a ma [vn [treat war vorage PC 20 | eo A [ix [iret ont Curent Masog [cz [omni cnn [Sigesaae [neve | -o | | | Vgo= Mex [Sra Caves || 70_| [= | Cowrna Sorry Cert Ean Taree [ovens Tso Toot Frequency = 10 wit [a | Not | Abs Mesure Rigs wr ond fr wer gaolnes and are not ei 2 Aer eg Caron person snort npetre defn sete iano case amporae. 3. FearSanasens ssame worl waren tvs o Tomson. in terete lost 1.8 Vand eat ang of he speci itn Dos 100 of er 3 BF er Tex, Toro, Tor ad Two. ‘4. The internal write time of the memory is defined by the overtap of TS LOW and WE LOW. Both signals must be LOW to initiate a write and ‘either signal can terminate a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal fe erent ote, 5. The specified address access time will be valid only when TS is LOW soon enough for tc to elapse. & Tastee we ri s00% Tse bt ae vl at il charac da tee dosn & ma where hase pares ayo atte 1. Panoton i aesued fom 15 Von the input to (VoH=800 mV) and (Vo. mV) on he Op ig C= 5 BF 4-22 ‘Am9044/AM90L44

a SWITCHING CHARACTERISTICS over operating ranges unless otherwise specified (for APL Products, Group A, Subgroups 9, 10, 11 are tested unless otherwise noted) (Notes 3-6) parameter [ © devices | ¢ Devices | 0 Devices | & eviews | READ CYCLE Cl. aee=== Tel Tel Tel fel (Read Cycle Time) ‘Addross Valid to Data Out Vaid Delay (Address| La ‘Access Time) [3 [too | Grp Seloct LOW to Date Out vais votes) | [too [ [oo [Te [fo [| [4 [tex [Ge Select LOW to Date On On Wow sy [vo [fw [ [iw [ [oo [| [S| toro | Grip Select HIGH to Data Ou OF Wore 7) [ [oo [| oo [ [eo ff wo {| [s [tom [ouput noid ame ater accross change [20 [ [2 | yo J fe TT | WRITE CYCLE [= fee ToT Tl (Write Cycle Time) [e[ ™ femensimears fe [ fm | fo | fmt [| Enable HIGH Time (Note 4) OO aa OO Time ‘Write Enable LOW to Data Out Ot De [e[ om [aap meno [fo | fot fel [el | [11 | tow | Oeta in vatd to Wite Enable HIGH Time [00 | [iso [| ro [foo fT [| on [remrreownnree [oT Tot tet tel [el Time [13 | taw | Adcross vais to Wite Enable OwTme [0 [ [oe [fe [fo fy | [| [exswarmenm's | [| fm] fm] | Enable HIGH Time (Note 4) (Note 6. 7) ‘Notes: See notes following DC Characteristics table. Amso44/AmS0L44 4-23

a SWITCHING WAVEFORMS KEY TO SWITCHING WAVEFORMS ~vom mune — oi Bas Sea TWH = ec Frere fmt Stowe aren ot Boeswor UNE uae ‘KS000010. a oe [eaemetieceeees A nee : i a | le Lewal - eB | SRE SRO BS | ae tn | Pa ee mp ~e oar our RY care BR — BY oxcse BN RY x PRY iat PX) id ‘icone — Li ‘teoess) — rb weoo0191 Notes: See notes following DC Characteristics table. a 4-24 ‘Amm9044/Am90L44

TYPICAL PERFORMANCE CURVES Normalized Supily Current Versus: Normalized Access Time Versus Normalized Access Time Versus ‘Supply Voltage ‘Supply Voltage Output Loading [weaeT TT TT fase TT Ty “_ pe ey wo wot +4 3am tt ee on CZ . A ate an wo SCC Chee van ia peed TT sale TT ase} + rrrr try ee tT ee ees eo Vit tity | Coot) HR HH Tas ee eT? ha eT ee ee) a er ry Yoo o Yoo CAPACITANCE LOAD - pF re ovwone sme Normalized Access Time Versus Normalized Supply Current Versus ‘Ambient Temperature Ambient Temperature: set4H 4 “Tete? T1111 gat tt tt SEE 0 Oe “TT eT I 4S ee SOCAL “EEL HEE ‘Ta — AMONENT TEMPERATURE — °C Ta ~ AMOUNT TEMPERATURE — °C Am9044/Am90L44 4-25