AM50DL128BH AMD | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 68
Technical content
/G45/G88/G79/G92/G3/G21/G19/G19/G22 /G55/G75/G72/G3/G73/G82/G79/G79/G82/G90/G76/G81/G74/G3/G71/G82/G70/G88/G80/G72/G81/G87/G3/G86/G83/G72/G70/G76/G73/G76/G72/G86/G3/G54/G83/G68/G81/G86/G76/G82/G81/G3/G80/G72/G80/G82/G85/G92/G3/G83/G85/G82/G71/G88/G70/G87/G86/G3/G87/G75/G68/G87/G3/G68/G85/G72/G3/G81/G82/G90/G3/G82/G73/G73/G72/G85/G72/G71/G3/G69/G92/G3/G69/G82/G87/G75/G3/G36/G71/G89/G68/G81/G70/G72/G71 /G48/G76/G70/G85/G82/G3/G39/G72/G89/G76/G70/G72/G86/G3/G68/G81/G71/G3/G41/G88/G77/G76/G87/G86/G88/G17/G3/G36/G79/G87/G75/G82/G88/G74/G75/G3/G87/G75/G72/G3/G71/G82/G70/G88/G80/G72/G81/G87/G3/G76/G86/G3/G80/G68/G85/G78/G72/G71/G3/G90/G76/G87/G75/G3/G87/G75/G72/G3/G81/G68/G80/G72/G3/G82/G73/G3/G87/G75/G72/G3/G70/G82/G80/G83/G68/G81/G92/G3/G87/G75/G68/G87/G3/G82/G85/G76/G74/G16 /G76/G81/G68/G79/G79/G92/G3/G71/G72/G89/G72/G79/G82/G83/G72/G71/G3/G87/G75/G72/G3/G86/G83/G72/G70/G76/G73/G76/G70/G68/G87/G76/G82/G81/G15/G3/G87/G75/G72/G86/G72/G3/G83/G85/G82/G71/G88/G70/G87/G86/G3/G90/G76/G79/G79/G3/G69/G72/G3/G82/G73/G73/G72/G85/G72/G71/G3/G87/G82/G3/G70/G88/G86/G87/G82/G80/G72/G85/G86/G3/G82/G73/G3/G69/G82/G87/G75/G3/G36/G48/G39/G3/G68/G81/G71 /G41/G88/G77/G76/G87/G86/G88/G17 Continuity of Specifications /G55/G75/G72/G85/G72/G3/G76/G86/G3/G81/G82/G3/G70/G75/G68/G81/G74/G72/G3/G87/G82/G3/G87/G75/G76/G86/G3/G71/G68/G87/G68/G86/G75/G72/G72/G87/G3/G68/G86/G3/G68/G3/G85/G72/G86/G88/G79/G87/G3/G82/G73/G3/G82/G73/G73/G72/G85/G76/G81/G74/G3/G87/G75/G72/G3/G71/G72/G89/G76/G70/G72/G3/G68/G86/G3/G68/G3/G54/G83/G68/G81/G86/G76/G82/G81/G3/G83/G85/G82/G71/G88/G70/G87/G17/G3/G3/G36/G81/G92 /G70/G75/G68/G81/G74/G72/G86/G3/G87/G75/G68/G87/G3/G75/G68/G89/G72/G3/G69/G72/G72/G81/G3/G80/G68/G71/G72/G3/G68/G85/G72/G3/G87/G75/G72/G3/G85/G72/G86/G88/G79/G87/G3/G82/G73/G3/G81/G82/G85/G80/G68/G79/G3/G71/G68/G87/G68/G86/G75/G72/G72/G87/G3/G76/G80/G83/G85/G82/G89/G72/G80/G72/G81/G87/G3/G68/G81/G71/G3/G68/G85/G72/G3/G81/G82/G87/G72/G71/G3/G76/G81/G3/G87/G75/G72 /G71/G82/G70/G88/G80/G72/G81/G87/G3/G85/G72/G89/G76/G86/G76/G82/G81/G3/G86/G88/G80/G80/G68/G85/G92/G15/G3/G90/G75/G72/G85/G72/G3/G86/G88/G83/G83/G82/G85/G87/G72/G71/G17/G3/G3/G41/G88/G87/G88/G85/G72/G3/G85/G82/G88/G87/G76/G81/G72/G3/G85/G72/G89/G76/G86/G76/G82/G81/G86/G3/G90/G76/G79/G79/G3/G82/G70/G70/G88/G85/G3/G90/G75/G72/G81/G3/G68/G83/G83/G85/G82/G83/G85/G76/G68/G87/G72/G15 /G68/G81/G71/G3/G70/G75/G68/G81/G74/G72/G86/G3/G90/G76/G79/G79/G3/G69/G72/G3/G81/G82/G87/G72/G71/G3/G76/G81/G3/G68/G3/G85/G72/G89/G76/G86/G76/G82/G81/G3/G86/G88/G80/G80/G68/G85/G92/G17 Continuity of Ordering Part Numbers /G36/G48/G39/G3/G68/G81/G71/G3/G41/G88/G77/G76/G87/G86/G88/G3/G70/G82/G81/G87/G76/G81/G88/G72/G3/G87/G82/G3/G86/G88/G83/G83/G82/G85/G87/G3/G72/G91/G76/G86/G87/G76/G81/G74/G3/G83/G68/G85/G87/G3/G81/G88/G80/G69/G72/G85/G86/G3/G69/G72/G74/G76/G81/G81/G76/G81/G74/G3/G90/G76/G87/G75/G3/G179/G36/G80/G180/G3/G68/G81/G71/G3/G179/G48/G37/G48/G180/G17/G3/G55/G82/G3/G82/G85/G71/G72/G85 /G87/G75/G72/G86/G72/G3/G83/G85/G82/G71/G88/G70/G87/G86/G15/G3/G83/G79/G72/G68/G86/G72/G3/G88/G86/G72/G3/G82/G81/G79/G92/G3/G87/G75/G72/G3/G50/G85/G71/G72/G85/G76/G81/G74/G3/G51/G68/G85/G87/G3/G49/G88/G80/G69/G72/G85/G86/G3/G79/G76/G86/G87/G72/G71/G3/G76/G81/G3/G87/G75/G76/G86/G3/G71/G82/G70/G88/G80/G72/G81/G87/G17 For More Information /G51/G79/G72/G68/G86/G72/G3/G70/G82/G81/G87/G68/G70/G87/G3/G92/G82/G88/G85/G3/G79/G82/G70/G68/G79/G3/G36/G48/G39/G3/G82/G85/G3/G41/G88/G77/G76/G87/G86/G88/G3/G86/G68/G79/G72/G86/G3/G82/G73/G73/G76/G70/G72/G3/G73/G82/G85/G3/G68/G71/G71/G76/G87/G76/G82/G81/G68/G79/G3/G76/G81/G73/G82/G85/G80/G68/G87/G76/G82/G81/G3/G68/G69/G82/G88/G87/G3/G54/G83/G68/G81/G86/G76/G82/G81 /G80/G72/G80/G82/G85/G92/G3/G86/G82/G79/G88/G87/G76/G82/G81/G86/G17 Am50DL128BH Data Sheet Publication Number 30773 Revision A Amendment +1 Issue Date October 7, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 30773 Rev: A Amendment/+1 Issue Date: October 7, 2003 Refer to AMD’s Website (www.amd.com) for the latest information. Am50DL128BH Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Two Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 32 Mbit (2 M x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS MCP Features ■ Power supply voltage of 2.7 to 3.3 volt ■ High performance — Access time as fast as 55 ns ■ Package — 73-Ball FBGA ■ Operating Temperature — –40°C to +85°C Flash Memory Features ARCHITECTURAL ADVANTAGES ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations ■ Flexible Bank™ architecture — Read may occur in any of the three banks not being written or erased. — Four banks may be grouped by customer to achieve desired bank divisions. ■ Manufactured on 0.13 µm process technology ■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data — Customer lockable: Sector is one-time programmable. Once sector is locked, data cannot be changed. ■ Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. ■ Boot sectors — Top and bottom boot sectors in the same device ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard PERFORMANCE CHARACTERISTICS ■ High performance — Access time as fast as 55 ns — Program time: 4 µs/word typical utilizing Accelerate function ■ Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode ■ Minimum 1 million erase cycles guaranteed per sector ■ 20 year data retention at 125°C — Reliable operation for the life of the system SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations ■ Supports Common Flash Memory Interface (CFI) ■ Program/Erase Suspend/Erase Resume — Suspends program/erase operations to allow programming/erasing in same bank ■ Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES ■ Any combination of sectors can be erased ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to the read mode ■ WP#/ACC input pin — Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status — Acceleration (ACC) function accelerates program timing ■ Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system pSRAM Features ■ Power dissipation — Operating: 40 mA maximum — Standby: 70 µA maximum — Deep power-down standby: 5 µA ■ CE1s# and CE2s Chip Select ■ Power down features using CE1s# and CE2s ■ Data retention supply voltage: 2.7 to 3.3 volt ■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8) ■ 8-word page mode access
2 Am50DL128BH October 7, 2003
The Am29DL640H is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt V CC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 55, 70 or 85 ns and is offered in a 73-ball FBGA package. Standard control pins—chip enable (CE#f), write en- able (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power sup- ply for both read and write functions. Internally gener- ated and regulated voltages are provided for the program and erase operations. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks, two 8 Mb banks with small and large sectors, and two 24 Mb banks of large sectors only. Sector addresses are fixed, system software can be used to form user-defined bank groups. During an Erase/Program operation, any of the three non-busy banks may be read from. Note that only two banks can operate simultaneously. The device can im- prove overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. The Am29DL640H can be organized as both a top and bottom boot sector configuration. The SecSi™ (Secured Silicon) Sector is an extra 256 byte sector capable of being permanently locked by AMD or customers. The SecSi Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been customer locked, permanently set to 0 if the part has been factory locked, and is 0 if customer lockable. This way, customer lockable parts can never be used to replace a factory locked part. Factory locked parts provide several options. The SecSi Sector may store a secure, random 16 byte ESN (Electronic Serial Number), customer code (pro- grammed through AMD’s ExpressFlash service), or both. Customer Lockable parts may utilize the SecSi Sector as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This is an advantage compared to systems where user-written software must keep track of the old data location, status, logical to physical translation of the data onto the Flash memory device (or memory de- vices), and more. Using DMS, user-written software does not need to interface with the Flash memory di- rectly. Instead, the user's software accesses the Flash memory by calling one of only six functions. AMD pro- vides this software to simplify system design and soft- ware integration efforts. The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard . Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device sta- tus bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to the read mode. The sector erase architecture allows memory sec- tors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low V CC detector that automatically inhibits write opera- tions during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of mem- ory. This can be achieved in-system or via program- ming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode . The system can also place the device into the standby mode . Power consumption is greatly re- duced in both modes. Bank Megabits Sector Sizes Bank 1 8 Mb Eight 4 Kword, Fifteen 32 Kword Bank 2 24 Mb Forty-eight 32 Kword Bank 3 24 Mb Forty-eight 32 Kword Bank 4 8 Mb Eight 4 Kword, Fifteen 32 Kword
4 Am50DL128BH October 7, 2003
Figure 33. Pseudo SRAM Write Cycle—
October 7, 2003 Am50DL128BH 5 ADVANCE INFORMATION PRODUCT SELECTOR GUIDE MCP BLOCK DIAGRAM Part Number Am50DL128BH Speed Options Standard Voltage Range: VCC = 2.7–3.3 V Flash Memory Pseudo SRAM 56 70 85 56, 70 85 Max Access Time, ns 55 70 85 70 85 Page Access Time (pSRAM), ns N/A N/A N/A 30 35 CE#f Access, ns 55 70 85 70 85 OE# Access, ns 25 30 40 25 30 VSS/VSSQVCCs/VSSQ RESET# WE# OE# CE1#s LB#s UB#s CE#f1 WP#/ACC CE2s
32 MBit
64 MBit
#2 DQ15/A-1 to DQ0 DQ15/A-1 to DQ0 RY/BY VSSVCCf CE#f2 DQ15/A-1 to DQ0 VSSVCCf RY/BY# A-1 CIOf A21 to A0 DQ15/A-1 to D
6 Am50DL128BH October 7, 2003
FLASH MEMORY BLOCK DIAGRAM VCC VSS Bank 1 Address Bank 2 Address A21–A0 RESET# WE# CE# BYTE# DQ15–DQ0 WP#/ACC STATE CONTROL COMMAND REGISTER RY/BY# Bank 1 X-Decoder OE# BYTE# DQ15–DQ0 Status Control A21–A0 A21–A0 A21–A0A0–A21 DQ15–DQ0 DQ15–DQ0 DQ15–DQ0 DQ15–DQ0 Mux Mux Mux Bank 2 X-Decoder Y-gate Bank 3 X-Decoder Bank 4 X-Decoder Y-gate Bank 3 Address Bank 4 Address
October 7, 2003 Am50DL128BH 7 ADVANCE INFORMATION CONNECTION DIAGRAM Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (BGA). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150 °C for prolonged periods of time. A10 B10 F10 G10 L10 M10 NC NC NC NC NC NC NCNC NC CE#f1 CE1#s V SS OE# DQ0 DQ8 LB# UB# A18 A17 DQ1 DQ9 DQ10 DQ2 NC WP#/ACC RESET# RY/BY# DQ3 V CCf DQ11 NC WE# CE2s A20 DQ4 VCCs NC A19 A10 DQ6 DQ13 DQ12 DQ5 A11 A12 A13 A14 NC DQ15/A-1 DQ7 DQ14 A15 A21 CE2#f A16 CIOf V SS NC NC NC NC NC NC Pseudo SRAM only Flash 1, 2 and Pseudo SRAM shared Flash 1 and 2 shared Flash 1 only Flash 2 only 73-Ball FBGA Top View
8 Am50DL128BH October 7, 2003
A20–A0 = 21 Address Inputs (Common) A21, A-1 = 2 Address Inputs (Flash) DQ15–DQ0 = 16 Data Inputs/Outputs (Common) CE#f1 = Chip Enable 1 (Flash 1) CE#f2 = Chip Enable 2 (Flash 2) CE#1s = Chip Enable 1 (pSRAM) CE2s = Chip Enable 2 (pSRAM) OE# = Output Enable (Common) WE# = Write Enable (Common) RY/BY# = Ready/Busy Output UB#s = Upper Byte Control (pSRAM) LB#s = Lower Byte Control (pSRAM) CIOf = I/O Configuration (Flash) CIOf = VIH = Word mode (x16), CIOf = VIL = Byte mode (x8) RESET# = Hardware Reset Pin, Active Low WP#/ACC = Hardware Write Protect/ Acceleration Pin (Flash) VCCf = Flash 3.0 volt-only single power sup- ply (see Product Selector Guide for speed options and voltage supply tolerances) V CCs = pSRAM Power Supply VSS = Device Ground (Common) NC = Pin Not Connected Internally LOGIC SYMBOL 16 or 8 DQ15–DQ0 A20–A0 CE#f1 OE# WE# RESET# UB#s RY/BY# WP#/ACC SA A21, A-1 LB#s CIOf CE#1s CE2s CE#f2
October 7, 2003 Am50DL128BH 9 ADVANCE INFORMATION
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following: Valid Combinations Valid Combinations list configurations planned to be supported in vol- ume for this device. Consult the local AMD or Fujitsu sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am50DL128 B H 70 I T TAPE AND REEL T = 7 inches S = 13 inches TEMPERATURE RANGE I = Industrial (–40 °C to +85°C) SPEED OPTION See “Product Selector Guide” on page 5. PROCESS TECHNOLOGY H = 0.13 µm PSEUDO SRAM DEVICE DENSITY B = 32 Mbits AMD DEVICE NUMBER/DESCRIPTION Am50DL128BH Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Two Am29DL640H 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2 M x 16-Bit) Pseudo Static RAM with Page Mode Valid Combinations Order Number Package Marking Am50DL128BH56I T,S M50000004J Am50DL128BH70I T, S M50000004K Am50DL128BH85I T, S M50000004L
10 Am50DL128BH October 7, 2003
This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory loca- tion. The register is a latch used to store the com- mands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Tables 1-2 lists the device bus operations, the inputs and control levels they require, and the result- ing output. The following subsections describe each of these operations in further detail.
Table 1. Device Bus Operations—Flash Word Mode, CIOf = V IH
- Other operations except for those indicated in this column are
- Do not apply CE#f1 or 2 = V IL, CE1#s = VIL and CE2s = VIH at the
- Active flash is device being addressed.
- Don’t care or open LB#s or UB#s.
- If WP#/ACC = V IL , the boot sectors will be protected. If WP#/ACC
= VIH the boot sectors protection will be removed.
- The sector protect and sector unprotect functions may also be
Block Protection and Unprotection” section.
- If WP#/ACC = V IL, the two outermost boot sectors remain
- Data will be retained in pSRAM.
- Data will be lost in pSRAM.
- CE# inputs on both flash devices may be held low for this operation.
Inactive CE1#s CE2s OE# WE# Addr.
0.3 V H High-Z High-Z
12 Am50DL128BH October 7, 2003
Table 2. Device Bus Operations—F lash Byte Mode, CIOf = VIL
- Other operations except for those indicated in this column are
- Do not apply CE#f = V IL, CE1#s = VIL and CE2s = VIH at the same
- Active flash is device being addressed.
- Don’t care or open LB#s or UB#s.
- If WP#/ACC = V IL , the boot sectors will be protected. If WP#/ACC
= VIH the boot sectors protection will be removed.
- The sector protect and sector unprotect functions may also be
Block Protection and Unprotection” section.
- Data will be retained in pSRAM.
- Data will be lost in pSRAM.
- CE# inputs on both flash devices may be held low for this
0.3 V HH X X X X X VCC ±
0.3 V HL X X X X X VCC ±
October 7, 2003 Am50DL128BH 13 ADVANCE INFORMATION FLASH DEVICE BUS OPERATIONS Word/Byte Configuration The CIOf pin controls whether the device data I/O pins operate in the byte or word configuration. If the CIOf pin is set at logic ‘1’, the device is in word configura- tion, DQ15–DQ0 are active and controlled by CE#f and OE#. If the CIOf pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ7–DQ0 are active and controlled by CE#f and OE#. The data I/O pins DQ14–DQ8 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE#f and OE# pins to V IL. CE#f is the power control and selects the device. OE# is the output con- trol and gates array data to the output pins. WE# should remain at V IH . The CIOf pin determines whether the device outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No com- mand is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. Refer to the Flash Read-Only Operations table for tim- ing specifications and to Figure 15 for the timing dia- gram. I CC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which in- cludes programming data to the device and erasing sectors of memory), the system must drive WE# and CE#f to V IL, and OE# to VIH. For program operations, the CIOf pin determines whether the device accepts program data in bytes or words. Refer to “Flash Device Bus Operations” for more information. The device features an Unlock Bypass mode to facil- itate faster programming. Once a bank enters the Un- lock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The “Byte/Word Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command se- quences. An erase operation can erase one sector, multiple sec- tors, or the entire device. Table 3 indicates the address space that each sector occupies. Similarly, a “sector address” is the address bits required to uniquely select a sector. The “Flash Command Definitions” section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. The device address space is divided into four banks. A “bank address” is the address bits required to uniquely select a bank. I CC2 in the DC Characteristics table represents the ac- tive current specification for the write mode. The Flash AC Characteristics section contains timing specifica- tion tables and timing diagrams for write operations. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is prima- rily intended to allow faster manufacturing throughput at the factory. If the system asserts V HH on this pin, the device auto- matically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing V HH from the WP#/ACC pin returns the device to nor- mal operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated pro- gramming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or uncon- nected; inconsistent behavior of the device may result . See “Write Protect (WP#)” on page 19 for related in- formation. Autoselect Functions If the system writes the autoselect command se- quence, the device enters the autoselect mode. The system can then read autoselect codes from the inter- nal register (which is separate from the memory array) on DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to the Sector/Sector Block Protection and Unprotection and Autoselect Command Se- quence sections for more information. Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be sus- pended to read from or program to another location within the same bank (except the sector being erased). Figure 22 shows how read and write cycles
14 Am50DL128BH October 7, 2003
may be initiated for simultaneous operation with zero latency. ICC6f and ICC7f in the table represent the cur- rent specifications for read-while-program and read-while-erase, respectively. Standby Mode When the system is not reading or writing to the de- vice, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE#f and RESET# pins are both held at V CC ± 0.3 V. (Note that this is a more restricted voltage range than V IH .) If CE#f and RESET# are held at V IH, but not within V CC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The de- vice requires standard access time (t CE) for read ac- cess when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or program- ming, the device draws active current until the operation is completed. I CC3f in the table represents the standby current spec- ification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device en- ergy consumption. The device automatically enables this mode when addresses remain stable for t ACC + 30 ns. The automatic sleep mode is independent of the CE#f, WE#, and OE# control signals. Standard ad- dress access timings provide new data when ad- dresses are changed. While in sleep mode, output data is latched and always available to the system. I CC5f in the table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of re- setting the device to reading array data. When the RE- SET# pin is driven low for at least a period of t RP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state ma- chine to reading array data. The operation that was in- terrupted should be reinitiated once the device is ready to accept another command sequence, to en- sure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at V SS±0.3 V, the device draws CMOS standby current (I CC4 f). If RESET# is held at V IL but not within V SS±0.3 V, the standby cur- rent will be greater. The RESET# pin may be tied to the system reset cir- cuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firm- ware from the Flash memory. If RESET# is asserted during a program or erase op- eration, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of t READY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not ex- ecuting (RY/BY# pin is “1”), the reset operation is com- pleted within a time of t READY (not during Embedded Algorithms). The system can read data t RH after the RESET# pin returns to VIH. Refer to the pSRAM AC Characteristics tables for RE- SET# parameters and to Figure 16 for the timing dia- gram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state.
Table 3. Am29DL640H Sector Architecture
16 Am50DL128BH October 7, 2003
Table 3. Am29DL640H Sector Architecture (Continued)
18 Am50DL128BH October 7, 2003
Note: The address range is A21:A-1 in byte mode (CIOf=V IL) or A21:A0 in word mode (CIOf=V IH). Table 4. Bank Address Table 5. SecSi ™ Sector Addresses
Table 6. Am29DL640H Boot Sector/Sector Block the temporary sector unprotect function is available. See “Temporary Sector Unprotect”. The device is shipped with all sectors unprotected. AMD representative for details. Protection and Unprotection section for details. one of two provided by the WP#/ACC pin.
20 Am50DL128BH October 7, 2003
Block Protection and Unprotection”. Table 7. WP#/ACC Modes Figure 26 shows the timing diagrams, for this feature. Figure 1. Temporary Sector Unprotect Operation Enables accelerated progamming (ACC).
- All protected sectors unprotected (If WP#/ACC = V IL,
sectors 0, 1, 140, and 141 will remain protected).
- All previously protected sectors are protected once
Figure 2. In-System Sector Protect/Unprotect Algorithms
22 Am50DL128BH October 7, 2003
SecSi™ (Secured Silicon) Sector Flash Memory Region The SecSi (Secured Silicon) Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The SecSi Sector is 256 bytes in length, and uses a SecSi Sector Indicator Bit (DQ7) to indicate whether or not the SecSi Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the secu- rity of the ESN once the product is shipped to the field. AMD offers the device with the SecSi Sector either factory locked or customer lockable. The fac- tory-locked version is always protected when shipped from the factory, and has the SecSi (Secured Silicon) Sector Indicator Bit permanently set to a “1.” The cus- tomer-lockable version is shipped with the SecSi Sec- tor unprotected, allowing customers to utilize the that sector in any manner they choose. The customer-lock- able version has the SecSi (Secured Silicon) Sector Indicator Bit permanently set to a “0.” Thus, the SecSi Sector Indicator Bit prevents customer-lockable de- vices from being used to replace devices that are fac- tory locked. The system accesses the SecSi Sector Secure through a command sequence (see “Enter SecSi™ Sector/Exit SecSi Sector Command Sequence”). After the system has written the Enter SecSi Sector com- mand sequence, it may read the SecSi Sector by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit SecSi Sector command se- quence, or until power is removed from the device. On power-up, or following a hardware reset, the device re- verts to sending commands to the first 256 bytes of Sector 0. Factory Locked: SecSi Sector Programmed and Protected At the Factory In a factory locked device, the SecSi Sector is pro- tected when the device is shipped from the factory. The SecSi Sector cannot be modified in any way. The device is preprogrammed with both a random number and a secure ESN. The 8-word random number will at addresses 000000h–000007h in word mode (or 000000h–00000Fh in byte mode). The secure ESN will be programmed in the next 8 words at addresses 000008h–00000Fh (or 000010h–000019h in byte mode). The device is available preprogrammed with one of the following: ■ A random, secure ESN only ■ Customer code through the ExpressFlash service ■ Both a random, secure ESN and customer code through the ExpressFlash service. Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service. AMD programs the customer’s code, with or without the ran- dom ESN. The devices are then shipped from AMD’s factory with the SecSi Sector permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Customer Lockable: SecSi Sector NOT Programmed or Protected At the Factory If the security feature is not required, the SecSi Sector can be treated as an additional Flash memory space. The SecSi Sector can be read any number of times, but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the SecSi Sector. The SecSi Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, ex- cept that RESET# may be at either V IH or VID. This allows in-system protection of the SecSi Sector Re- gion without raising any device pin to a high voltage. Note that this method is only applicable to the SecSi Sector. ■ To verify the protect/unprotect status of the SecSi Sector, follow the algorithm shown in Figure 3. Once the SecSi Sector is locked and verified, the sys- tem must write the Exit SecSi Sector Region com- mand sequence to return to reading and writing the remainder of the array. The SecSi Sector lock must be used with caution since, once locked, there is no procedure available for unlocking the SecSi Sector area and none of the bits in the SecSi Sector memory space can be modified in any way.
Figure 3. SecSi Sector Protect Verify and power-down transitions, or from system noise. or WE# do not initiate a write cycle. cally reset to the read mode on power-up. interfaces for long-term compatibility.
24 Am50DL128BH October 7, 2003
Table 8. CFI Query Id entification String Table 9. System Interface String
Table 10. Device Geometry Definition
26 Am50DL128BH October 7, 2003
Table 11. Primary Vendor-Specific Extended Query
October 7, 2003 Am50DL128BH 27 ADVANCE INFORMATION FLASH COMMAND DEFINITIONS Writing specific address and data commands or se- quences into the command register initiates device op- erations. Table 12 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#f, whichever happens later. All data is latched on the rising edge of WE# or CE#f, whichever hap- pens first. Refer to the pSRAM AC Characteristics section for timing diagrams. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-sus- pend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an ad- dress within erase-suspended sectors, the device out- puts status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same excep- tion. See the Erase Suspend/Erase Resume Com- mands section for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase opera- tion, or if the bank is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the section for more information. The Flash Read-Only Operations table provides the read parameters, and Figure 15 shows the timing diagram. Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the se- quence cycles in an erase command sequence before erasing begins. This resets the bank to which the sys- tem was writing to the read mode. Once erasure be- gins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-sus- pend-read mode. Once programming begins, how- ever, the device ignores reset commands until the operation is complete. The reset command may be written between the se- quence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Sus- pend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erase-suspend-read mode if that bank was in Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively pro- gramming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the au- toselect command. The bank then enters the autose- lect mode. The system may read any number of autoselect codes without reinitiating the command se- quence. Table 12 shows the address and data requirements. To determine sector protection information, the system must write to the appropriate bank address (BA) and sector address (SADD). Table 3 shows the address range and bank number associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). Enter SecSi™ Sector/Exit SecSi Sector Command Sequence The SecSi Sector region provides a secured data area containing a random, sixteen-byte electronic serial number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi
28 Am50DL128BH October 7, 2003
Sector command sequence. The device continues to access the SecSi Sector region until the system is- sues the four-cycle Exit SecSi Sector command se- quence. The Exit SecSi Sector command sequence returns the device to normal operation. The SecSi Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table 12 shows the address and data requirements for both command sequences. See also “SecSi™ (Se- cured Silicon) Sector Flash Memory Region” for further information. Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the CIOf pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cy- cles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the pro- grammed cell margin. Table 12 shows the address and data requirements for the byte program command sequence. Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a program opera- tion is in progress. When the Embedded Program algorithm is complete, that bank then returns to the read mode and ad- dresses are no longer latched. The system can deter- mine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the Flash Write Oper- ation Status section for information on these status bits. Any commands written to the device during the Em- bedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was success- ful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Unlock Bypass Command Sequence The unlock bypass feature allows the system to pro- gram bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass pro- gram command, A0h; the second cycle contains the program address and data. Additional data is pro- grammed in the same manner. This mode dispenses with the initial two unlock cycles required in the stan- dard program command sequence, resulting in faster total programming time. Table 12 shows the require- ments for the command sequence. During the unlock bypass mode, only the Unlock By- pass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset com- mand sequence. The first cycle must contain the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns to the read mode. The device offers accelerated program operations through the WP#/ACC pin. When the system asserts V HH on the WP#/ACC pin, the device automatically en- ters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at V HH any operation other than accelerated programming, or device dam- age may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 4 illustrates the algorithm for the program oper- ation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 19 for timing diagrams.
30 Am50DL128BH October 7, 2003
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. information on these status bits. reading array data, to ensure data integrity. and Figure 21 section for timing diagrams. period during the sector erase command sequence. writing the Erase suspend command. if a sector is actively erasing or is erase-suspended. information on these status bits. just as in the standard Byte Program operation. pend mode, and is ready for another valid operation. pended bank is required when writing this command. Further writes of the Resume command are ignored. the chip has resumed erasing. Figure 5. Erase Operation
- See Table 12 for erase command sequence.
- See the section on DQ3 for information on the sector
Table 12. Am29DL640H Command Definitions RA = Address of the memory location to be read. RD = Data read from location RA during read operation. edge of WE# or CE#f pulse, whichever happens first. Table 3 for information on sector addresses. bank. Refer to Table 4 for information on sector addresses.
- See Tables 1–2 for description of bus operations.
- All values are in hexadecimal.
- Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
- Data bits DQ15–DQ8 are don’t care in command sequences,
- Unless otherwise noted, address bits A21–A12 are don’t cares for
unlock and command cycles, unless SADD or PA is required.
- No unlock or command cycles required when bank is reading
- The Reset command is required to return to the read mode (or to
the bank is providing status information).
- The fourth cycle of the autoselect command sequence is a read
Autoselect Command Sequence section for more information.
- The device ID must be read across the fourth, fifth, and sixth
- The data is 80h for factory locked, 40h for customer locked and
- The data is 00h for an unprotected sector/sector block and 01h
for a protected sector/sector block.
- The Unlock Bypass command is required prior to the Unlock
- The Unlock Bypass Reset command is required to return to the
read mode when the bank is in the unlock bypass mode.
- The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode. operation, and requires the bank address.
- The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
- Command is valid when device is ready to read array data or when
device is in autoselect mode.
32 Am50DL128BH October 7, 2003
WE# pulse in the command sequence. Suspend mode, Data# Polling produces a “1” on DQ7. sector, the status may not be valid. byte mode) will appear on successive read cycles. Table 13 shows the outputs for Data# Polling on DQ7. Data# Polling timing diagram. Figure 6. Data# Polling Algorithm
- VA = Valid address for programming. During a sector
valid address is any non-protected sector address.
- DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
34 Am50DL128BH October 7, 2003
DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indi- cates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for era- sure. (The system may use either OE# or CE#f to con- trol the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-sus- pended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for era- sure. Thus, both status bits are required for sector and mode information. Refer to Table 13 to compare out- puts for DQ2 and DQ6. Figure 7 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 24 shows the toggle bit timing diagram. Figure 25 shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Figure 7 for the following discussion. When- ever the system initially begins reading toggle bit sta- tus, it must read DQ15–DQ0 (or DQ7–DQ0 for byte mode) at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the pro- gram or erase operation. The system can read array data on DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the sys- tem also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is tog- gling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the de- vice did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cy- cles, determining the status as described in the previ- ous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to de- termine the status of the operation (top of Figure 7). DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously pro- grammed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previ- ously in the erase-suspend-program mode). DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase com- mand. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between addi- tional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all fur- ther commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the sys- tem software should check the status of DQ3 prior to and following each subsequent sector erase com- mand. If DQ3 is high on the second status check, the last command might not have been accepted. Table 13 shows the status of DQ3 relative to the other status bits.
Table 13. Write Operation Status
- DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
- DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
- When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
36 Am50DL128BH October 7, 2003
- Minimum DC voltage on input or I/O pins is –0.5 V.
SS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is V CC +0.5 V.
- Minimum DC input voltage on pins RESET#, and
overshoot to +12.0 V for periods up to 20 ns.
- No more than one output may be shorted to ground at a
operational sections of this data sheet is not implied. conditions for extended periods may affect device reliability. Figure 8. Maximum Negative Figure 9. Maximum Positive functionality of the device is guaranteed.
October 7, 2003 Am50DL128BH 37 ADVANCE INFORMATION ESD IMMUNITY Spansion Flash memory Multi-Chip Products (MCPs) may contain component devices that are developed by FASL LLC ("Spansion components") and component devices that are developed by a third party ("third-party components") Spansion components are tested and guaranteed to the ESD immunity levels listed in the corresponding Spansion Flash memory Qualification Database. Third-party components are neither tested nor guaran- teed by FASL LLC for ESD immunity. However, ESD test results for third-party components may be avail- able from the component manufacturer. Component manufacturer contact information is listed in the Span- sion MCP Qualification Report, when available. The Spansion Flash memory Qualification Database and Spansion MCP Qualification Report are available from AMD and Fujitsu sales offices.
38 Am50DL128BH October 7, 2003
Notes: 1. The I CC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum I CC specifications are tested with VCC = VCCmax. 3. I CC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 5. Not 100% tested. 6. CE#f refers to chip enable input of active flash (device being addressed). 7. Typical and maximum current specifications shown are for each flash device. FLASH DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min Typ Max Unit ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ±1.0 µA ILIT RESET# Input Load Current V CC = VCC max; RESET# = 12.5 V 35 µA ILR Reset Leakage Current V CC = VCC max; RESET# = 12.5 V 35 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max ±1.0 µA ILIA ACC Input Leakage Current VCC = VCC max, WP#/ACC = VACC max 35 µA ICC1f Flash VCC Active Read Current (Notes 1, 2) CE#f = VIL, OE# = VIH, Byte Mode
5 MHz 10 16
1 MHz 2 4
CE#f = VIL, OE# = VIH, Word Mode ICC2f Flash VCC Active Write Current (Notes 2, 3) CE#f = V IL, OE# = VIH, WE# = VIL 15 30 mA ICC3f Flash VCC Standby Current (Notes 2, 7) VCCf = VCC max, CE#f, RESET#, WP#/ACC = VCCf ± 0.3 V 0.2 5 µA ICC4f Flash VCC Reset Current (Notes 2, 7) VCCf = VCC max, RESET# = VSS ± 0.3 V, WP#/ACC = VCCf ± 0.3 V 0.2 5 µA ICC5f Flash VCC Current Automatic Sleep Mode (Notes 2, 4, 7) VCCf = VCC max, VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V 0.2 5 µA ICC6f Flash VCC Active Read-While-Program Current (Notes 1, 2) CE#f = VIL, OE# = VIH Byte 21 45 mA Word 21 45 ICC7f Flash VCC Active Read-While-Erase Current (Notes 1, 2) CE#f = VIL, OE# = VIH Byte 21 45 mA Word 21 45 ICC8f Flash VCC Active Program-While-Erase-Suspended Current (Notes 2, 5) CE#f = VIL, OE#f = VIH 17 35 mA VIL Input Low Voltage –0.2 0.8 V VIH Input High Voltage 2.4 VCC + 0.2 V VHH Voltage for WP#/ACC Program Acceleration and Sector Protection/Unprotection 8.5 9.5 V V ID Voltage for Sector Protection, Autoselect and Temporary Sector Unprotect 11.5 12.5 V VOL Output Low Voltage I OL = 4.0 mA, VCCf = VCCs = VCC min 0.45 V VOH1 Output High Voltage IOH = –2.0 mA, VCCf = VCCs = VCC min 0.85 x VCC V VOH2 IOH = –100 µA, VCC = VCC min VCC–0.4 VLKO Flash Low VCC Lock-Out Voltage (Note 5) 2.0 2.5 V
October 7, 2003 Am50DL128BH 39 ADVANCE INFORMATION pSRAM DC & OPERATING CHARACTERISTICS Notes: 1. V CC – 1.0 V for a 10 ns pulse width. 2. V CC + 1.0 V for a 10 ns pulse width. Parameter Symbol Parameter Description Test Conditions Min Typ Max Unit ILI Input Leakage Current V IN = VSS to VCC –1.0 1.0 µA ILO Output Leakage Current CE1#s = VIH, CE2s = VIL or OE# = VIH or WE# = VIL, VIO= VSS to VCC –1.0 1.0 µA ICC1s Operating Current Cycle time = Min., IIO = 0 mA, 100% duty, CE1#s = VIL, CE2s = VIH, VIN = VIL = or VIH, tRC = Min. 40 mA ICC2s Page Access Operating Current Cycle time = Min., IIO = 0 mA, 100% duty, CE1#s = VIL, CE2s = VIH, VIN = VIL = or VIH, tPC = Min. 25 mA VOL Output Low Voltage I OL = 1.0 mA 0.4 V VOH Output High Voltage I OH = –0.5 mA 2 V ISB Standby Current (CMOS) CE#1 = V CCS – 0.2 V, CE2 = VCCS – 0.2 V 70 µA IDSB Deep Power-down Standby CE2 = 0.2 V 5 µA VIL Input Low Voltage –0.3 (Note 1) 0.4 V VIH Input High Voltage 2.4 VCC + 0.3 (Note 2) V
40 Am50DL128BH October 7, 2003
Figure 10. I CC1 Current vs. Time (Showing Active and Automatic Sleep Currents) Figure 11. Typical I CC1 vs. Frequency
42 Am50DL128BH October 7, 2003
CE#s Timing Figure 14. Timing Diagram for Alternating
Description
Test Setup All Speeds Unit JEDEC Std —t CCR CE#s Recover Time — Min 0 ns CE#f tCCR tCCR CE1#s CE2s tCCR tCCR
- See Figure 12 and Table 14 for test specifications
- Measurements performed by placing a 50 Ω termination on the data pin with a bias of V CC/2. The time from OE# high to the
0 VRY/BY#
Figure 15. Read Operation Timings
44 Am50DL128BH October 7, 2003
Figure 16. Reset Timings
46 Am50DL128BH October 7, 2003
Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. Parameter Speed JEDEC Std Description 56 70 85 Unit tAVAV tWC Write Cycle Time (Note 1) Min 55 70 85 ns tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time Min 30 40 45 ns tAHT Address Hold Time From CE#f or OE# high during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 30 40 45 ns tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time (CE#f to WE#) Min 0 ns tELWL tCS CE#f Setup Time Min 0 ns tEHWH tWH WE# Hold Time (CE#f to WE#) Min 0 ns tWHEH tCH CE#f Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 25 30 35 ns tWHDL tWPH Write Pulse Width High Min 30 ns tSR/W Latency Between Read and Write Operations Min 0 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 5 µs Word Typ 7 tWHWH1 tWHWH1 Accelerated Programming Operation, Word or Byte (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Max 90 ns
48 Am50DL128BH October 7, 2003
- SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”.
- These waveforms are for the word mode.
Figure 21. Chip/Sector Erase Operation Timings
50 Am50DL128BH October 7, 2003
read cycle, and array data read cycle. Figure 24. Toggle Bit Timings (During Embedded Algorithms) Figure 25. DQ2 vs. DQ6
Figure 26. Temporary Sector Unprotect Timing Diagram
52 Am50DL128BH October 7, 2003
- For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0, SADD = Sector Address.
Figure 27. Sector/Sector Block Protect and
October 7, 2003 Am50DL128BH 53 ADVANCE INFORMATION FLASH AC CHARACTERISTICS Alternate CE#f Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. Parameter Speed JEDEC Std Description 56 70 85 Unit tAVAV tWC Write Cycle Time (Note 1) Min 55 70 85 ns tAVWL tAS Address Setup Time Min 0 ns tELAX tAH A d d r e s s H o l d T i m e M i n 3 04 04 5n s tDVEH tDS Data Setup Time Min 30 40 45 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE#f Pulse Width Min 25 40 45 ns tEHEL tCPH CE#f Pulse Width High Min 25 30 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Byte Typ 5 µs Word Typ 7 tWHWH1 tWHWH1 Accelerated Programming Operation, Word or Byte (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec
54 Am50DL128BH October 7, 2003
- Figure indicates last two bus cycles of a program or erase operation.
- PA = program address, SADD = sector address, PD = program data.
- DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
- Waveforms are for the word mode.
Figure 28. Flash Alternate CE#f Controll ed Write (Erase/Program) Operation Timings
- t OD, tODo, tBD, and tODW are defined as the time at which
not referenced to output voltage levels.
- If CE#, LB#, or UB# goes low at the same time or before
WE# goes high, the outputs will remain at high impedance.
- If CE#, LB#, or UB# goes low at the same time or after WE#
goes low, the outputs will remain at high impedance. Figure 29. Psuedo SRAM Read Cycle
56 Am50DL128BH October 7, 2003
Figure 30. Page Read Timing
- t OD, tODo, tBD, and tODW are defined as the time at which
not referenced to output voltage levels.
- If CE#, LB#, or UB# goes low at the same time or before
WE# goes high, the outputs will remain at high impedance.
- If CE#, LB#, or UB# goes low at the same time or after WE#
goes low, the outputs will remain at high impedance.
- If the device is using the I/Os to output data, input signals of reverse polarity must not be applied.
- If OE# is high during the write cycle, the outputs will remain at high impedance.
- If CE#1ps, LB# or UB# goes low at the same time or after WE# goes low, the outputs will remain at high impedance.
- If CE#1ps, LB# or UB# goes high at the same time or before WE# goes high, the outputs will remain at high impedance.
Figure 31. Pseudo SRAM Write Cycle—WE# Control
58 Am50DL128BH October 7, 2003
- If the device is using the I/Os to output data, input signals of reverse polarity must not be applied.
- If OE# is high during the write cycle, the outputs will remain at high impedance.
Figure 32. Pseudo SRAM Write Cycle—CE#1ps Control
- If the device is using the I/Os to output data, input signals of reverse polarity must not be applied.
- If OE# is high during the write cycle, the outputs will remain at high impedance.
60 Am50DL128BH October 7, 2003
FLASH ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 12 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. PACKAGE PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions T A = 25°C, f = 1.0 MHz. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.4 5 sec Excludes 00h programming prior to erasure (Note 4)Chip Erase Time 56 sec Byte Program Time 5 150 µs Excludes system level overhead (Note 5) Accelerated Byte/Word Program Time 4 120 µs Accelerated Chip Programming Time 10 30 sec Word Program Time 7 210 µs Chip Program Time (Note 3) Byte Mode 42 126 sec Word Mode 28 84 Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V V CC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance V IN = 0 11 14 pF COUT Output Capacitance V OUT = 0 12 16 pF CIN2 Control Pin Capacitance V IN = 0 14 16 pF CIN3 WP#/ACC Pin Capacitance V IN = 0 17 20 pF
October 7, 2003 Am50DL128BH 61 ADVANCE INFORMATION FLASH DATA RETENTION Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150°C1 0 Y e a r s 125°C2 0 Y e a r s
62 Am50DL128BH October 7, 2003
- Typical values are not 100% tested.
Figure 34. Deep Power-down Timing Note: Data cannot be retained during deep power-down standby mode. Figure 35. Power-on Timing
64 Am50DL128BH October 7, 2003
FTA073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm 3159\\38.14b N/A 11.60 mm x 8.00 mm PACKAGE FTA 073 NOM. --- --- --- 1.40 --- 1.11 MAX. 8.00 BSC. 11.60 BSC. --- MIN. 1.00 0.25 8.80 BSC. 7.20 BSC. 0.35 0.40
0.40 BSC
A2,A3,A4,A5,A6,A7,A8,A9 B2,B3,B4,B7,B8,B9,C2,C9,C10 D1,D10,E1,E10,F5,F6,G5,G6 H1,H10,J1,J10,K1,K2,K9,K10 L2,L3,L4,L7,L8,L9 M2,M3,M4,M5,M6,M7,M8,M9 0.30
0.80 BSC
D JEDEC PACKAGE SYMBOL A MD E n NOTE DEPOPULATED SOLDER BALL MATRIX SIZE E DIRECTION MATRIX FOOTPRINT BALL PITCH
0.80 BSC BALL PITCH
NOTES: 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. 4. e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 9. N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTION OR OTHER MEANS. bO INDEX MARK 73X C0.15 (2X) (2X) C0.15 B A b 0.20 C C 0.15 C CABM 0.08 M D E PIN A1 C TOP VIEW SIDE VIEW CORNER A 0.08 BOTTOM VIEW LM eD CORNER 7SE ABDCEFHG JK eE SD PIN A17
October 7, 2003 Am50DL128BH 65 ADVANCE INFORMATION REVISION SUMMARY Revision A (September 23, 2003) Initial release. Revision A+1 (October 7, 2003) ESD Added ESD Disclaimer. Trademarks Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are regi stered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification pur poses only and may be trademarks of their respective companies .