AM2168

AM2168 AMD | Alldatasheet

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4096 X 4 Static R/W Random-Access Memory Devices

DISTINCTIVE CHARACTERISTICS © High speed — access times as fast as 40 ns © Standard 20-pin, .300 inch dualindine package © Fully static storage and interface circuitry © Standard 20-pin'rectangular ceramic leadiess chip © No clocks or timing signals required carrer ® Automatic power down when deselected (Am2168) @ High output drive © Power dissipation ~ Up to seven standard TTL loads or six Schottky TTL = Am2168: 660 mW active, 165 mW standby loads Am2169: 660 mW © TTL-compatible interface levels GENERAL DESCRIPTION The Am2168 and Am2169 are high-performance, static, N- The Am2168 remains in a low-power standby mode as long channel, read/write, random-access memories organized as CE remains HIGH, thus reducing its power requirements as 4096 words of 4 bits. Operation is from a single 5 V from 660 mW to 165 mW maximum. ‘supply, and all input/output levels are identical to standard TIL specifications. The Am2168 and Am2169 are the same Me dala read out is not destructive and has the same polarity as the input data. The device is packaged in either except that the Am2168 offers an automatic Chip Enable ‘a .300 slim DIP or 20-pin leadiess chip carrier. The outputs (CE) power-down feature of similar devices can be OP-tied and easy selection obtained by use of the CE. BLOCK DIAGRAM * ‘ADoRESS: A ——| suerens sronsoe warm n fs x now waa | ea Na] oecooene. = fa = TT Ld GUFFERS: _ | ane | Ag | coum 8 occas rammaoen | T TT TT TI i. 4 we veo ——— on —— er 80006210 PRODUCT SELECTOR GUIDE [Part Number [ Am2ee-3 | Am21ee-45 | amzve0-40 | Am2tee-s5 | Am2160-50 | Am2ee-70 | Am2160-70 | [ Maximum Access Time (nay[ 95 [4s [ao [ss To ToT [cc may [120 [zo [zo [zo ao Tie to [isa (maj go [go TA [goa oN [tccimay [NA [eo [WA [io te0 tote [ise (may [NA 90 NA soa soa] “Am2168 Flashrte a wadomark ot Advanced Miro Devices inc Sakai Be Amanda Inoue Dale: January 1900

a CONNECTION DIAGRAMS Top View DIPs tec ze ez ie [1 Yoo(+5 Awnada aq p% pO a DJs wCtn ad [) Az acd Ba iv my vlan ac HA ads wih a [J v0, A Le +5 [h vo, aof [} voz a D7 «Cho, an [Ws » De sv aq [-] v4 ow HN ono 1) We AAA (Cd008282 Note: Pin 1 is marked for orientation. it in ta mat fo tation, METALLIZATION AND PAD LAYOUT [xternat_[_ttorat_| . [Da fos | a | St | . [| 1 [| | [a | A | | Die Size: 0.123° x 0.252"

472 Am2168/Am2169

ORDERING INFORMATION

‘Standard Products ‘AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of: a. Devies Number b. Speed Option (if applicable) ¢. Package Type 4. Temperature Range ©. Optional Processing [eno more Blank = Standard Processing B= Bunn 4. TEMPERATURE RANGE = Commercial (0 to +70°C) . PACKAGE TYPE P= 20-Pin Plastic DIP (PD 020) 20m Goran DIP (CO 020) Sip cane ney nee b. SPEED OPTION 35~35 ns 40-40 ns 45 = 45 1. 50=50 ns 55=55 ns 70=70 ns ‘&. DEVICE NUMBER/DESCRIPTION ‘Am2168/Am2160 4096 x4 Static F/W Random Access Memory la [Amaree-05 TP, Pca, 0c, a [ Awaieeas | [-aneresss | Vallé Combinations Po, Pca, OC, DCB Valid Combinations list configurations planned to be ‘supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid ‘combinations, to check on newly released combinations, and to obtain additional data on AMD's standard military grade products. EE Am2168/AM2169 473

a MILITARY ORDERING INFORMATION APL. Products ‘AMD products for Aerospace and Defense applications are available in several packages and operating ranges. APL (Approved Products List) products are fuily compliant with MIL-STD-B83C requirements. The order number (Valid Combination) {s formed by @ combination of: a. Device Number b. Speed Option (if applicable) ¢. Device Class d. Package Type ©. Load Finieh —_—_ C=Gold °° 1. PACKAGE TYPE 20h Ceram DP (CD 020) eens Gey ¢. DEVICE CLASS: /B = Class B b. SPEED OPTION 50= 50 ne 55=S5 ns 70=70 re 45-45 ne ‘8. DEVICE NUMBER/DESCRIPTION ‘Am2168/Am2169

40084 Static R/W Random Access Memory

[_amaree-as [amareeas Valid Combinations [_amaieoso | Valid Combinations list configurations planned to be [awetee70——*d supported in volume for this device. Consult the local AMD [mere] sales office to confirm availability of specific valid [nrreeas | (aA, (BUA combinations or to check for newly released valid | ~avareoss combinations | Amare0-c0 | Group A Teste [-Amaies.70 | a GO A ee oo ee PIN DESCRIPTION Ag-A11 Address inputs (inputs) V0;-1/04 Data in/Out Bus (Bidirectional Active “The address input lines select the RAM location to be read HIGH) oF written. ‘These 1/0 fines provide the path for data to be read from or TE Thip Enable (input, Active Low) written to the selected memory location. “The Chip Enable selects the memory device. Vee WE Wilts Enable (input, Active LOW) When Write Enable is LOW and Chip Enable is also LOW. Vg Ground data is written into the location specified on the address pins. ee

47 Am2168/Am2169

a ABSOLUTE MAXIMUM RATINGS* OPERATING RANGES (Note 4) DC Output Current ..csssssciissssssseeseseeesesneeese 0 MA Supply Voltage (VOC) -o-vcoceevnnnennnn4 5 V tO +55 V Power Dissipation Miitary (M) Devices ‘Ambient Temperature with Power Applied Supply Voltage (VCC) --.-.----:0cceeee $45 tO +5.5 V genie Packages PACKAGES nsv-vn- 85 10 + 125°° Operating ranges define those limits between which the onenteesoesunneeennesenee ating anges me ian ‘Storage Temperature ‘functionality device is gquarant Stresses above those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. *Maximum ratings are for system design reference; Parameters given may not be 100% tested. DC CHARACTERISTICS over operating ranges unless otherwise specified (for APL Products, Group A, Subgroups 1, 2, 3 are tested unless otherwise noted) (Note 4) Am2168-55 &-70 ‘Am2168-35, | Am2169-50 Parameter Parameter 4-0 4-70 Symbol _| __Deseripion Test Conations | win, [wa | wn. [ was. | [ton [ouput HGH Curent [Von=2av [vocwasv [a Tf -« [| ma | ouput LOW Curent | Vo, =04 V [oor fe Te TT foL = 0. [wm Tet CC [vu prea tow vonage [Noes ———SSSCS~d sf cn [os ow |v [x [rot toed Omron [ondevieveg SSSC*d tO = vO | | Output Leakage GND <Vo <Voo yA Current Output Disabled Test Frequency = 1.0 MHz [ [sf fs | Input/Output Ta= 25°C, All Pins at 0 V, Voc=5 V v0 | Capacitance (Note 5) 7 7 Voc Operating Max Voc. C&<v_ [come | [zo | 20 | Sepoly Curent Output Open Cs BS eae Gown Carer | Max Vo. (CE > Vid | feo] | | i Sp [mwa foe] Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing referencé levels of 1.5 V, input pulse levels of 0 to 3.0 V and output loading of the specified IoL/loH and 30 pF load capacitance. Output timing reference is 1.5 V. 2. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write. 3. Vi_ voltages of less than -0.5 V on the I/O pins will cause the output current to exceed the maximum rating and thus, should not exceed 30 seconds in duration. 4. For test and correlation purposes, ambient temperature is defined as the "Instant-on'’ case temperature. 5. At any given temperature and voltage condition, t}1z is less than t_z and twz is less than tow for all devices. Transition is measured at 1.5 V on the input to Voy ~500 mV and Vo, +500 mV on the outputs using the load shown in 8. under Switching Test Circuits. CL =5 pF. 6. Not 100% tested parameter; parameter guaranteed by characterization. ‘Am2168/Am2169 475

a SWITCHING CHARACTERISTICS over operating ranges unless otherwise specified (for APL Products, Group A, Subgroups 9, 10, 11 are tested unless otherwise noted) (Note 1) ee [= [enema oemen™ [ TT Tet [oT [mt [| efm [sorte oomean| eT Tel Tel fel) [> [ee _| (Chip Enable Access Time) jamie | a a A SE eo el [efre _[ovewmrareomonor fees [ oe [= [om [ola] oto] | Selene oe Pee er et 7 fo [sermrermron Iwowwlem | [=| [el te] fn] =| [Ce feu [crip Enatte LOW to Powertip Dotey JAmaes owes | of [of oT to | [= | [e[e [amen Tet Tel Tot [eT [| [Toe | wie Enable LOW to Wate Era HGH |vae i | oo | Tos [fs [fs | [| [i Tom | Whe Enable HIGH wo Adcrome Do Norcare [| o | {o [ foe [fo | | nw | [iz [me _[wirinamiovwamannz re] e [w [o [we [> Ta [eo fa | m | [slow [en vedo Wa emencn | | | [| fas [fs | To | [te] fom nostime TT Us Pe Ps TY | [is [us| Adtese Vaid wo wees Enbetow | sf o [| fe | fo FP of fo | [re [tow | Cre Erabie LOW to Wine Enatie HGH fiwoie a [oo [ [os [as [Tos | ne | [row _[wmenmnonvomeninz — foerefo | [eT fet Tel Te] [eae | rates Vd endow | oT es Te TT | SWITCHING TEST CIRCUITS te Nec oe swa oura seo sor =f tee 2000 i . *romete “Tcoosi0 A. Output Load B. Output Load for tyz, tLz, tow, twz ee +76 Am2168/AM2169

KEY TO SWITCHING WAVEFORMS ——— wn onnne TW as = was ae = Ee SH poeswor ne son cee Bee cs 000010 a wwe nooness waa ‘on ae 'PREWOUS OATA VALIO DATA VAUD \\WFO21270 Read Cycle No. 1 (WE HIGH, CE LOW) 4 a tne wa murepance WVV pours XXXKK ne) wo “| mi i) — ae . watt = ro cman tee frm wroe 1280 Read Cycle No. 2 (WE HIGH, Address Valid Prior to TE Transition to LOW) a Am2168/Am2169 477

a SWITCHING WAVEFORMS (Cont'd.) we ‘ANN: ome a tw tow DATAWO DATA UNDEFINED HIGH IMPEDANCE. mn at te cnt a nee we VV LILILLTITLLL1 om Write Cycle No. 2 (CE Controlled) Note: If CE goes HIGH simultaneously with WE HIGH, the output remains in @ high-impedance state. a 4-78 ‘Am2168/Am2169

a TYPICAL PERFORMANCE CURVES ‘Supply Current ‘Supply Current Output Source Current versus Supply Voltage ‘versus Ambient Temperature versus Output Voltage i cone moo CEE oe. ee i oo . aaN sce tt soe TT | : N ae a ‘ew ‘0P001980 ue OP001900 ‘ony oPo0z000 NOE $e =peet7o aNk Nueom gM 7 . 71 | NDE] Gi m7 T_T AT TINE job OE so) be SZ a wt | Td = “CLT TI i ZL TT fo ae aac ‘ew ‘OPo02010 “s oPooz020 vor 0P002030 ‘Typical Power-On Current ‘Access Time Change ‘Access Time Change 4 versus Power Supply versus Input Voltage versus Output Loading . . . ee Ae] ETO s.-- CCT :.[ ie + Ptr Poe Pore ee “Ree rete deh woo 64 ° 1 2 3 Gg s ° 1 2 3 4 © 100 200 30 6o BOO Vee-¥ Va-¥ O-F ovran0 crores oven a Am2168/Am2169. 479