ADM-0012-5931SM

ADM-0012-5931SM MARKIMICROWAVE | Alldatasheet

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Technical content

Features

 Optimized for use as a T3 LO buffer amplifier  3rd and 5th Harmonic Generation  Suitable for driving L, M, and I diode mixers  Optional Positive Only Bias or Internal Bias Operation  Broadband 50 Ω Matching  Unconditionally Stable Electrical Specifications - Specifications measured in a 50-Ohm system. Parameter Frequency Min Typ Max (GHz) Input for Saturated Output (dBm) DC to 12.0 +5 +10 +12 Output 1 dB Compression (dBm) +16 Saturated Output Power with negative bias (dBm) +19 Small Signal Gain with negative bias (dB) 11.5 Input Return Loss (dB) 13 Output Return Loss (dB) 14 Noise Figure (dB) 4.5 Third Order Output Intercept Point (dBm) 26 Bias Requirements, Internal (mA) Vd: +10.0 to +12.0 / Vg:-0.25 Volts 85 Bias Requirements, External (mA) Vd: +5.0 to +7.0 / Vg: -0.25 Volts 85 Vd: +5.0 to +7.0 / Vg: 0 Volts 115 Part Number Options Model Number Description ADM-0012-5931SM 1 Surface Mount 3mm QFN EVAL3-ADM-5931 Connectorized Evaluation Fixture 1 Note: For port locations and I/O designations, refer to the drawings on pages 2, 8, 11, and 12 of this document. GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 2 Frequency DC to 12.0 GHz Functional Diagram and Application Circuit – External Positive Bias (Pin 9 Output with Bias Tee) Biasing and Operation RF In / RF Out – Input and output signals should be connected by 50 ohm microstrip or coplanar traces to well matched 50 ohm sources and loads. DC blocking capacitors or bias tees are required. Vg – Negative gate voltage is optional to improve lifetime of the amplifier and reduce current consumption. Harmonic generation is also significantly affected by the negative gate voltage level. The amplifier is designed for optimal performance when the negative gate voltage is tuned such that the positive bias supply is 85 mA. It may be supplied through pin 6 or through the RF input on pin 3. Vd- Bias supply supplied to Vd through pin 9 should be voltage limited below 9 V and current limited below 150 mA at all times. The operational bias voltage should be between 3 V and 7 V for full gain, efficiency, and linearity. In general gain, linearity, and output power will increase marginally with increased voltage from 5 to 7 V. Optional Bias Circuitry – The resistor and capacitor on the Vd and Vg lines (pads 11, 12, and 6) prevent low frequency oscillation. These components are not required in bias circuits with sufficient low frequency loss. Designers should experiment to determine if they are necessary. DC/RF Ground – The ground paddle of the QFN should be connected to a low noise RF and DC ground with very low electrical and thermal resistance for high frequency operation and thermal heat sinking. RF In 0.1 uF Vg

10 Ohms

0.1 uF

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 3 Frequency DC to 12.0 GHz Typical Performance – Positive Only (+3 to +7V) External Bias (Pin 9 Output), Grounded Gate (Pin 6) -10 0 2 4 6 8 10 12 Frequency (GHz) Small Signal Gain (dB) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Saturated Output Power (dBm) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias -70 -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 Frequency (GHz) Reverse Isolation (dB) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias -40 -35 -30 -25 -20 -15 -10 0 2 4 6 8 10 12 Frequency (GHz) Small Signal Return Loss (dB) Input, +7 Volt/-0 Volt Bias Input, +3 Volt/-0 Volt Bias Output, +7 Volt/ -0 Volt Bias Output +3 Volt/-0 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Input IP3 (dBm) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Output IP3 (dBm) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 4 Frequency DC to 12.0 GHz Typical Performance – Positive Only (+3 to +7V) External Bias (Pin 9 Output), Grounded Gate (Pin 6), continued -40 -30 -20 -10 0 2 4 6 8 10 12 Output Frequency (GHz) Even Harmonic Generation (dBm) +10 dBm Input +7 Volt/-0 Volt Bias, Second Harmonic +3 Volt/-0 Volt Bias, Second Harmonic +7 Volt/-0 Volt Bias, Fourth Harmonic +3 Volt/-0 Volt Bias, Fourth Harmonic -40 -30 -20 -10 0 2 4 6 8 10 12 Output Frequency (GHz) Odd Harmonic Generation (dBm) +10 dBm Input +7 Volt/-0 Volt Bias, Third Harmonic +3 Volt/-0 Volt Bias, Third Harmonic +7 Volt/-0 Volt Bias, Fifth Harmonic +3 Volt/-0 Volt Bias, Fifth Harmonic -10 0 2 4 6 8 10 12 Frequency (GHz) Output P1dB (dBm) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias 100 125 150 175 200 225 250 275 300 0 2 4 6 8 10 12 Frequency (GHz) Group Delay (ps) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Noise Figure(dB) +7 Volt/-0 Volt Bias +3 Volt/-0 Volt Bias 100 110 120 130 140 150 2 3 4 5 6 7 8 Vd (V) Current Consumption (mA) with 10 GHz Input Vg= -0V, Pin= -10 dBm Vg= -0V, Pin= +10 dBm

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 5 Frequency DC to 12.0 GHz Typical Performance – +3 to +7V External Bias (Pin 9 Output), -0.25 Negative Bias (Pin 6) BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM -10 0 2 4 6 8 10 12 Frequency (GHz) Small Signal Gain (dB) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias -10 0 2 4 6 8 10 12 Frequency (GHz) Small Signal Gain (dB) over Temperature -55°C, +7 Volt/-0.25 Volt Bias +25°C, +7 Volt/-0.25 Volt Bias +85°C, +7 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Saturated Output Power (dBm) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias -70 -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 Frequency (GHz) Reverse Isolation (dB) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Input IP3 (dBm) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Output IP3 (dBm) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias

Copyright © 2020 Marki Microwave, Inc. | Rev. B Page 6 Frequency DC to 12.0 GHz Typical Performance – +3 to +7V External Bias (Pin 9 Output), -0.25 Negative Bias (Pin 6) continued BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 7 Frequency DC to 12.0 GHz -45 -40 -35 -30 -25 -20 -15 -10 0 2 4 6 8 10 12 Frequency (GHz) Input Small Signal Return Loss (dB) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias -45 -40 -35 -30 -25 -20 -15 -10 0 2 4 6 8 10 12 Frequency (GHz) Input Small Signal Return Loss (dB) over Temperature -55°C, +7 Volt/-0.25 Volt Bias +25°C, +7 Volt/-0.25 Volt Bias +85°C, +7 Volt/-0.25 Volt Bias -45 -40 -35 -30 -25 -20 -15 -10 0 2 4 6 8 10 12 Frequency (GHz) Output Small Signal Return Loss (dB) +7 Volt/ -0.25 Volt… +3 Volt/-0.25 Volt Bias -45 -40 -35 -30 -25 -20 -15 -10 0 2 4 6 8 10 12 Frequency (GHz) Output Small Signal Return Loss (dB) over Temperature -55°C, +7 Volt/-0.25 Volt Bias +25°C, +7 Volt/-0.25 Volt Bias +85°C, +7 Volt/-0.25 Volt Bias -40 -30 -20 -10 0 2 4 6 8 10 12 Output Frequency (GHz) Even Harmonic Generation (dBm) +10 dBm Input +7 Volt/-0.25 Volt Bias, Second Harmonic +3 Volt/-0.25 Volt Bias, Second Harmonic +7 Volt/-0.25 Volt Bias, Fourth Harmonic +3 Volt/-0.25 Volt Bias, Fourth Harmonic -40 -30 -20 -10 0 2 4 6 8 10 12 Output Frequency (GHz) Odd Harmonic Generation (dBm) +10 dBm Input +7 Volt/-0.25 Volt Bias, Third Harmonic +3 Volt/-0.25 Volt Bias, Third Harmonic +7 Volt/-0.25 Volt Bias, Fifth Harmonic +3 Volt/-0.25 Volt Bias, Fifth Harmonic

Copyright © 2020 Marki Microwave, Inc. | Rev. B Typical Performance – +3 to +7V External Bias (Pin 9 Output), -0.25 Negative Bias (Pin 6) continued -10 0 2 4 6 8 10 12 Frequency (GHz) Output P1dB (dBm) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias 100 125 150 175 200 225 250 275 300 0 2 4 6 8 10 12 Frequency (GHz) Group Delay (ps) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Noise Figure(dB) +7 Volt/-0.25 Volt Bias +3 Volt/-0.25 Volt Bias 100 110 120 2 3 4 5 6 7 8 Vd (V) Current Consumption (mA) with 10 GHz Input Vg= -0.25V, Pin= -10 dBm Vg= -0.25V, Pin= +10 dBm

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 8 Frequency DC to 12.0 GHz Functional Diagram and Application Circuit – Internal Positive Bias Tee (Pin 11) Biasing and Operation RF In / RF Out – Input and output signals should be connected by 50 ohm microstrip or coplanar traces to well matched 50 ohm sources and loads. DC blocking capacitors are required. Vg – Recommended bias on this pin is -0.1 to -0.3 Volts. Harmonic generation is significantly affected by the negative gate voltage level. The amplifier is designed for optimal performance when the negative gate voltage is tuned such that the positive bias supply is 85 mA. It may be supplied through pin 6 or through the RF input on pin 3. Vd- Bias supply on Vd through pin 11 should be voltage limited below 13 V and current limited below 150 mA at all times. The operational bias voltage should be between 10 V and 12 V for full gain, efficiency, and linearity. In general gain, linearity, and output power will increase marginally with increased voltage from 10 V to12 V. When the internal positive bias tee is used, pin 12 is left DC and RF open circuited and should not be connected to ground. Optional Bias Circuitry – The resistor and capacitor on the Vd and Vg lines (pads 11, 12, and 6) prevent low frequency oscillation. These components are not required in bias circuits with sufficient low frequency loss. Designers should experiment to determine if they are necessary. DC/RF Ground – The ground paddle of the QFN should be connected to a low noise RF and DC ground with very low electrical and thermal resistance for high frequency operation and thermal heat sinking. RF In 0.1 uF Vg RF Out Vd 0.1 uF

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 9 Frequency DC to 12.0 GHz Typical Performance – +9 to +12V Internal Bias (Pin 11), -0.25 Negative Bias (Pin 6) -10 0 2 4 6 8 10 12 Frequency (GHz) Small Signal Gain (dB) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Saturated Output Power (dBm) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias -70 -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 Frequency (GHz) Reverse Isolation (dB) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias -40 -35 -30 -25 -20 -15 -10 0 2 4 6 8 10 12 Frequency (GHz) Small Signal Return Loss (dB) Input, +12 Volt/-0.25 Volt Bias Input, +9 Volt/-0.25 Volt Bias Output, +12 Volt/ -0.25 Volt Bias Output +9 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Input IP3 (dBm) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Output IP3 (dBm) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 10 Frequency DC to 12.0 GHz Typical Performance – +9 to +12V Internal Bias (Pin 11), -0.25 Negative Bias (Pin 6), continued BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM -40 -30 -20 -10 0 2 4 6 8 10 12 Output Frequency (GHz) Even Harmonic Generation (dBm) +10 dBm Input +12 Volt/-0.25 Volt Bias, Second Harmonic +9 Volt/-0.25 Volt Bias, Second Harmonic +12 Volt/-0.25 Volt Bias, Fourth Harmonic +9 Volt/-0.25 Volt Bias, Fourth Harmonic -40 -30 -20 -10 0 2 4 6 8 10 12 Output Frequency (GHz) Odd Harmonic Generation (dBm) +10 dBm Input +12 Volt/-0.25 Volt Bias, Third Harmonic +9 Volt/-0.25 Volt Bias, Third Harmonic +12 Volt/-0.25 Volt Bias, Fifth Harmonic +9 Volt/-0.25 Volt Bias, Fifth Harmonic 0 2 4 6 8 10 12 Frequency (GHz) Input P1dB (dBm) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Output P1dB (dBm) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias 100 125 150 175 200 225 250 275 300 0 2 4 6 8 10 12 Frequency (GHz) Group Delay (ps) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias 0 2 4 6 8 10 12 Frequency (GHz) Noise Figure(dB) +12 Volt/-0.25 Volt Bias +9 Volt/-0.25 Volt Bias 100 110 120 8 9 10 11 12 13 Vd (V) Current Consumption (mA) with 10 GHz Input Vg= -0.25V, Pin= -10 dBm Vg= -0.25V, Pin= +10 dBm

Copyright © 2020 Marki Microwave, Inc. | Rev. B Page 11 Frequency DC to 12.0 GHz Outline Drawing Substrate material is Ceramic. I/O Leads and Ground Paddle are 1.4+0.6 microns (55+24 micro-inches) Au over 1.3 microns (51 micro-inches) Ni. All unconnected pads should be connected to PCB RF ground. PCB Footprint Drawing QFN-Package Surface-Mount Landing Pattern Click here for a DXF of the above layout. Click here for leaded solder reflow. Click here for lead-free solder reflow. INCH [MM] PROJECTION .114 [2.90] .114 [2.90] .031 [.78] .059 [1.50] .020 Typ [.50] .012 Typ [.30] .013 Typ [.32] .003 Typ [.08] ADM 5931 XXYY 11 1210 Ground Paddle Function N/C N/C Pad # N/C5 N/C8 RF In N/C Vg N/C RF Out N/C Vd Vd2 .000 .000 Ø.010 Plated Thru Via, 22 PL .028 .041 .061 .075 .092 .122 .010 .050 .067 .081 .067 .081 .094 .104 .122 .041 .055 .028 .057 .031 .020 .017 .037 .018 .065.085 .091 .102 .061 .035 .047 .055.067.075 .087 .075 .087 .035 .047 .030.031 .091 .094 .112 .020 .102

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 12 Frequency DC to 12.0 GHz Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 4, 5, 7, 8,10 NC These pins are not connected internally. Datasheet performance is tested with NC pins grounded. 3 RF in This pin is DC coupled and matched to 50 Ω. 6 Vg Gate control for the amplifier. External decoupling resistor/capacitor is required. 9 RF out This pad is DC coupled and matched to 50 Ω. 11 Vd Power supply voltage for the amplifier. External decoupling resistor/capacitor is required. 12 Vd2 This pin is left open for Internal Vd Bias. This pin is connected to Pin 11 (Vd) for external bias (pin 16 with bias tee). Paddle GND Ground pad should be connected to RF/DC ground with low electrical and thermal resistance. Absolute Maximum Ratings Parameter Maximum Rating Positive Bias Voltage – External Bias Tee 9 V Positive Bias Bias Voltage – Internal Bias Tee 13 V Positive Bias Current 150 mA Negative Bias Voltage -2 V Negative Bias Current 2 mA RF Input Power +15 dBm Power Dissipation 875 mW Thermal Resistance, θjc TBD Max Junction Temperature to Maintain 106 Hours Mean Time to Failure (MTTF): 175ºC ESD (Human Body Model) Class 0 Operating Temperature -55ºC to +85ºC Storage Temperature -65ºC to +150ºC RF in Vg RF out Vd GND

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 13 Frequency DC to 26.5 GHz Evaluation Board The evaluation module follows Marki standard assembly and evaluation procedures to give optimal performance for datasheet characterization. Actual QFN performance will depend on substrate material, bypass capacitors, resistors, connectors, quality of bias current/voltage source, and assembly process. Evaluation Board Bill of Materials Item Description/Part Number Connectors Southwest 214-510SF Bias Pins Kovar Housing Aluminum Circuit .008 Thick Rogers 4003 1 uF Capacitor TDK C1005X5R1V105K050BC 100 pF Capacitor KEMET C0402C101K4GACTU 0.1 uF Capacitor AVX 0402YD104KAT2A 10 Ω Resistor Venkel CR0201-20W-100JT ADM 5931 ADM-0012-5931SM DATA SHEET NOTES: 1. Specifications are subject to change without notice. Contact Marki Microwave for the most recent specifications and data sheets. ADM 5931 XXYY -Vg In Out SMA Female Connector, 2 PL (+Vd) (+Vd)Solder ribbon/wire across gap for external (output port) bias

Copyright © 2020 Marki Microwave, Inc. | Rev. B BROADBAND DISTRIBUTED AMPLIFIER ADM-0012-5931SM Page 13 Frequency DC to 26.5 GHz

Revision History

Revision Code Revision Date Comment - 2015 Datasheet Initial Release A July 2019 Changed thermal resistance to TBD B December 2020 Added Max Junction Temp Specification Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Mi crowave makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave as sume any liability whatsoever arising out of the use of or application of any product. www.markimicrowave.com