A44 JIANGSU | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR（ NPN ）
FEATURES
PCM : 0.625 W （Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 400 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μ A ， IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100μ A， IC=0 V Collector cut-off current ICBO VCB=400 V , IE=0 0.1 μ A Collector cut-off current ICEO VCE=400 V , μ A Emitter cut-off current IEBO VEB= 4 V , IC=0 0.1 μ A HFE（1） VCE=10V , IC=10 mA 300 HFE（2） VCE=10V, IC=1mA DC current gain HFE（3） VCE=10V ,IC=100 mA VCE(sat) IC=10 mA, IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.3 V Base-emitter sataration voltage VBE(sat) IC=10 mA, IB= 1 mA 0.75 V Transition frequency f T VCE=20V, IC=10mA f =30MHz MHz 1 2 3 TO—92 1.EMITTER 2.BASE 3. COLLECTOR
D b E A C L e TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L Ö Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 Max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 Min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 Max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 Dimensions In Millimeters Dimensions In Inches 0.050TYP 1.270TYP φ