AP10P500N A-POWER | Alldatasheet
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Technical content
Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -100V ▼ Small Package Outline RDS(ON) 0.5Ω ▼ Surface Mount Device ID - 1.2A ▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-amb Maximum Thermal Resistance, Junction-ambient 3 90 ℃/W Data and specifications subject to change without notice -55 to 150 1.38 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Drain Current3, VGS @ 10V -0.95 Pulsed Drain Current1 -4.8 201601281 AP10P500N Rating -100 +20 -1.2 Halogen-Free Product AP10P500 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widel y preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion o r switch applications. G D S D G S SOT-23
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-1A - - 0.5 Ω VGS=-4.5V, ID=-0.5A - - 0.6 Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-1A - 3.3 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-1A - 10.5 17 nC Qgs Gate-Source Charge V DS=-50V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 2.5 - nC td(on) Turn-on Delay Time V DS=-50V - 7 - ns tr Rise Time I D=-1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 7- ns tf Fall Time V GS=-10V - 5 - ns Ciss Input Capacitance V GS=0V - 420 670 pF Coss Output Capacitance V DS=-50V - 35 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 25 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-1A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 27 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
65mΩ Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+08 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.4 0.8 1.2 1.6 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -1A V GS = -10V 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V G = -4.0V T A = 150o C -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 320 340 360 380 400 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -0.5A T A =25 o C I D = -250uA
65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fi g 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Ambient Fig 12. Gate Charge Waveform Temperature 048 1 2 1 6 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -1A V DS = -50V 0.001 0.01 0.1 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 270℃/W 200 400 600 800 1 21 41 61 81 101 121 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Operation in this area limited by RDS(ON) 0.4 0.8 1.2 1.6 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) Q VG -10V QGS QGD QG Charge
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Fig 16. Transfer Characteristics Resistance 0.5 1.5 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 400 800 1200 1600 02468 1 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -10V T j = -55 o C
Part Number : A12 A12SS Date Code : SS SS