AP9972GS A-POWER | Alldatasheet
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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 60V ▼ Single Drive Requirement RDS(ON) 18mΩ ▼ Surface Mount Package ID 60A
Description
ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS Single Pulse Avalanche Energy3 mJ IAR A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 200803183 Thermal Data Parameter Storage Temperature Range Total Power Dissipation 89 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.7 Avalanche Current Continuous Drain Current, VGS @ 10V 38 Pulsed Drain Current1 230 Gate-Source Voltage ±25 Continuous Drain Current, VGS @ 10V 60 Parameter Rating Drain-Source Voltage 60 RoHS-compliant Product AP9972GS/P 450 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9972GP) are available for low-profile applications. G D S TO-263(S) G D S TO-220(P)
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=35A - - 18 mΩ VGS=4.5V, ID=25A - - 22 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=35A - 55 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=48V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±25V - - ±100 nA Qg Total Gate Charge2 ID=35A - 32 51 nC Qgs Gate-Source Charge V DS=48V - 8 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 20 - nC td(on) Turn-on Delay Time2 VDS=30V - 11 - ns tr Rise Time I D=35A - 58 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 45 - ns tf Fall Time R D=0.86Ω -8 0- ns Ciss Input Capacitance V GS=0V - 3170 5070 pF Coss Output Capacitance V DS=25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.7 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=35A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=35A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT AP9972GS/P
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 150 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2 5A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =35A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.2 0.7 1.2 1.7 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 100 150 200 02468 1 0 1 2 1 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP9972GS/P Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 2 04 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =48V V DS =38V V DS =30V I D =3 5A 100 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC
Package Outline : TO-220 Millimeters MIN NOM MAX A 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.6 3.10 3.6 L4 14.70 15.50 16 L5 6.30 6.50 6.70 φ 3.50 3.60 3.70 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-220 SYMBOLS ADVANCED POWER ELECTRONICS CORP. E b e D A c L Package Code Part Number Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 9972GP YWWSSS LOGO φ meet Rohs requirement
Package Outline : TO-263 Millimeters MIN NOM MAX A 4.25 4.75 5.20 A1 0.00 0.15 0.30 A2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 D 8.30 8.90 9.40 E 9.70 10.10 10.50 e 2.04 2.54 3.04 L3 4.50 4.90 5.30 L4 ----- 1.50 ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-263 SYMBOLS ADVANCED POWER ELECTRONICS CORP. Package Code Part Number E b e D A θ c XXXXXS YWWSSS Y：Last Digit Of The Year WW：Week SSS：Sequence Package Code Part Number 9972GS YWWSSS LOGO E b e D A θ c Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence meet Rohs requirement