9972GI

AP9972GI A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼▼▼▼ Low Gate Charge BVDSS 60V ▼▼▼▼ Single Drive Requirement RDS(ON) 18mΩ ▼▼▼▼ Lower On-resistance ID 35A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 31.3 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.25 Continuous Drain Current, VGS @ 10V 22 Pulsed Drain Current1 120 Gate-Source Voltage ±25 Continuous Drain Current, VGS @ 10V 35 Parameter Rating Drain-Source Voltage 60 Pb Free Plating Product 200105051 AP9972GI G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. G D S TO-220CFM(I)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=23A - - 18 mΩ VGS=4.5V, ID=12A - - 22 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=23A - 40 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=48V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±25V - - ±100 nA Qg Total Gate Charge2 ID=23A - 35 56 nC Qgs Gate-Source Charge V DS=48V - 9.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 20 - nC td(on) Turn-on Delay Time2 VDS=30V - 12 - ns tr Rise Time I D=35A - 37 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 47 - ns tf Fall Time R D=0.86Ω -5 9- ns Ciss Input Capacitance V GS=0V - 3160 5060 pF Coss Output Capacitance V DS=25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=23A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=23A, VGS=0V, - 36 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 45 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A. AP9972GI

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C = 150o C 10V 7.0V 5.0V 4.5V V G =3.0V 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =1 2A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =23A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.2 0.7 1.2 1.7 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) 120 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform AP9972GI Q VG 4.5V QGS QGD QG Charge 02 0 4 0 6 0 8 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =48V V DS =38V V DS =30V I D =2 3A 100 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss