9971GD

AP9971GD A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 60V ▼ Fast Switching Speed RDS(ON) 50mΩ ▼ PDIP-8 Package ID 5A

Description

ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice 1 AP9971GD RoHS-compliant Product 200809223 Parameter Rating Drain-Source Voltage 60 Gate-Source Voltage + 25 Continuous Drain Current3, VGS @ 10V 5 Continuous Drain Current3, VGS @ 10V 3.2 Pulsed Drain Current1 20 Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Thermal Data Parameter Storage Temperature Range Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. PDIP-8

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 60 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=5A - - 50 m Ω VGS=4.5V, ID=2.5A - - 60 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=5A - 7 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+25V - - + 100 nA Qg Total Gate Charge2 ID=5A - 32.5 - nC Qgs Gate-Source Charge V DS=48V - 4.9 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 8.8 - nC td(on) Turn-on Delay Time2 VDS=30V - 9.6 - ns tr Rise Time I D=5A - 10 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 30 - ns tf Fall Time R D=6Ω - 5.5 - ns Ciss Input Capacitance V GS=0V - 1560 - pF Coss Output Capacitance V DS=25V - 156 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.6A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=5A, VGS=0V, - 29.2 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3. Mounted on 1 in2 copper pad of FR4 board ;90℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP9971GD

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 6.0V 4.5V V G =3.0V 0.4 0.8 1.2 1.6 2.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V) 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C V G =3.0V 10V 6.0V 4.5V 0.01 0.1 100 V SD , Source-to-Drain Voltage (V) IS (A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =5A 3579 1 1 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =5A T A =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP9971GD 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 5 10 15 20 25 30 35 40 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =48V V DS =38V V DS =30V I D =5A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 Duty foctor=0.5 Single Pulse Rthja=90℃/W 0.01 0.1 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 1ms 10ms 100ms DC

Package Outline : PDIP-8 Millimeters MIN NOM MAX A 3.60 4.50 5.40 A1 0.38 ---- ---- A2 2.90 3.95 5.00 B 0.36 0.46 0.56 B1 1.10 1.45 1.80 B2 0.76 0.98 1.20 C 0.20 0.28 0.36 D 9.00 9.60 10.20 E 6.10 6.65 7.20 E1 7.62 7.94 8.26 E2 8.30 9.65 11.00 e L 3.18 ---- ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : PDIP-8

2.540 BSC

ADVANCED POWER ELECTRONICS CORP. Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Package Code Part Number E D A eB1B L C meet Rohs requirement for low voltage MOSFET only 9971GD YWWSSS