9918H

AP9918H A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low on-resistance BVDSS 20V ▼ ▼ ▼ ▼ Capable of 2.5V gate drive RDS(ON) 14mΩ ▼ ▼ ▼ ▼ Low drive current ID 45A ▼ ▼ ▼ ▼ Surface mount package

Description

ID@TC=25℃ A ID@TC=125℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.6 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 48 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.38 Continuous Drain Current, VGS @ 4.5V 20 Pulsed Drain Current1 140 Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V 45 Parameter Rating Drain-Source Voltage 20 200227032 AP9918H/J The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 12 G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=4.5V, ID=18A - - 14 mΩ VGS=2.5V, ID=9A - - 28 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance V DS=10V, ID=18A - 26 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125oC) VDS=20V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=18A - 19 - nC Qgs Gate-Source Charge V DS=20V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=5V - 10.5 - nC td(on) Turn-on Delay Time2 VDS=10V - 7.5 - ns tr Rise Time I D=18A - 83 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=5V - 18 - ns tf Fall Time R D=0.56Ω -2 3- ns Ciss Input Capacitance V GS=0V - 500 - pF Coss Output Capacitance V DS=20V - 310 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 125 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 45 A ISM Pulsed Source Current ( Body Diode )1 - - 140 A VSD Forward On Voltage2 Tj=25℃, IS=45A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9918H/J ± 12V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 120 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =4.0V V G =2.5V V G =3.0V V G =4.5V V G =3.5V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =4.0V V G =2.5V V G =3.5V V G =4.5V V G =3.0V 123456 V GS (V) RDS(ON) (m ΩΩΩΩ) I D =1 8A T C =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =4.5V I D =18A

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9918H/J 0 50 100 150 T c , Case Temperature ( o C) PD (W) 100 1000 1 10 100 V DS (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms 10us 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =15V V DS =20V V DS =10V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -50 0 50 100 150 Junction Temperature ( o C ) VGS(th) (V) 0.01 0.1 100 0 0.4 0.8 1.2 1.6 V SD (V) IF (A) T j =25 o C T j =150 o C 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 5 v D G S VDS VGS RG RD RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS I D I G