9916H

AP9916H A-POWER | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low on-resistance BVDSS 18V ▼ Capable of 2.5V gate drive RDS(ON) 25mΩ ▼ Low drive current ID 35A ▼ Single Drive Requirement

Description

V VGS V ID@TC=25℃ A ID@TC=125℃ A IDM A PD@TC=25℃ W W/℃ TSTG TJ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.5 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200227032 AP9916H/J Parameter Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.4 Thermal Data Parameter Storage Temperature Range The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ± 12 G D S TO-252(H) GD S TO-251(J) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA 0.03 V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A mΩ VGS=2.5V, ID=5.2A mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 V gfs Forward Transconductance VDS=10V, ID=6A S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=18V, VGS=0V uA Drain-Source Leakage Current (Tj=125oC) VDS=18V ,VGS=0V uA IGSS Gate-Source Leakage VGS= nA Qg Total Gate Charge2 ID=18A 17.5 nC Qgs Gate-Source Charge VDS=18V 1.2 nC Qgd Gate-Drain ("Miller") Charge VGS=5V 7.9 nC td(on) Turn-on Delay Time2 VDS=10V 7.3 ns tr Rise Time ID=18A ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V 25.6 ns tf Fall Time RD=0.56Ω ns Ciss Input Capacitance VGS=0V 527 pF Coss Output Capacitance VDS=18V 258 pF Crss Reverse Transfer Capacitance f=1.0MHz 112 pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V A ISM Pulsed Source Current ( Body Diode )1 A VSD Forward On Voltage2 Tj=25℃, IS=35A, VGS=0V 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9916H/J ± 12V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=25 oC V G=1.5V V G=2.5V V G=4.5V V G=3.5V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C=150 oC V G=1.5V V G=2.5V V G=3.5V V G=4.5V V GS (V) RDS(ON) (mΩ Ω Ω I D= 6 A T C=25 oC 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 100 150 T j , Junction Temperature ( oC) Normalized RDS(ON) V G=4.5V I D=6A

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9916H/J 100 150 T c , Case Temperature ( oC) PD (W) 0.1 100 1000 0.1 100 V DS (V) ID (A) T c=25 oC Single Pulse 10us 1ms 10ms 100ms 100us 100 125 150 T c , Case Temperature ( oC) ID , Drain Current (A) 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.2 0.45 0.7 0.95 1.2 -50 100 150 T j , Junction Temperature ( oC ) VGS(th) (V) 0.01 0.1 100 0.4 0.8 1.2 1.6 V SD (V) IS (A) T j=25 oC T j=150 oC 100 1000 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D=18A V DS=15V V DS=18V V DS=10V

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 5 v D G S VDS VGS RG RD RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS ID IG 1~ 3 mA