9120GH

AP9120GHJ-HF A-POWER | Alldatasheet

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Technical content

Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower On-resistance BVDSS -200V ▼ Simple Drive Requirement RDS(ON) 680mΩ ▼ Fast Switching Characteristic ID -8A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice Maximum Thermal Resistance, Junction-ambient (PCB mount)3 201501273 Thermal Data Parameter Rating -200 +20 0.77 Halogen-Free Product -55 to 150 Linear Derating Factor Drain Current, VGS @ 10V -5 Pulsed Drain Current1 30 -55 to 150 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range G D S G D S TO-252(H) G D S TO-251(J) AP9120 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP9120GJ) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -200 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A - - 680 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -2 - -4 V gfs Forward Transconductance V DS=-10V, ID=-5A - 7 - S IDSS Drain-Source Leakage Current VDS=-200V, VGS=0V - - -25 uA Drain-Source Leakage Current (Tj=125oC) VDS=-160V, VGS=0V - - -250 uA IGSS Gate-Source Leakage V GS= +20V, VDS=0V - - + 100 nA Qg Total Gate Charge2 ID=-5A - 35 56 nC Qgs Gate-Source Charge V DS=-160V - 6 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 15 - nC td(on) Turn-on Delay Time2 VDS=-100V - 13.5 - ns tr Rise Time I D=-5A - 16 - ns td(off) Turn-off Delay Time R G=10Ω -5 2- ns tf Fall Time V GS=-10V - 25 - ns Ciss Input Capacitance V GS=0V - 1210 - pF Coss Output Capacitance V DS=-25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 3.6 5.4 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-5A, VGS=0V - - -1.3 V trr Reverse Recovery Time2 IS=-5A, VGS=0V, - 200 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 2 - uC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 4 8 1 21 62 02 4 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -8.0V -7.0V -6.0V V G = - 5.0V 0 4 8 12 16 20 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -8.0V -7.0V -6.0V V G = -5.0V 500 540 580 620 660 700 456789 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 4A T C =25 ℃ 0.4 0.9 1.4 1.9 2.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =- 4 A V G =-10V 0.3 0.7 1.1 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0.1 100 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms 100ms DC T C =25 o C Single Pulse 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -5A V DS = -160V 400 800 1200 1600 2000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) td(on) tr td(off) tf VDS VGS 10% 90%

for low voltage MOSFET only9120GJ YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 9120GH YWWSSS meet Rohs requirement for low voltage MOSFET only