8N8R0L

AP8N8R0LH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 80V ▼ Low On-resistance RDS(ON) 8mΩ ▼ Fast Switching Characteristic ID 60A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy3 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.4 ℃/W Rthj-a 62.5 ℃/W Parameter Total Power Dissipation4 2 Storage Temperature Range Operating Junction Temperature Range -55 to 150 Thermal Data Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Total Power Dissipation 52 -55 to 150 Gate-Source Voltage + 20 Pulsed Drain Current1 Drain Current, VGS @ 10V Drain Current, VGS @ 10V 60 Parameter Rating Drain-Source Voltage 80 AP8N8R0LH Halogen-Free Product 201810171 200 G D S AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S AP8N8R0L series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 80 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 8 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=5V, ID=30A - 45 - S IDSS Drain-Source Leakage Current VDS=64V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=30A - 48 76.8 nC Qgs Gate-Source Charge V DS=40V - 12 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 13 - nC td(on) Turn-on Delay Time V DS=40V - 13 - ns tr Rise Time I D=30A - 48 - ns td(off) Turn-off Delay Time R G=6Ω -3 7- ns tf Fall Time V GS=10V - 86 - ns Ciss Input Capacitance V GS=0V - 2600 4160 pF Coss Output Capacitance V DS=40V - 1020 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 47 - pF Rg Gate Resistance f=1.0MHz - 1.5 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=30A, VGS=0V, - 39 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 35 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting T j=25oC , VDD=40V , L=0.1mH , RG=25Ω , VGS=10V 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP8N8R0LH

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP8N8R0LH 120 160 200 02468 1 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 8.0V 7.0V 6.0V V G =5.0V 100 120 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 8.0V 7.0V 6.0V V G =5.0V T C =150 o C 456789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1000 2000 3000 4000 5000 1 2 14 16 18 1 1 0 1 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 05 06 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =30A V DS =40V 0.01 0.1 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) 100 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A)T j =150 o C T j =25 o C V DS =5V T j = -55 o C

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance 0 2 04 06 08 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS =10V 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W)

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