86TO2GH

AP86T02GH A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 25V ▼ Low On-resistance RDS(ON) 6mΩ ▼ Fast Switching Characteristic ID 75A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice 200808159 AP86T02GH/J 0.5 Parameter Rating RoHS-compliant Product Drain-Source Voltage 25 Total Power Dissipation 75 -55 to 175 Gate-Source Voltage + 20 Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V 62 Pulsed Drain Current1 300 Operating Junction Temperature Range -55 to 175 Linear Derating Factor Storage Temperature Range Thermal Data Parameter The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP86T02GJ) is available for low-profile applications. G D S TO-251(J) G D S TO-252(H) G D S

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A - - 6 m Ω VGS=4.5V, ID=30A - - 10 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 42 - S IDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=175oC) VDS=20V, VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS=+20V - - + 100 nA Qg Total Gate Charge2 ID=30A - 23 37 nC Qgs Gate-Source Charge V DS=20V - 5 nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 14 nC td(on) Turn-on Delay Time2 VDS=10V - 11 - ns tr Rise Time I D=30A - 105 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 32 - ns tf Fall Time R D=0.3Ω -8- ns Ciss Input Capacitance V GS=0V - 1830 2930 pF Coss Output Capacitance V DS=25V - 490 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 360 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=20A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC Drain-Source Avalanche Ratings Symbol Parameter Test Conditions Min. Typ. Max. Units EAS Drain-Source Avalanche Energy4 ID=24A, VDD=20V, L=100uH - - 29 mJ Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A . 4.Single Pulse Test. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP86T02GH/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP86T02GH/J 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T c =25 ℃ 0.0 0.4 0.8 1.2 25 50 75 100 125 150 175 T j ,Junction Temperature ( o C) Normalized VGS(th) (V) 100 150 200 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =3.0V 10V 7.0V 5.0V 4.5V 120 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) V G = 3 .0V T C = 175o C 10V 7.0V 5.0V 4.5V 0.6 1.0 1.4 1.8 25 50 75 100 125 150 175 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =45A V G =10V V SD , Source-to-Drain Voltage (V) Is (A) T j =25 o CT j =175 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Drain-Source On Resistance AP86T02GH/J 100 1000 10000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 05 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =10V V DS =15V V DS =20V I D =30A 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 1ms 10ms 100ms DC 120 0246 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =175 o CT j =25 o C V DS =5V 0 2 04 06 08 0 1 0 0 I D (A) RDS(ON) (m 10V 4.5V 4.2V 3.8V3.5V3.2V3V2.8V

Package Outline : TO-252 Millimeters MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 E3 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-252 SYMBOLS ADVANCED POWER ELECTRONICS CORP. ee D FB1 F1 A3 C R : 0.127~0.381 (0.1mm Part Number Package Code 86T02GH YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence LOGO meet Rohs requirement

Package Outline : TO-251 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : TO-251 SYMBOLS ADVANCED POWER ELECTRONICS CORP. Millimeters 86T02GJ YWWSSS Part Number Package Code A c e D E1 E F e Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence LOGO meet Rohs requirement for low voltage MOSFET only