8550S JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR（ PNP ） FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μ A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1 mA， IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μ A， IC=0 V Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 μ A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 μ A Emitter cut-off current IEBO VEB= - 3 V， IC=0 -0.1 μ A hFE（1） VCE= -1 V, IC= -50mA 300 DC current gain hFE（2） VCE= -1 V, IC= -500mA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50 mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50 mA -1.2 V Transition frequency fT VCE=- 6 V, IC=-20mA f =30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank B C D Range 85-160 120-200 160-300 1 2 3 TO—92 1.EMITTER 2. COLLECTOR 3.BASE
D b E A C L e TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L Ö Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 Max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 Min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 Max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 Dimensions In Millimeters Dimensions In Inches 0.050TYP 1.270TYP φ