83T02GH

AP83T02GH-HF_16 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 25V ▼ Simple Drive Requirement RDS(ON) 6mΩ ▼ Fast Switching Characteristic ID 75A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice Total Power Dissipation3 2.4 Halogen-Free Product 240 Parameter Rating Drain-Source Voltage 25 Total Power Dissipation Gate-Source Voltage + 20 Drain Current, VGS @ 10V 75 Drain Current, VGS @ 10V 53 Pulsed Drain Current1 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 201501293 Thermal Data Parameter Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP83T02GJ) is available for low-profile applications. G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-251(J) G D S TO-252(H)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 25 - - V VGS=10V, ID=40A - - 6 m Ω VGS=4.5V, ID=30A - - 11 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 55 - S IDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=15A - 24 38 nC Qgs Gate-Source Charge V DS=20V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 16 - nC td(on) Turn-on Delay Time V DS=15V - 10 - ns tr Rise Time I D=30A - 84 - ns td(off) Turn-off Delay Time R G=3Ω,VGS=10V - 26 - ns tf Fall Time R D=0.5Ω -1 8- ns Ciss Input Capacitance V GS=0V - 1150 1840 pF Coss Output Capacitance V DS=25V - 485 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 365 - pF Rg Gate Resistance f=1.0MHz - 0.9 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 33 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 25 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP83T02GH/J-HF RDS(ON) Static Drain-Source On-Resistance2 3.Surface mounted on 1 in2 copper pad of FR4 board

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 120 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C 10V 7.0V 6.0V 5.0V V G =4.0V 120 160 200 048 1 2 1 6 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =40A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =30A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =15A V DS =12V V DS =15V V DS =20V 400 800 1200 1600 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

for low voltage MOSFET only83T02GJ YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 83T02GH YWWSSS meet Rohs requirement for low voltage MOSFET only