73T03GH

AP73T03GH-HF_16 A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 9mΩ ▼ Fast Switching Characteristic ID 55A ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3 ℃/W Rthj-a 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount)3 201412043 Total Power Dissipation Gate-Source Voltage + 20 Drain Current, VGS @ 10V 55 Drain Current, VGS @ 10V 39 Pulsed Drain Current1 Parameter Rating Drain-Source Voltage 30 Halogen-Free Product 160 G D S TO-252(H) G D S G D S TO-251(J) AP73T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP73T03GJ) are available for low-profile applications.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V VGS=10V, ID=30A - - 9 m Ω VGS=4.5V, ID=20A - - 16 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=30A - 42 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=30A - 13 21 nC Qgs Gate-Source Charge V DS=24V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 9.5 - nC td(on) Turn-on Delay Time V DS=15V - 8 - ns tr Rise Time I D=30A - 85 - ns td(off) Turn-off Delay Time R G=3.3Ω - 20.5 - ns tf Fall Time V GS=10V - 10 - ns Ciss Input Capacitance V GS=0V - 700 1120 pF Coss Output Capacitance V DS=25V - 215 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 155 - pF Rg Gate Resistance f=1.0MHz - 1.9 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=30A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=10A, VGS=0V, - 23 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board AP73T03GH/J-HF RDS(ON) Static Drain-Source On-Resistance2

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics +20 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 100 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C 10V 7.0V 6.0V 5.0V V G =4.0V 120 160 02468 1 0 1 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =30A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =20A T C =25 o C 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 T j , Junction Temperature ( o C) Normalized VGS(th)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics +20 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 4 8 12 16 20 24 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =30A V DS =15V V DS =18V V DS =24V 200 400 600 800 1000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Chargetd(on) tr td(off) tf VDS VGS 10% 90% Operation in this area limited by RDS(ON)

for low voltage MOSFET only73T03GJ YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number Package Code Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 73T03GH YWWSSS meet Rohs requirement for low voltage MOSFET only.