70T03GH

AP70T03GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement BVDSS 30V ▼ ▼ ▼ ▼ Low Gate Charge RDS(ON) 9mΩ ▼ ▼ ▼ ▼ Fast Switching ID 60A ▼▼▼▼ RoHS Compliant

Description

ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200823053-1/4 AP70T03GH/J Pb Free Plating Product Parameter Rating Drain-Source Voltage 30 Gate-Source Voltage ±20 Continuous Drain Current, V GS @ 10V 60 Continuous Drain Current, VGS @ 10V 43 Pulsed Drain Current1 195 Total Power Dissipation 53 -55 to 175 Operating Junction Temperature Range -55 to 175 Linear Derating Factor 0.36 Thermal Data Parameter Storage Temperature Range G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=33A - - 9 mΩ VGS=4.5V, ID=20A - - 18 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs VDS=10V, ID=33A - 35 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=175oC) VDS=24V ,VGS=0V - - 250 uA IGSS Gate-Source Leakage V GS= ±20V - - ±100 nA Qg Total Gate Charge2 ID=33A - 17 27 nC Qgs Gate-Source Charge V DS=20V - 5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 10 - nC Qoss Output Charge V DD=15V,VGS=0V - 13.5 22 nC td(on) Turn-on Delay Time2 VDS=15V - 8 - ns tr Rise Time I D=33A - 105 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 22 - ns tf Fall Time R D=0.45Ω -9- ns Ciss Input Capacitance V GS=0V - 1485 2400 pF Coss Output Capacitance V DS=25V - 245 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=33A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=20A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP70T0G3H/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =175 o C 10V 8.0V 6.0V V G =4.0V 100 150 200 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8.0V 6.0V V G =4.0V 0.4 0.8 1.2 1.6 -50 25 100 175 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =33A V G =10V 048 1 2 1 6 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =20A T C =25 ℃℃℃℃ 0.1 100 1000 0 0.5 1 1.5 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =175 o C 0.5 1.5 2.5 -50 25 100 175 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP70T03GH/J 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 5 10 15 20 25 30 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =33A V DS =16V V DS =20V V DS =24V 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge