55410

NE55410GR CEL | Alldatasheet

Document overview

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Technical content

DESCRIPTION

The NE55410GR is an N-channel enhancement -mode LDMOS F ET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, anal og/digital TV-transmitters, and the other PA’s. This product has tw o different FET's on one die manufactured using our NEW MOS technol ogy (our W Si gate lateral MOS F ET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.

FEATURES

• Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
• Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• High drain efficiency : ηd (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : ηd (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• Low intermodulation distortion : IM3 (Q1) = −40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA, f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) )
• Single Supply (VDS : 3 V < VDS ≤ 30 V)
• Excellent Thermal Stability
• Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
• Integrated ESD protection
• Excellent stability against HCI (Hot Carrier Injection) APPLICATION
• Digital cellular base station PA : W-CDMA/GSM/D-AMPS/PDC/N-CDMA/PCS etc.
• UHF-band TV transmitter PA Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER Document No. PU10542EJ02V0DS (2nd edition) Date Published June 2005 CP(K) The mark  shows major revised points.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form NE55410GR NE55410GR-T3-AZ 16-pin plastic HTSSOP (Pb-Free) Note 55410 • Embossed tape 12 mm wide

• Pin 1 and 8 indicates pull-out direction of tape
• Qty 1 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE55410GR PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name Pin No. Pin Name

1 Source 9 Source

2 Drain (Q2) 10 Gate (Q1)

3 Drain (Q2) 11 Source

4 Drain (Q2) 12 Drain (Q1)

5 Drain (Q2) 13 Source

6 Source 14 Gate (Q2)

7 Gate (Q1) 15 Gate (Q2)

8 Source 16 Source

(Top View) S S S S S S S S S S S Remark All the terminals of a Q2 connected to a circuit. Backside : Source (S) ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Ratings Unit Drain to Source Voltage VDS 65 V Gate to Source Voltage VGS ±7 V Drain Current (Q1) ID (Q1) 0.25 A Drain Current (Q2) ID (Q2) 1.0 A Total Device Dissipation (Tcase = 25°C) Ptot 40 W Input Power (Q1) Pin (Q1) f = 2.14 GHz, VDS = 28 V 0.3 W Input Power (Q2) Pin (Q2) f = 2.14 GHz, VDS = 28 V 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −65 to +150 °C Data Sheet PU10542EJ02V0DS 2 NE55410GR

THERMAL RESISTANCE (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Channel to Case Resistance Rth (ch-c) − 2.5 3.0 °C/W RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS − 28 30 V Gate to Source Voltage VGS 2.7 3.3 3.7 V Input Power (Q1), CW Pin (Q1) − 15 23 dBm Input Power (Q2), CW Pin (Q2) − 20 30 dBm ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSS (Q1) VGSS = 5V − − 1 µA Drain to Source Leakage Current IDSS (Q1) VDSS = 65 V − − 1 mA Gate Threshold Voltage Vth (Q1) VDS = 10 V, IDS = 1 mA 2.2 2.8 3.4 V Transconductance gm (Q1) VDS = 28 V, IDS = 20 mA − 0.09 − S Drain to Source Breakdown Voltage BVDSS (Q1) IDSS = 10 µA 65 75 − V Gate to Source Leak Current IGSS (Q2) VGSS = 5V − − 1 µA Drain to Source Leakage Current IDSS (Q2) VDSS = 65 V − − 1 mA Gate Threshold Voltage Vth (Q2) VDS = 10 V, IDS = 1 mA 2.0 2.6 3.2 V Transconductance gm (Q2) VDS = 28 V, IDS = 100 mA − 0.45 − S Drain to Source Breakdown Voltage BVDSS (Q2) IDSS = 10 µA 65 75 − V Data Sheet PU10542EJ02V0DS 3 NE55410GR

RF CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gain 1 dB Compression Output Power PO (1 dB) f = 2 140 MHz, VDS = 28 V, − 35.4 − dBm Drain Efficiency ηd IDset = 20 mA − 52 − % Linear Gain GL Pin = 15 dBm 12 13.5 − dB Gain 1 dB Compression Output Power PO (1 dB) f = 2 140 MHz, VDS = 28 V, − 40.4 − dBm Drain Efficiency ηd IDset = 100 mA − 46 − % Linear Gain GL Pin = 20 dBm 9.5 11 − dB Gain 1 dB Compression Output Power PO (1 dB) f = 1 840 MHz, VDS = 28 V, − 40.5 − dBm Drain Efficiency ηd IDset = 100 mA − 49 − % Linear Gain GL Pin = 20 dBm − 14 − dB Q1 + Q2 Gain 1 dB Compression Output Power PO (1 dB) f = 880 MHz, VDS = 28 V, − 41.5 − dBm Drain Efficiency ηd IDset = 120 mA (Q1 + Q2) − 55 − % Linear Gain GL Pin = 5 dBm − 30 − dB Gain 1 dB Compression Output Power PO (1 dB) f = 2 140 MHz, VDS = 28 V, − 40.0 − dBm Drain Efficiency ηd IDset = 120 mA (Q1 + Q2) 34 42 − % Output Power Pout Pin = 16 dBm 39 40 − dB Linear Gain GL Pin = 10 dBm 24 25 − dB 3rd Order Intermodulation Distortion IM3 − −40 − dBc Drain Efficiency ηd f = 2 132.5/2 147.5 MHz, VDS = 28 V, 2 carrier W-CDMA 3GPP, Test Model1, 64DPCH, 67% Clipping, IDset = 120 mA (Q1 + Q2), Ave Pout = 33 dBm − 21 − % Data Sheet PU10542EJ02V0DS 4 NE55410GR

TYPICAL CHARACTERISTICS (TA = +25°C, VDS = 28 V, IDset = 120 mA, unless otherwise specified) Gain G (dB) Output Power Pout (dBm) –10 –30 –40 –60 –50 –70 2515 20 35 40 45 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) 2 tones Output Power Pout (dBm) IM3/IM5 vs. 2 TONES OUTPUT POWER IM3 Lower Upper –20 Drain Efficiency d (%) η IM5 CW, f = 960 MHz,

1 MHz Spacing

–20 –35 –45 –60 –55 –70 2515 20 35 40 45 3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc) 2 tones Output Power Pout (dBm) IM3/IM5, DRAIN EFFICIENCY, vs. 2 TONES OUTPUT POWER IM3 –25 IM5 –30 –40 –50 –65 Lower Upper dη 100 Drain Efficiency d (%) η W-CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping,

Center Frequency 2.14GHz,

15 MHz spacing

vs. OUTPUT POWER GAIN, DRAIN EFFICIENCY, Gain G (dB) Output Power Pout (dBm) Drain Efficiency d (%) η vs. OUTPUT POWER GAIN, DRAIN EFFICIENCY, 20 25 30 35 40 45 G dη f = 840 MHz

860 MHz

880 MHz

900 MHz

920 MHz

G dη f = 2.09 GHz

2.11 GHz

2.14 GHz

2.17 GHz

2.19 GHz

Remark The graphs indicate nominal characteristics. Data Sheet PU10542EJ02V0DS 5 NE55410GR

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ Data Sheet PU10542EJ02V0DS 6 NE55410GR

EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA) S S 1 6 8 9 11 13 16 (Back side) S SSS SSS S NE55410GR (open) 2.2 nH 18 Ω TL8 TL9 TL10 TL11 15 pF 12 pF9 pF 1 kΩ 10 Ω 6.8 kΩ TL12 TL14 TL15 TL16 TL17 2 pF6 pF 2 pF TL13 0.22 Fµ A 47 pF TL18 RFout B A TL4 TL6 TL7 3 pF 47 pF TL5 0.001 Fµ B 47 Fµ VDS (+28 V) 1 kΩ 2.2 kΩ 6.8 kΩ 15 Ω TL1 TL2 TL3 0.22 Fµ 47 pF RFin 0.047 Fµ 56 nH 4 pF TL19 Symbol Width (mm) Length (mm) Symbol Width (mm) Length (mm) TL1 1.0 3.0 TL11 1.0 3.0 TL2 4.5 10.0 TL12 1.0 5.0 TL3 0.5 16.0 TL13 0.8 48.0 TL4 0.5 5.0 TL14 1.0 6.5 TL5 1.0 48.0 TL15 1.0 10.5 TL6 1.0 4.0 TL16 1.0 9.5 TL7 1.0 3.0 TL17 1.0 10.0 TL8 1.0 6.0 TL18 1.0 6.0 TL9 1.0 3.0 TL19 1.0 3.0 TL10 1.0 4.0 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10542EJ02V0DS 7 NE55410GR

EVALUATION CIRCUIT (f = 840 to 960 MHz, VDS = 28 V, IDset = 120 mA) 6.8 kΩ 0.22 Fµ 1 kΩ (Valiable) 2.2 kΩ 15 Ω 47 pF 47 pF 12 pF 3 pF 2.2 nH 18 Ω 1 kΩ (Valiable) 10 Ω 6.8 kΩ 0.047 Fµ 9 pF 47 pF 2 pF 2 pF 6 pF 0.22 Fµ 47 Fµ VGS (Q2), +28 V RF out RF in VDS (Q1), +28 V VDS (Q2), +28 VVGS (Q1), +28 V 55410 4 pF 1.5 pF 15 pF 56 nH 0.001 Fµ Data Sheet PU10542EJ02V0DS 8 NE55410GR

EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA) S S 1 6 8 9 11 13 16 (Back side) S SSS SSS S NE55410GR 12 nH 10 Ω TL14 TL12 TL13 0.75 pF 1 pF 1 kΩ 10 Ω 6.8 kΩ TL15 TL17 TL18 TL20 3 pF 1 pF TL16 0.22 Fµ A 15 pF TL21 RFout B A TL7 TL10 TL11 1 pF 33 pF TL8 0.22 Fµ B 22 Fµ VDS (+28 V) 1 kΩ 10 Ω 6.8 kΩ TL1 TL2 0.22 Fµ 47 pF RFin 0.22 Fµ TL3 TL4 TL5 8.5 pF 2 pF TL6 (open) TL9 TL19 Symbol Width (mm) Length (mm) Symbol Width (mm) Length (mm) TL1 1.0 17.0 TL12 1.0 4.0 TL2 1.0 4.0 TL13 1.0 4.5 TL3 1.0 24.5 TL14 1.0 25.0 TL4 1.0 2.5 TL15 2.5 2.5 TL5 1.0 3.0 TL16 1.0 27.0 TL6 0.5 2.5 TL17 1.0 2.0 TL7 0.5 4.5 TL18 5.0 4.0 TL8 1.0 25.5 TL19 5.0 2.0 TL9 1.0 2.5 TL20 1.0 12.5 TL10 4.5 4.5 TL21 1.0 5.5 TL11 1.0 3.5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10542EJ02V0DS 9 NE55410GR

EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, VDS = 28 V, IDset = 120 mA) VGS (Q2), +28 VVDS (Q1), +28 V VDS (Q2), +28 V 55410 VGS (Q1), +28 V 0.22 Fµ6.8 kΩ RF out RF in 0.5 pF 15 pF 2 pF 33 pF 1.0 pF 0.22 Fµ 10 Ω 12 nH 0.75 pF 10 Ω 1 pF 0.22 Fµ 6.8 kΩ 15 pF 1 pF 3 pF 0.22 Fµ

22 Fµ10 Ω

1 kΩ (Valiable) 1 kΩ (Valiable) Data Sheet PU10542EJ02V0DS 10 NE55410GR

16-PIN PLASTIC HTSSOP (UNIT: mm) (1.5) 0.9±0.2 0.20±0.10 (0.4) (2.7) (0.5) (1.8) (0.1) (2.5)5.2±0.2 5.5±0.3 6.4±0.3 0.65±0.10.20±0.10 NEC 55410 Remark ( ): Reference value LAND PATTERN (UNIT: mm) 6.40 5.20 0.10 0.50 1.50 4.00 0.48 5.50 1.50 0.20 0.65 0.40 0.201.00 1.150.28 0.50 0.24 0.24 0.50 0.28 0.28 Remarks1. Via holes : 158 holes 2. Hole size : φ 0.25 mm 3. Min. spacing : 0.354 mm 4. : Solder resist or etching Data Sheet PU10542EJ02V0DS 11 NE55410GR

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 Wave Soldering Peak temperature (molten solder temperature) : 260° C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120 °C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering met hods together (except for partial heating). Data Sheet PU10542EJ02V0DS 12 NE55410GR

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Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A -AZ Lead (Pb) < 1000 PPM Not Detected (*) Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.