AZ4580 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Large Signal V oltage Gain: 110dB Typical
  • Low Input Noise V oltage: 0.7 µVRMS (RIAA) Typical
  • Wide Gain Bandwidth Product: 15 MHz at 10KHz Typical
  • Low Distortion: 0.0005% Typical
  • Slew Rate: 7V/µs Typical

Applications

  • Audio AC-3 Decoder System
  • Audio Amplifier SOIC-8 DIP-8

Figure 1. Package Types of AZ4580

Figure 2. Pin Configuration of AZ4580 (Top View)

1 OUTPUT 1 2 INPUT 1- 3 INPUT 1+ 4 VEE

5 INPUT 2+ 6 INPUT 2- 7 OUTPUT 2 8 VCC

Figure 3. Representative Schematic Diagram of AZ4580 (Each Amplifier)

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Package Temperature Range Part Number Marking ID Packing Type Tin Lead Lead Free Tin Lead Lead Free SOIC-8 -40 to 85oC AZ4580M AZ4580M-E1 4580M 4580M-E1 Tube AZ4580MTR AZ4580MTR-E1 4580M 4580M-E1 Tape & Reel DIP-8 -40 to 85oC AZ4580P AZ4580P-E1 AZ4580P AZ4580P-E1 Tube SIP-8 -40 to 85oC AZ4580Q AZ4580Q-E1 AZ4580Q AZ4580Q-E1 Tube TSSOP-8 -40 to 85oC AZ4580G AZ4580G-E1 G80 EG80 Tube AZ4580GTR AZ4580GTR-E1 G80 EG80 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Circuit Type Package M: SOIC-8 E1: Lead Free Blank: Tin Lead AZ4580 - TR: Tape and Reel Blank: Tube P: DIP-8 Q: SIP-8 G: TSSOP-8

Ordering Information

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Parameter Smbol Value Unit Power Supply V oltage VCC + 20 VVEE - 20 Input V oltage V I ±15 V Differential Input V oltage V ID ±30 V Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Lead Temperature (Soldering 10s) T L 260 oC Power Dissipation (TA=25oC) PD TSSOP-8 400 mW SOIC-8 500 SIP-8 750 DIP-8 800 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi- cated under "Recommended Operating Conditi ons" is not implied. Exposure to "A bsolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply V oltage ± 2 ± 18 V Operating Temperature Range -40 85 oC Absolute Maximum Ratings (Note 1)

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Operating Conditions: VCC=+15V , VEE=- 15V , TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max Unit Supply Current no load 4 7 mA Input Offset V oltage RS≤10KΩ 0.5 3 mV Input Offset Current VCM=0V 5 100 nA Input Bias Current VCM=0V 150 500 nA Input Common Mode V oltage Range ±12 ±13.5 V Common Mode Rejection Ratio VCM=0V to VCC-1.5V , RS≤10KΩ 80 110 dB Large Signal V oltage Gain RL=2KΩ, VO=±10V 90 110 dB Power Supply Rejection Ratio RS≤10KΩ 80 110 dB Output Sink Current V- = 1 V, V + = 0 V, VO=2V 80 mA Output Source Current V + = 1 V, V- = 0 V, VO=2V 45 mA Slew Rate RL≥2KΩ 7 V/µS Gain Bandwidth Product RL=2KΩ, f=10KHz 15 MHz Total Harmonic Distortion AV=20dB, VO=5V RL=2KΩ, f=1KHz 0.0005 % Equivalent Input Noise V oltage RIAA RS=50Ω, 30KHz LPF 0.7 µVRMS

Electrical Characteristics

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Typical Applications (Continued) Figure12. Application of AZ4580 in Tone Control Figure11. Application of AZ4580 in a RIAA Preamp Phono Cartridge 33µF 100pF 47K 390 100µF 4.7nF 15nF 16K 200K 470 10µF 100K 1/2AZ4580 1/2 AZ4580 R7 3.6K VO R6 500KR5 3.6K Vi R1 11K R2 100K R3 11K 0.005µF R4 11K 0.05µF C2 0.05µF BOOST -TREBLE-CUT BOOST -BASS-CUT

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Mechanical Dimensions DIP-8 Unit: mm(inch) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) φ

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) Unit: mm(inch) 6.250(0.246) 6.750(0.266) 18.900(0.744) 19.400(0.764) 7.700(0.303) 8.300(0.327) 1PIN 1.500(0.482) 0.420(0.017) 0.580(0.023) 0.200(0.008) 0.300(0.012) 2.550(0.100) 3.050(0.120) 3.100(0.122) 3.700(0.146)

1 PIN INDEX

o 0.850(0.033) 1.150(0.045) SIP-8

DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Data Sheet Jul. 2006 Rev. 1. 6 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) 4.300(0.169) 0.400(0.016) 0.190(0.007) 0.300(0.012) SEE DETAIL A DETAIL A 2.900(0.114) 0.050(0.002) MAX 1.950(0.077) 12 ° TOP & BOTTOM R0.090(0.004) 0.450(0.018) 0.750(0.030) 1.000(0.039) 6.400(0.252) 0.800(0.031) 1.050(0.041) 0.090(0.004) 0.200(0.008) GAGE PLANE SEATING PLANE 0.250(0.010) 3.100(0.122) 4.500(0.177) TYP 0.650(0.026) TYP TYP TYP R0.090(0.004) REF

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com