AZ4559 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Internally Frequency Compensated
  • Large Signal V oltage Gain: 100dB Typical
  • Gain and Phase Match between Amplifiers
  • Gain Bandwidth Product (at 10KHz): 6MHz
  • Slew Rate: 3V/µs Typical
  • Pin to Pin Compatible with MC1458

Applications

  • Audio AC-3 Decoder System
  • Audio Amplifier

Figure 1. Package Types of AZ4559

Figure 3. Functional Block Diagram of AZ4559 (Each Amplifier)

8 VCC

7 OUTPUT 2

6 INPUT 2-

5 INPUT 2+

Figure 2. Pin Configuration of AZ4559 (Top View)

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Data Sheet Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

Ordering Information

Tin Lead Lead Free Tin Lead Lead Free SOIC-8 -40 to 85oC AZ4559M AZ4559M-E1 4559M 4559M-E1 Tube AZ4559MTR AZ4559MTR-E1 4559M 4559M-E1 Tape & Reel DIP-8 -40 to 85oC AZ4559P AZ4559P-E1 AZ4559P AZ4559P-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Circuit Type Package M: SOIC-8 E1: Lead Free Blank: Tin Lead AZ4559 - TR: Tape and Reel Blank: Tube P: DIP-8 Parameter Symbol Value Unit Power Supply V oltage VCC +20 V VEE -20 V Input V oltage V I ±15 V Differential Input V oltage V ID ±30 V Operating Junction Temperature T J 150 oC Storage Temperature Range T STG -65 to 150 oC Lead Temperature (Soldering 10s) T L 260 oC Power Dissipation PD DIP 800 mWSOIC 500 Note 1: Stresses greater than those list ed under "Absolute Maximum Ratings" may cause permanent dama ge to the device. These are stress ratings only, and functi onal operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolut e Maximum Ratings" for extended periods may affect device reliability. Absolute Maximum Ratings (Note 1) Recommended Operating Conditions Parameter Min Max Unit Supply V oltage ±2 ±18 V Operating Temperature Range -40 85 oC

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Data Sheet Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

Parameter Symbol Conditions Min Typ Max Unit Input Offset V oltage VIO 0.5 3 mV Input Offset Current IIO VCM=0V 10 100 nA Input Bias Current IIB VCM=0V 70 400 nA Large Signal V oltage Gain AVD RL= 2kΩ, VO=±10V 85 100 dB Supply V oltage Rejection Ratio SVR RS≤10kΩ 80 95 dB Supply Current ICC All Amplifiers, No Load 2.5 5.0 mA Input Common Mode V oltage Range VICM ±12 V Common Mode Rejection Ratio CMRR RS≤10kΩ 70 95 dB Output V oltage Swing VO RL≥10kΩ ±12 ±14 V RL≥2kΩ ±10 ±13 Slew Rate SR VI=±10V , RL=2kΩ, CL=100pF, unity gain 3.0 V/µs Rise Time TR VI=±20mV , RL=2kΩ, CL=100pF, unity gain 0.25 µs Overshoot KOV VI=±20mV , RL=2kΩ, C L=100pF, unity gain 9% Input Resistance RI 0.3 0.7 MΩ Output Resistance RO 45 Ω Unity Gain Bandwidth B 3.5 MHz Gain Bandwidth Product GBWP VI= ±10mV , RL=2kΩ, CL=100pF, f=10kHz 6.0 MHz Total Harmonic Distortion Plus Noise THD+N f=1kHz, AV=6dB, RL=10kΩ, VO=1VRMS 0.002 % Equivalent Input Noise V oltage Density eN RS=100Ω, f=1kHz 10 Output Current ISINK V-=1V, V+=0V, VO=2V 65 mA ISOURCE V+=1V , V-= 0V , VO=2V 35 Operating Conditions: VCC=+15V , VEE= -15V , TA=25oC, unless otherwise specified. nV Hz

Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature

Figure 10. Typical Application of AZ4559 in Audio 2nd Order Low Pass Filter

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Data Sheet Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions DIP-8 Unit: mm(inch) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP

DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Data Sheet Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) φ

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com