4501GSD

AP4501GSD A-POWER | Alldatasheet

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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ ▼ ▼ ▼ Simple Drive Requirement N-CH BV DSS 30V ▼ ▼ ▼ ▼ Low On-resistance RDS(ON) 27mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID 7A P-CH BV DSS -30V RDS(ON) 49mΩ Description ID -5A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current3 -5 A ID@TA=70℃ Continuous Drain Current3 -4.2 A IDM Pulsed Drain Current1 -30 A PD@TA=25℃ Total Power Dissipation W Linear Derating Factor W/ ℃ TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Pb Free Plating Product Parameter 200504042 AP4501GSD Thermal Data ±20 -55 to 150 0.016 -55 to 150 5.8 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. PDIP-8

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 27 mΩ VGS=4.5V, ID=5A - - 50 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=7A - 12 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=±20V - - nA Qg Total Gate Charge2 ID=7A - 9 13 nC Qgs Gate-Source Charge V DS=24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=1A - 5 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 19 - ns tf Fall Time R D=15Ω -4- ns Ciss Input Capacitance V GS=0V - 645 800 pF Coss Output Capacitance V DS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=7A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC AP4501GSD ±100

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/ ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 49 mΩ VGS=-4.5V, ID=-3A - - 75 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-5.3A - 8 - S IDSS Drain-Source Leakage Current ( Tj =25oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current ( Tj =70oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=-5A - 9 15 nC Qgs Gate-Source Charge V DS=-24V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 5 - nC td(on) Turn-on Delay Time2 VDS=-15V - 10 - ns tr Rise Time I D=-1A - 7 - ns td(off) Turn-off Delay Time R G=6Ω,VGS=-10V - 27 - ns tf Fall Time R D=15Ω -1 6- ns Ciss Input Capacitance V GS=0V - 460 730 pF Coss Output Capacitance V DS=-25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time2 IS=-5A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad. ± 20V ±100± 20V ±100± 20V

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4501GSD 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 8.0V 6.0V 5.0V V G =4. 0 V 0.2 0.8 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =7A V G = 10V 100 258 1 1 V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =7A T A =25 ℃℃℃℃ 0235 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 8.0V 6.0V 5.0V V G =4.0V 0.01 0.1 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) IS(A) T J =150 o C T J =25 o C 0.5 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 10s DC 048 1 2 1 6 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7.0A VDS =16V VDS =20V VDS =24V 100 1000 1 7 13 19 25 31 VDS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP4501GSD 0.6 0.8 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G = -10V I D =-5.0A 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -10V -8.0V -6.0V -5.0V V G =-4 .0V 012345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =150 o C -10V -8.0V -6.0V -5.0V V G =-4 .0V 120 3579 1 1 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m ΩΩΩΩ) I D =-5.0A T A =25 ℃℃℃℃ 0.01 0.1 0.1 0.4 0.7 1 1.3 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.5 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) -VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty Factor = 0.5 Single Pulse 0.01 0.1 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 10s DC 0 4 8 12 16 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =-5.0A V DS =-24V 100 1000 1 5 9 1 31 72 12 52 9 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge