4435

4435 CXW | Alldatasheet

Document overview

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Technical content

P-channel Enhancement Mode MOSFET 4435 The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) < @ RDS(ON) < Ω @  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Application  PWM applications  Load switch  Power management ABSOLUTE MAXIMUM RATINGS(T A =25℃unless otherwise noted) 4435 26m Ω 18m VGS=-4.5V VGS=-10V Parameter Symbol Maximum Unit Drain-source Voltage VDS -30 V Gate-source Voltage VGS ±20 V Drain Current TA=25℃ @ Steady State ID -10 A TA=70℃ @ Steady State -8 Pulsed Drain Current A IDM -50 A Total Power Dissipation @ TA=25℃ PD 3.0 W Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 42 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ Marking and pin assignment S G D D D D S S G D S G D S

ELECTRICAL CHARACTERISTICS

A =25℃unless otherwise noted) 3424 DATASHEET 3424 3424 DATASHEET 3424 P-channel Enhancement Mode MOSFET 4435 Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V,TC=25℃ -1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.0 -1.5 -2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= -10V, ID=-10A 16 18 mΩ VGS= -4.5V, ID=-5.0A 21.5 26 Diode Forward Voltage VSD IS=-10A,VGS=0V -0.8 -1.2 V Maximum Body-Diode Continuous Current IS -10 A Dynamic Parameters Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHZ 1500 pF Output Capacitance Coss 327 Reverse Transfer Capacitance Crss 276 Switching Parameters Total Gate Charge Qg VGS=-10V,VDS=-15V,ID=-9.1A nC Gate Source Charge Qgs 5.3 Gate Drain Charge Qgd 7.6 Turn-on Delay Time tD(on) VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.5Ω ns Turn-on Rise Time tr 20 Turn-off Delay Time tD(off) 95 Turn-off Fall Time tf 65 A. Repetitive Rating: Pulse width limited by maximum junction temperature. B. Surface Mounted on FR4 Board, t ≤ 10 sec.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3424 DATASHEET 3424 3424 DATASHEET 3424 P-channel Enhancement Mode MOSFET 4435 Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3424 DATASHEET 3424 3424 DATASHEET 3424 P-channel Enhancement Mode MOSFET 4435 Figure7. Safe Operation Area Figure8. Switching wave

Package Information

P-channel Enhancement Mode MOSFET 4435 SOP-8