4435 HOTTECH | Alldatasheet

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Technical content

Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD.

FEATURES

Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance VDS=-30V,ID=-8A RDS(on) (m-ohm) 0.020 @ VGS = - 10V ,ID= -8A 0.030 @ VGS = -4.5V,ID= -5A

APPLICATIONS

Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS Continuou5 Drain Current (TJ 150OC)a TA

25 OC ID

−8.0 A Pul5ed Drain Current IDM −50 continuou5 Source Current (Diode Conduction)a IS −2.1 −1.25 Maximum PoWer Di55ipationa TA

25 OC PD

2.5 1.5 W TA 70 OC 1.6 0.9 operating Junction and Storage Temperature Range TJ, T5tg −55 to 150 OC a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta T 10 Sec RthJA 40 50 OC/W Steady State 70 85 Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 4435 P-Channel MOSFET SD S D SD G D SOP-8 Top View S G D Page:P5-P1

Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD. Electrical Characteristics (TA=25°C, unless otherwise noted) Notes a. Pulse test; pulse width 300 us, duty cycle 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 4435 SPECIFICATIONS (T J = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V GS(th) V DS = V GS , I D = −250 /C0109A −2.2 V Gate-Body Leakage I GSS V DS = 0 V, V GS = /C003420 V /C0034100 nA Zero Gate Voltage Drain Current I DSS V DS = −24 V, V GS = 0 V −100 Zero Gate Voltage Drain Current I DSS On-State Drain Current a I D(on) V DS = −5 V, V GS = −10 V −40 A Drain Source On State Resistance a r DS( ) V GS = −10 V, I D = −8.0 A 0.015 0.020 /C0087 Drain-Source On-State Resistance a r DS(on) V GS = −4.5 V, I D = −5.0 A 0.025 0.030 /C0087 Forward Transconductance a g fs V DS = −10 V, I D = −9.1 A S Diode Forward Voltage a V SD I S = −3.0 A, V GS = 0 V −0.8 −1.28 V Dynamic b Total Gate Charge Q g Gate-Source Charge Q gs V DS = −15 V, V GS = −10 V, I D = −9.1 A 5.8 nC Gate-Drain Charge Q gd 8.6 Turn-On Delay Time t d(on) Rise Time t r V DD = −15 V, R L = 15 /C0087 Turn-Off Delay Time t d(off) V DD 15 V R L = 15 /C0087 I D /C0094 −1 A, V GEN = −10 V, R G = 6 /C0087 110 170 ns Fall Time t f 110 Source-Drain Reverse Recovery Time t rr I F = −2.1 A, di/dt = 100 A//C0109s nA Page:P5-P2

Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD.

4435 Typical Characteristics

V GS = 10 thru 6 V T C = −55/C0095C 125/C0095C 25/C0095C Output Characteristics Transfer Characteristics V DS − Drain-to-Source Voltage (V) − Drain Current (A)I D V GS − Gate-to-Source Voltage (V) − Drain Current (A)I D 3 V 4 V 5 V r DS(on) − On-Resiistance (Normalized) − On-Resistance (r DS(on) /C0087) 600 1200 1800 2400 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 1 02 03 04 0 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 1 02 03 04 05 0 V DS − Drain-to-Source Voltage (V) C oss C iss V DS = 15 V I D = 9.1 A I D − Drain Current (A) V GS = 10 V I D = 9.1 A V GS = 4.5 V Gate Charge On-Resistance vs. Drain Current − Gate-to-Source Voltage (V) Q − C − Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature T − /C0095 C rss V GS = 10 V Page:P5-P3

Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD. g Total Gate Charge (nC) J Junction Temperature ( C) 0.00 0.02 0.04 0.06 0.08 0.10 02468 1 0 T J = 150/C0095C I D = 9.1 A Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage − On-Resistance (r DS(on) /C0087) V SD − Source-to-Drain Voltage (V) V GS − Gate-to-Source Voltage (V) − Source Current (A)I S T J = 25/C0095C Page:P5-P4

Power (W) Single Pulse Power Time (sec) 1 10 60010 100 −0.4 −0.2 0.0 0.2 0.4 0.6 −50 −25 0 25 50 75 100 125 150 I D = 250 /C0109A 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage Variance (V)V GS(th) T J − Temperature (/C0095C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 70/C0095C/W 3. T JM − T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM 1 100 600 1010 Safe Operating Area, Junction-to-Ambient V DS − Drain-to-Source Voltage (V) 100 0.1 1 10 100 0.01 T A = 25/C0095C Single Pulse − Drain Current (A)I D P(t) = 10 dc 0.1 I DM Limited I D(on) Limited DS(on) Limited BV DSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO ., LTD. Page:P5-P5