S9018 HOTTECH | Alldatasheet
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Page:P3 -P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING :J8 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 30 V Collector-EmitterV oltage V CE O 15 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 50 m A Collector Pow er Dissipation PC 0.2 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V CBO IC = 100μA, IE=0 30 V Collector-emitter breakdow n voltage V CEO IC = 1mA, IB =0 15 V Emitter-base breakdow n voltage V EBO IE=100μA, IC =0 5 V Collector cut-off current ICB O V CB =12V , IE=0 0.05 μA Collector cut-off current ICE O V CE =12V , IB =0 0.1 μA Emittercut-offcurrent IEB O V EB = 3V , IC =0 0.1 μA DC current gain hFE(1) V CE =5V ,IC = 1mA 70 190 Collector-emitter saturationvoltage V CE (sat) IC =10mA, IB = 1mA 0.5 V Base-emitter saturationvoltage V BE (sat) IC =10mA, IB = 1mA 1.4 V Transition frequency fT V CE =5V ,IC = 5mA f=400MHz
600 MHz
(N PN ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO S9018
Page:P3 -P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics S9018
Ambient Temperature: Ta ( C) O 0 25 100 150 100 200 300 Power Dissipation: Ptot (mW) Power Dissipation vs Ambient Temperature 50 75 125 250 150 Plastic-Encapsulate Transistors Page:P3 -P3GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical CharacteristicsS9018