S9018W HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUS TRIAL CO,. LTD. FE A TURES High current gain bandwidth product. power dissipation.(PC=200mW) Marking:J8 MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 25 V Collector-EmitterV oltage V CEO 18 V Emitter-Base V oltage V EBO 4 V Collector Current-Continuous IC 50 m A Collector Pow er Dissipation PC 200 m W StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Testconditions M in Typ M ax U nit Collector-base breakdow n voltage V CBO IC =100μA,IE=0 25 V Collector-em itter breakdown voltage V CEO IC =0.1mA,IB =0 18 V Emitter-base breakdow n voltage V EBO IE=-100μA,IC =0 4 V Collectorcut-offcurrent ICBO V C B =20V ,IE=0 0.1 μA Collectorcut-offcurrent ICEO V C E=15V ,IB =0 0.1 μA Emittercut-offcurrent IEBO V EB =3V ,IC =0 0.1 μA DC currentgain hFE V C E=5V ,IC =1mA 70 190 Collector-em itter saturationvoltage V CE(sat) IC =10 mA, IB = 1mA 0.5 V Base-emittersaturationvoltage V BE(sat) IC =10 mA, IB = 1mA 1.4 V Transitionfrequency fT V C E=5V, IC = 5mA f=400MHz 600 MHz S9018W (N PN ) 1. BASE 2. EMITTER SOT -323 3. COLLECTO
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUS TRIAL CO,. LTD. S9018W Typical Characteristics