3N243 OPTEK | Alldatasheet

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Product Bulletin 3N243, 3N243TX. : ° September 1996 -_-_ SS . . ape . High Reliability Optically Coupled Isolators Types 3N243, 3N244, 3N245, 3N243TX, 3N244TX, 3N245TX rrti‘CO—O ee ene THIS DIMENSION 15 CONTROPLLED AT THE HOUSING SURFACE. DIMENSIONS ARE_IN INCHES (WILLIMETERS) Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) ¢ TO-72 hermetically sealed package Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering * 1kVDC electrical isolation HOM). oes eee eee eee eee eee e cece eerste et eneetereereeres 240°C?) Input Diode reliability design optically coupled Output Phototi ist isolator consisting of an infrared emitting cw i c ‘ rao n lor 30 mA diode and an NPN silicon phototransistor Cones mranataeh UNEM cee e eee eee tence eens ae mounted in a hermetically sealed TO-72 ‘ollector- Mitter Voltage ©... eee cece cece eect eeeee a Notes: Typical screening and lot acceptance (1) Measured with input leads shorted together and output leads shorted together. tests are provided on page13-4, (2) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (3) Derate linearly 0.60 mW/ C above 65°C. Replaces (4) Derate linearly 2.0 mWP C above 25°C. P (5) The input waveform is supplied by a generator with the following characteristics: 3N243R, 3N244R, 3N245R Zour = 50 Q, tr < 15 ns, duty cycle = 1%, pulse width = 100 ms. a Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 13-14

Types 3N243, 3N244, 3N245 3N243TX, 3N244TX, 3N245TX Electrical Characteristics (Ta = 25° C unless otherwise noted) 3N243TX 3N244TX 3N245TX Symbol Parameter [ min | Typ [Max] min | Typ | Max [ min | Typ | Max | Test Conditions Input Diode ve Frwwsvotoe [oso] [sao[aeo] [rsofomo] [sso] v [r=tooma ‘| Fao) | 20| 120] [180] 120 _[1s0| v_[e=t00ma Tansee | foro) [+20] 070] [sa0|70| [sao] v [e=100ma Ta=100"C um | oo? a frewwcoen | |e] | vm] [0 [a are EF ae} Output Phototransistor ] = S Vien)ceo |Collector-Emitter v ie = 1,00 mA =o Breakdown Voltage | Ver)Eco | Emitter-Collector 5.0 5.0 V |te=100pA Breakdown Voltage | Iceo |Collector Dark 100 100 100 | nA \\Voe =10.0V | ‘Current 100 | 100 100 | pA |VcE = 10.0 V, Ta = 100°C | {Coupled | Current | | Ta= 55°C MA |l-=10.0mA, Vce=10.0V, | | [te = 100°C vecon|eamcorenw | | lomo) | | | || | v [eetommestsoma | Saturation Voltage T | lo Leakage | 100 nA (vo =+1.00kvpc"™ Input-to-Output | Cio Capacitance pF he =0V,f=1.00MH2" | Input-to-Output | | |e fowsenn [| fea) [eel | |maae eegav ra Ri=100Q a oanarariw | [free | [wolf | Leo we Optek reserves the right to make changes at any time in order to improve design and to supply the best product. possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (214)323-2200 Fax (214)323-2396 13-15,