40T03GP

AP40T03GP A-POWER | Alldatasheet

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Technical content

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low Gate Charge RDS(ON) 25mΩ ▼ Fast Switching ID 28A ▼ RoHS Compliant

Description

ID@TA=25℃ A ID@TA=100℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 31.25 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.25 Continuous Drain Current, VGS @ 10V 24 Pulsed Drain Current1 95 Gate-Source Voltage ±25 Continuous Drain Current, VGS @ 10V 28 Parameter Rating Drain-Source Voltage 30 200331053-1/4 AP40T03GS/P Pb Free Plating Product G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03J) are available for low-profile applications. G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GP) are available for low-profile applications. G D S TO-263(S) G D S TO-220(P)

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 -V / ℃ RDS(ON) Static Drain-Source On-Resistance V GS=10V, ID=18A - - 25 mΩ VGS=4.5V, ID=14A - - 45 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=18A - 15 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS= ±25V - - ±100 nA Qg Total Gate Charge2 ID=18A - 8.8 - nC Qgs Gate-Source Charge V DS=20V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5.8 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=18A - 62 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 16 - ns tf Fall Time R D=0.83Ω - 4.4 - ns Ciss Input Capacitance V GS=0V - 655 - pF Coss Output Capacitance V DS=25V - 145 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A ISM Pulsed Source Current ( Body Diode )1 -- 9 5 A VSD Forward On Voltage2 Tj=25℃, IS=28A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP40T03GS/P

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP40T03GS/P V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C 10V 8 .0V 6 .0V V G =4.0V V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 8 .0V 6 .0V V G =4 .0 V 0.2 0.8 1.4 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =18A V G =10V 0 5 10 15 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =14A T C =25 ℃ 0.1 100 0 0.4 0.8 1.2 1.6 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform AP40T03GS/P 100 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0369 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =10V V DS =15V V DS =20V 100 1000 1 8 15 22 29 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge