AP3P010I A-POWER | Alldatasheet
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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% UIS Test BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 10mΩ ▼ Fast Switching Characteristic ID 4 -41A ▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy3 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 5 ℃/W Rthj-a 65 ℃/WMaximum Thermal Resistance, Junction-ambient Thermal Data Parameter 201802131 -55 to 150 Halogen-Free Product Rating -30 Drain Current, VGS @ 10V4 +20 -41 Pulsed Drain Current1 -160 -26 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, V GS @ 10V4 -55 to 150 Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Total Power Dissipation 1.92 28.8 G D S AP3P010 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-220CFM package is widely preferred for all commercial- industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. G D S TO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 10 m Ω VGS=-4.5V, ID=-20A - - 17 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-5V, ID=-30A - 52 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-20A - 36 57.6 nC Qgs Gate-Source Charge V DS=-24V - 10 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 15 - nC td(on) Turn-on Delay Time V DS=-15V - 10 - ns tr Rise Time I D=-30A - 73 - ns td(off) Turn-off Delay Time R G=3.3Ω - 120 - ns tf Fall Time V GS=-10V - 125 - ns Ciss Input Capacitance V GS=0V - 3650 5840 pF Coss Output Capacitance V DS=-25V - 415 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 295 - pF Rg Gate Resistance f=1.0MHz - 9 18 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-30A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-30A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting T j=25oC , VDD=-30V , L=0.1mH , RG=25Ω, VGS=-10V THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 4.Ensure that the junction temperature does not exceed TJmax..
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 120 160 200 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =25 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 100 120 0123456 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -20 A T C =25 ℃ 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -30 A V G = - 10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = - 250uA -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge 0.1 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) 100us 1ms 10ms DC T C =25 o C Single Pulse 0 2 04 06 08 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -20A V DS = -24V 1000 2000 3000 4000 5000 6000 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o C V DS = -5V T j = -55 o C 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON)
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Resistance 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 100 0 2 04 06 08 0 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A)
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