3A010A

AP3A010AMT A-POWER | Alldatasheet

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Technical content

Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 10.4mΩ ▼ RoHS Compliant & Halogen-Free

Description

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 10V4 A ID@TA=25℃ Drain Current3, VGS @ 10V A ID@TA=70℃ Drain Current3, VGS @ 10V A IDM Pulsed Drain Current1 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Symbol Rating Units Rthj-c 6 ℃/W Rthj-a 35 ℃/W Halogen-Free Product -55 to 150 AP3A010AMT Rating 11.5 3.57 Thermal Data 201705051 Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 -55 to 150 +20 AP3A010A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device fo PMPAK ® 5x6 dual pad provide superior thermal performance and is design for surface mount applications. PMPAK® 5x6 S1 G1 S2 G2 D1 D1 D2 D2

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 10.4 m Ω VGS=4.5V, ID=7A - - 15.3 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=1mA 1.45 - 3 V gfs Forward Transconductance V DS=5V, ID=10A - 40 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=7A - 14 22.4 nC Qgs Gate-Source Charge V DS=15V - 4.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 5.3 - nC td(on) Turn-on Delay Time V DS=15V - 9 - ns tr Rise Time I D=1A - 8 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 9- ns tf Fall Time V GS=10V - 9 - ns Ciss Input Capacitance V GS=0V - 1530 2448 pF Coss Output Capacitance V DS=15V - 225 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.9A, VGS=0V - - 1.2 V trr Reverse Recovery Time I S=12A, VGS=0V, - 11 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 85 ℃/W on steady state. 4.Package limitation current is 12A . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP3A010AMT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 o C 10V 7.0V 6.0V 5.0V V G = 4.0V 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =12A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =7A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0.01 0.1 100 0.01 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=85oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 8 16 24 32 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =15V 1000 2000 3000 1 5 9 13 17 21 25 29 33 37 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Charge Operation in this area limited by RDS(ON) 0123456 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o CV DS =5V

Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence Part Number 3A010A YWWSSS