AZ386 BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Wide Supply V oltage Range: 4V to 16V
  • Low Quiescent Current Drain: 6mA
  • V oltage Gains from 20 to 200
  • Battery Operation
  • Minimum External Parts
  • Low Power Dissipation
  • Low Distortion

Applications

  • AM-FM Radio Amplifier
  • Cordless Phone
  • TV Sound Systems
  • Portable Tape Player Amplifier
  • Intercoms
  • Line Drivers
  • Ultrasonic Drivers
  • Small Servo Drivers
  • Power Converters

Figure 1. Package Types of AZ386

Figure 3. Functional Block Diagram of AZ386

8 GAIN

7 BYPASS

6 VCC

5 VOUT

Figure 2. Pin Configuration of AZ386

LOW VOLTAGE AUDIO POWER AMPLIFIER Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Data Sheet AZ386

Ordering Information

Tin Lead Lead Free Tin Lead Lead Free SOIC-8 0 to 70oC AZ386M AZ386M-E1 386M 386M-E1 Tube AZ386MTR AZ386MTR-E1 386M 386M-E1 Tape & Reel DIP-8 0 to 70oC AZ386P AZ386P-E1 AZ386P AZ386P-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Circuit Type Package M: SOIC-8 E1: Lead Free Blank: Tin Lead AZ386 - TR: Tape and Reel Blank: Tube P: DIP-8

LOW VOLTAGE AUDIO POWER AMPLIFIER Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Data Sheet AZ386 Parameter Symbol Value Unit Power Supply V oltage VCC 18 V Package Dissipation (Note 2) PD AZ386P 1.25 W AZ386M 0.73 W Input V oltage VIN -0.4 to 0.4 V Junction Temperature TJ 150 oC Storage Temperature Range TSTG -55 to 150 oC Soldering Information DIP-8 Soldering (10 sec.) 260 oC SOIC-8 (15 sec.) 215 Thermal Resistance θJA DIP-8 107 oC/WSOIC-8 172 Absolute Maximum Ratings (Note 1) Parameter Min Max Unit Operating Temperature Range 0 70 oC Recommended Operating Conditions Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: For operation in ambient temperatures (T A) above 25 oC, the device must be derated based on a 150 oC maximum junction temperature and 1) a thermal resistance of 107 oC/W junction to ambient for the Dual-in-Line package and 2) a thermal resistance of 172oC/W for the small outline package.

Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited LOW VOLTAGE AUDIO POWER AMPLIFIER Data Sheet AZ386 Electrical Characteristics (Note 3) Parameter Symbol Test Conditions Min Typ Max Unit Supply V oltage V CC 41 6 V Quiescent Current I Q VCC=6V , VIN=0 68 m A Output Power POUT VCC=6V , RL=8Ω, THD=10% 250 300 mW VCC=9V , RL=8Ω, THD=10% 500 800 mW VCC=16V , RL=32Ω, THD=10% 700 1000 mW V oltage Gain GV VCC=6V , f=1KHz 10µF from Pin 1 to 8 26 dB 45 dB Bandwidth BW VCC=6V , Pins 1 and 8 open 500 KHz Total Harmonic Distortion THD VCC=6V , RL=8Ω, POUT=125mW f=1KHz, Pins 1 and 8 open 0.27 % Power Supply Rejection Ratio PSRR VCC=6V , f=1KHz, C BYPASS=10µF, Pins 1 and 8 open, Referred to Output 45 dB Input Resistance R IN 70 K Ω Input Bias Current I BIAS VCC=6V , Pins 2 and 3 open 10 nA Note 3: All voltages are measured with respect to the ground pin, unless otherwise specified. Operating Conditions: TA=25oC unless otherwise specified.

Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited LOW VOLTAGE AUDIO POWER AMPLIFIER Data Sheet AZ386 Mechanical Dimensions SOIC-8 Unit: mm(inch) R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) φ

LOW VOLTAGE AUDIO POWER AMPLIFIER Oct. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited Data Sheet AZ386 DIP-8 Mechanical Dimensions (Continued) Unit: mm(inch) R0.750(0.030) 0.254(0.010)TYP 0.130(0.005)MIN 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)TYP 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)MIN Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 1.524(0.060) TYP

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com