AP38053M A-POWER | Alldatasheet
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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS -30V ▼ Fast Switching Characteristic RDS(ON) 50mΩ ▼ Simple Drive Requirement ID 3 -5A ▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃/W Data and specifications subject to change without notice -30 +20 Thermal Data -55 to 150 -55 to 150 Drain Current 3, VGS @ 10V -4 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current 3, VGS @ 10V AP38053M Rating Halogen-Free Product Pulsed Drain Current1 -20 201608101 Parameter Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range AP38053 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SO-8
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 53 m Ω VGS=-4.5V, ID=-3A - - 90 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-5A - 10 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 30 uA Qg Total Gate Charge I D=-2A - 6.7 10.7 nC Qgs Gate-Source Charge V DS=-15V - 2.3 - nC Qgd Gate-Drain ("Miller") Charge V GS=-4.5V - 1.8 - nC td(on) Turn-on Delay Time V DS=-15V - 4 - ns tr Rise Time I D=-1A - 19 - ns td(off) Turn-off Delay Time R G=3.3Ω -2 1- ns tf Fall Time V GS=-10V - 18 - ns Ciss Input Capacitance V GS=0V - 850 1360 pF Coss Output Capacitance V DS=-15V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time I S=-5A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 2.3 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP38053M 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 135 ℃/W when mounted on Min. copper pad.
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.01E+09 Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) -10V -7.0V -6.0V -5.0V V G = -4.0V T A =25 o C 01234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =- 3A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -5A V G = -10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) 0.1 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C I D = -250uA
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 2.01E+09 Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 02468 1 0 1 2 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 2A V DS = -15V 400 800 1200 1600 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) -ID , Drain Current (A) 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A)T j =150 o C T j =25 o C V DS = -10V T j = -55 o C
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0.4 0.8 1.2 1.6 2.4 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 100 200 300 400 0 4 8 12 16 20 24 -I D , Drain Current (A) RDS(ON) (m T j =25 o C -4.5V V GS = -10V
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