AP3708N BCDSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Primary Side Control for Rectangular Constant Current and Constant V oltage Output
  • Eliminates Opto-Coupler and Secondary CV/CC Control Circuitry
  • Eliminates Control Loop Compensation Circuitry
  • Output Cable Resistor Compensation
  • Flyback Topology in DCM Operation
  • Random Frequency Modulation to Reduce System EMI
  • Valley Turn on of External Power NPN Transistor
  • Maximum Switching Frequency: 110kHz
  • Built-in Soft Start
  • Over V oltage Protection
  • Short Circuit Protection

Applications

  • Adapters/Chargers for Cell/Cordless Phones, PDAs, MP3 and Other Portable Apparatus
  • Standby and Auxiliary Power Supplies

Figure 1. Package Type of AP3708N

Figure 2. Pin Configuration of AP3708N (Top View)

1 CS The primary current sense

3 OUT This pin drives the base of external power NPN switch

4 GND Ground

5 CMP This pin connects a capacitor for output cable compensation

6 FB The voltage feedback from the auxiliary winding

7 VDD The 5V output of the internal voltage regulator

8 BIAS This pin sets the bias current inside AP3708N with an external resistor to GND

Figure 3. Functional Block Diagram of AP3708N

PRIMARY SIDE CONTROL IC FOR OFF-LINE BATTERY CHARGERS AP3708N Preliminary Datasheet BCD Semiconductor Manufacturing LimitedApr. 2009 Rev. 2. 1 Parameter Value Unit Supply V oltage VCC -0.3 to 30 V V oltage at CS, BIAS, OUT, VDD, CMP to GND -0.3 to 7 V FB input (Pin 6) -40 to 10 V Output Current at OUT Internally limited A Power Dissipation at TA=25oC 0.657 W Operating Junction Temperature 150 oC Storage Temperature -65 to 150 oC Lead Temperature (Soldering, 10s) 300 oC Thermal Resistance Junction-to-Ambient 190 oC/W ESD (Machine Model) 200 V Note 1: Stresses greater than those li sted under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Ex posure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Absolute Maximum Ratings (Note 1) Package Temperature Range Part Number Marking ID Packing Type SOIC-8 -40 to 85oC AP3708NM-G1 3708NM-G1 Tube AP3708NMTR-G1 3708NM-G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green.

Ordering Information

G1: Green AP3708N - TR: Tape and Reel Blank: TubePackage M: SOIC-8

PRIMARY SIDE CONTROL IC FOR OFF-LINE BATTERY CHARGERS AP3708N Preliminary Datasheet BCD Semiconductor Manufacturing LimitedApr. 2009 Rev. 2. 1 Parameter Symbol Conditions Min Typ Max Unit UVLO SECTION Start-up Threshold VTH (ST) 16.5 17.5 18.5 V Minimal Operating V oltage V OPR(min) After turn on 6.3 6.7 7.1 V REFERENCE VOLTAGE SECTION BIAS Pin V oltage VBIAS RBIAS=200kΩ, Before turn on 1.073 1.10 1.127 V VDD Pin V oltage VDD 4.82 5.00 5.18 V STANDBY CURRENT SECTION Start-up Current IST VCC = VTH (ST)-0.5V , RBIAS=200kΩ, Before turn on 44 52 µA Operating Current I CC(OPR) RBIAS=200kΩ 635 700 µA DRIVE OUTPUT SECTION OUT Maximum Current Sink IOUT RBIAS=200kΩ 50 mA Source 24 30 Maximum Switching Frequency R BIAS=200kΩ 110 kHz CURRENT SENSE SECTION Current Sense Threshold VCS 486 508 530 mV Pre-Current Sense VCS(PRE) 388 410 432 mV Leading Edge Blanking 430 ns FEEDBACK INPUT SECTION Feedback Pin Input Leakage Current IFB VFB=4V 1 . 82 . 2 52 . 7 µA Feedback Threshold V oltage VFB 3.99 4.03 4.07 V Enable Turn-on V oltage VFB(EN) -0.9 -0.7 -0.5 V Cable Compensation V oltage f SW=60kHz 0.40 V PROTECTION SECTION Over V oltage Protection VFB(OVP) 789 V (VCC=15V , TA=25oC, unless otherwise specified.)

Electrical Characteristics

Figure 8. Start-up Current vs. Bias Resistor Figure 9. OUT Source Current vs. Bias Resistor

the switching frequency fSW. voltage (CV) mode to regulate the output voltage. Figure 10. Simplified Flyback Converter Controlled by AP3708N Figure 11. Primary Current Waveform

1 Ipk L EgM × × =

Figure 16. 5V/1A Output for Battery Charger of Mobile Phone

PRIMARY SIDE CONTROL IC FOR OFF-LINE BATTERY CHARGERS AP3708N Preliminary Datasheet BCD Semiconductor Manufacturing LimitedApr. 2009 Rev. 2. 1 Mechanical DimensionsMechanical Dimensions Unit: mm(inch)SOIC-8 R0.150(0.006) R0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 20:1 D 1.270(0.050) TYP 0.190(0.007) 0.250(0.010) D 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) Note: Eject hole, oriented hole and mold mark is optional.

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com BCD Semiconductor Manufacturing Limited IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi- cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 MAIN SITE REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corp. 30920 Huntwood Ave. Hayward, CA 94544, USA Tel : +1-510-324-2988 Fax: +1-510-324-2788 - Headquarters BCD Semiconductor Manufacturing Limited No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Tel: +86-21-24162266, Fax: +86-21-24162277