AP30G120ASW A-POWER | Alldatasheet

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▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant Absolute Maximum Ratings , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max . junction temperature . Thermal Data Symbol Rthj-c(IGBT) Rthj-c(Diode) Rthj-a Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Min. Typ. Max. Units IGES -- + 500 nA ICES -- 1 m A VCE(sat) - 2.9 3.6 V - 3.7 - V V GE(th) 3-7 V Qg - 63 100 nC Qge -1 2- nC Qgc -3 2- nC td(on) -4 0- ns tr -4 5- ns td(off) - 125 - ns tf - 430 860 ns Eon - 1.3 - mJ Eoff - 3.1 - mJ Cies - 1400 2240 pF Coes - 120 - pF Cres -1 5- pF VF - 2.6 3 V VF -- 4 V trr -5 4- ns Qrr - 138 - nC Data and specifications subject to change without notice 1 IC ICM IC@TC=100℃ Pulsed Collector Current1 VGE IC@TC=25℃ Parameter Gate-Emitter Voltage VCE=30V Input Capacitance Storage Temperature Range +30 IF@TC=100℃ IFM Diode Continunous Forward Current Diode Pulse Forward Current Reverse Recovery Charge di/dt = 100 A/µs Forward Voltage I F=6A Forward Voltage IF=20A Reverse Recovery Time IF=10A Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified) VCC=600V, Ic=30A, VGE=15V, RG=5Ω, Inductive Load Rise Time Turn-off Delay Time Fall Time f=1.0MHz V GE=0V Reverse Transfer Capacitance Turn-On Switching Loss Turn-Off Switching Loss PD@TC=25℃ TJ TL Operating Junction Temperature Range TSTG 30A VCES VCE=VGE, IC=250uA VGE=+30V, VCE=0V Continuous Collector Current VGE=15V, IC=60A 0.6 Thermal Resistance Junction-Case 2 Continuous Collector Current Maximum Power Dissipation ℃/W A 208 120 W V A A A AP30G120ASW Symbol VCES 1200V Rating Collector-Emitter Voltage Units V1200 BIPOLAR TRANSISTOR WITH FRD. VCC=500V Test Conditions IC=30A Gate-Emitter Charge Gate Threshold Voltage VGE=15V, IC=30A VCE=1200V, VGE=0VCollector-Emitter Leakage Current Parameter Gate-to-Emitter Leakage Current Maximum Lead Temp. for Soldering Purposes Thermal Resistance Junction-Ambient Output Capacitance Turn-on Delay Time Gate-Collector Charge Total Gate Charge 201107182 RoHS-compliant Product A 300 ℃/W ℃/W Thermal Resistance Junction-Case VGE=15V Collector-Emitter Saturation Voltage Parameter Value Units -55 to 150 -55 to 150 G C E TO-3P G C E

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Saturation Voltage Fig 4. Typical Collector- Emitter Voltage Characteristics v.s. Junction Temperature Fig 5. Gate Threshold Voltage Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 120 160 0 4 8 12 16 20 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) 20V 18V 15V 12V V GE =10V T C =25 o C 100 120 048 1 2 1 6 V CE , Collector-Emitter Voltage (V) IC , Collector Current (A) 20V 18V 15V 12V V GE =10V 0 40 80 120 160 Junction Temperature ( o C) VCE(sat) ,Saturation Voltage(V) I C =6 0A I C =30A V GE =1 5V 0.4 0.8 1.2 1.6 -50 0 50 100 150 Junction Temperature ( o C ) Normalized VGE(th) (V) T C =150 o C 100 120 02468 1 0 V CE , Collector-Emitter Voltage (V) IC , Collector Current(A) V GE =15V T C =25 ℃ 400 800 1200 1600 2000 2400 1 5 9 1 31 72 12 52 93 33 7 V CE , Collector-Emitter Voltage (V) Capacitance (pF) f=1.0MHz C ies C oes C res T C =150 ℃ I C =1mA

Fig 7. Turn-off SOA Fig 8. Effective Transient Thermal Impedance Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE Fig11. Forward Characteristic of Fig 12. Gate Charge Characterisitics Diode 0 2 04 06 08 0 Q G , Gate Charge (nC) VGE , Gate -Emitter Voltage (V) I C =3 0A V CC =500V 048 1 2 1 6 2 0 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) I C =6 0A T C =25 o C 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) T C =150 o C 100 1000 1 10 100 1000 10000 V CE , Collector-Emitter Voltage(V) IC, Peak Collector Current(A) Safe Operating Area V GE =15V T C =125 o C 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 100 01234 V F , Forward Voltage (V) IF , Forward Current (A) T j =25 o CT j =150 o C I C =3 0A I C =1 5A I C =6 0A I C =3 0A I C =1 5A

Fig 13. Maximum Collector Current VS. Case Temperature 25 50 75 100 125 150 T C , Case Temperature ( ℃) IC , Maximum DC Collector Current (A)