AM29F800B-1 AMD | Alldatasheet
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5/4/98 Publication# 21631 Rev: A Amendment/+2 Issue Date: April 1998 Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements ■ Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29F800 device ■ High performance — 90 or 120 ns access time ■ Low power consumption (typical values at 5 MHz) —1 µA standby mode current — 20 mA read current (byte mode) — 28 mA read current (word mode) — 30 mA program/erase current ■ Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write cycles per sector guaranteed ■ Compatibility with JEDEC standards — Pinout and software compatible with single- power-supply Flash — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data
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The Am29F800B in Known Good Die (KGD) form is a 8 Mbit, 5.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same relia- bility and quality as AMD products in packaged form. Am29F800B Features The Am29F800B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 5.0 volt V CC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be programmed in standard EPROM programmers. This device is manufactured using AMD’s 0.35 µm process technology, and offers all the features and ben- efits of the Am29F800, which was manufactured using 0.5 µm process technology. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 5.0 volt power sup- ply for both read and write functions. Internally gener- ated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com- mands are written to the command register using standard microprocessor write timings. Register con- tents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase com- mand sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low V CC detector that automatically inhibits write opera- tions during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of mem- ory. This can be achieved via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The system can place the device into the standby mode . Power consumption is greatly reduced in this mode. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. ELECTRICAL SPECIFICATIONS Refer to the Am29F800B data sheet, PID 21504, for full electrical specifications on the Am29F800B in KGD form.
5/4/98 Am29F800B Known Good Die 3 SUPPLEMENT PRODUCT SELECTOR GUIDE DIE PHOTOGRAPH DIE PAD LOCATIONS Family Part Number Am29F800B KGD Speed Option (VCC = 5.0 V ± 10%) -90 -120 Max access time, ns (tACC ) 90 120 Max CE# access time, ns (tCE ) 90 120 Max OE# access time, ns (tOE ) 35 50 Orientation relative to leading edge of tape and reel Orientation relative to top left corner of Gel-Pak 2120191817161514 9876543214 4 4 3 4 2 4 1 4 0 3 9 3 8 3 7 AMD logo location 31302928272625242322 13 32
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Note:The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. Pad Signal Pad Center (mils) Pad Center (millimeters) XYXY 1V CC 0.00 0.00 0.0000 0.0000 2 DQ4 7.22 0.00 0.1835 0.0000 3 DQ12 13.45 0.00 0.3417 0.0000 4 DQ5 19.59 0.00 0.4977 0.0000 5 DQ13 25.82 0.00 0.6559 0.0000 6 DQ6 31.96 0.00 0.8119 0.0000 7 DQ14 38.19 0.00 0.9701 0.0000 8 DQ7 44.33 0.00 1.1261 0.0000 9 DQ15/A-1 50.56 0.00 1.2843 0.0000 10 V SS 58.61 –1.42 1.4887 –0.0361 11 BYTE# 60.50 6.84 1.5367 0.1738 12 A16 60.50 18.99 1.5367 0.4823 13 A15 60.13 279.88 1.5274 7.1090 14 A14 53.99 279.88 1.3714 7.1090 15 A13 48.28 279.88 1.2264 7.1090 16 A12 42.14 279.88 1.0704 7.1090 17 A11 36.43 279.88 0.9254 7.1090 18 A10 30.29 279.88 0.7694 7.1090 19 A9 24.58 279.62 0.6244 7.1024 20 A8 18.34 279.88 0.4659 7.1090 21 WE# 12.63 279.88 0.3209 7.1090 22 RESET# 2.54 283.85 0.0646 7.2098 23 RY/BY# –10.00 283.85 –0.2538 7.2098 24 A18 –20.07 279.88 –0.5096 7.1090 25 A17 –25.78 279.88 –0.6546 7.1090 26 A7 –31.92 279.88 –0.8106 7.1090 27 A6 –37.63 279.88 –0.9556 7.1090 28 A5 –43.77 279.88 –1.1116 7.1090 29 A4 –49.48 279.88 –1.2566 7.1090 30 A3 –55.62 279.88 –1.4126 7.1090 31 A2 –61.33 279.88 –1.5576 7.1090 32 A1 –67.47 279.88 –1.7136 7.1090 33 A0 –67.84 18.99 –1.7229 0.4823 34 CE# –67.84 6.84 –1.7229 0.1738 35 V 37 DQ0 –49.86 0.00 –1.2661 0.0000 38 DQ8 –43.63 0.00 –1.1082 0.0000 39 DQ1 –37.49 0.00 –0.9522 0.0000 40 DQ9 –31.26 0.00 –0.7940 0.0000 41 DQ2 –25.12 0.00 –0.6380 0.0000 42 DQ10 –18.89 0.00 –0.4798 0.0000 43 DQ3 –12.75 0.00 –0.3238 0.0000 44 DQ11 –6.52 0.00 –0.1656 0.0000
5/4/98 Am29F800B Known Good Die 5 SUPPLEMENT
ORDERING INFORMATION
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Valid Combinations Valid Combinations list configurations planned to be sup- ported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29F800B DEVICE NUMBER/DESCRIPTION Am29F800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
-90 DP C DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this doc- ument. It is entered in the revision field of AMD stand- ard product nomenclature. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) E = Extended (–55°C to +125°C) PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 180 die per 5 tray stack DG = Gel-Pak ® Die Tray 378 die per 6 tray stack DT = Surftape™ (Tape and Reel) 1800 per 7-inch reel DW = Gel-Pak ® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity SPEED OPTION See Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector T Valid Combinations Am29F800BT-90, Am29F800BB-90, DPC 1, DPI 1, DPE 1, DGC 1, DGI 1, DGE 1, DTC 1, DTI 1, DTE 1, DWC 1, DWI 1, DWE 1 Am29F800BT-120 Am29F800BB-120
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Figure 1. AMD KGD Product Test Flow
5/4/98 Am29F800B Known Good Die 7 SUPPLEMENT PHYSICAL SPECIFICATIONS may be grounded (optional) DC OPERATING CONDITIONS Junction Temperature Under Bias . .TJ (max) = 130°C Operating Temperature MANUFACTURING INFORMATION SPECIAL HANDLING INSTRUCTIONS Processing Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250°C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30°C in a nitrogen- purged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures.
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TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE All transactions relating to AMD Products under this agreement shall be subject to AMD’s standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right to make at any time and from time to time. In the event of conflict between the provisions of AMD’s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. AMD warrants articles of its manufacture against defective materials or workmanship for a period of ninety (90) days from date of shipment. This warranty does not extend beyond AMD’s customer, and does not extend to die which has been affixed onto a board or substrate of any kind. The liability of AMD under this warranty is limited, at AMD’s option, solely to repair or to replacement with equivalent articles, or to make an appropriate credit adjustment not to exceed the original sales price, for articles returned to AMD, provided that: (a) The Buyer promptly notifies AMD in writing of each and every defect or nonconformity in any article for which Buyer wishes to make a warranty claim against AMD; (b) Buyer obtains authorization from AMD to return the article; (c) the article is returned to AMD, transportation charges paid by AMD, F .O.B. AMD’s fac- tory; and (d) AMD’s examination of such article dis- closes to its satisfaction that such alleged defect or nonconformity actually exists and was not caused by negligence, misuse, improper installation, accident or unauthorized repair or alteration by an entity other than AMD. The aforementioned provisions do not extend the original warranty period of any article which has either been repaired or replaced by AMD. THIS WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR A P ARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON AMD’S PART, AND IT NEITHER ASSUMES NOR AUTHOR- IZES ANY OTHER PERSON TO ASSUME FOR AMD ANY OTHER LIABILITIES. THE FOREGOING CON- STITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD SHALL NOT IN ANY EVENT BE LIABLE FOR DAMAGES BY REASON OF FAILURE OF ANY PRODUCT TO FUNCTION PROPERL Y OR FOR ANY SPECIAL, INDIRECT, CONSEQUENTIAL, INCI- DENTAL OR EXEMPLARY DAMAGES, INCLUDING BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS OF USE OR COST OF LABOR BY REASON OF THE FACT THAT SUCH ARTICLES SHALL HAVE BEEN DEFECTIVE OR NON CONFORMING. Buyer agrees that it will make no warranty representa- tions to its customers which exceed those given by AMD to Buyer unless and until Buyer shall agree to indemnify AMD in writing for any claims which exceed AMD’s warranty. Buyer assumes all responsibility for successful die prep, die attach and wire bonding proc- esses. Due to the unprotected nature of the AMD Prod- ucts which are the subject hereof, AMD assumes no responsibility for environmental effects on die. AMD products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reason- ably be expected to result in a personal injury. Buyer’s use of AMD products for use in life support applications is at Buyer’s own risk and Buyer agrees to fully indem- nify AMD for any damages resulting in such use or sale.
5/4/98 Am29F800B Known Good Die 9 SUPPLEMENT REVISION SUMMARY FOR AM29F800B KGD Revision A+1, A+2 Distinctive Characteristics Changed typical program/erase time to 30 mA to match the CMOS DC Characteristics table in the Am29F400B full data sheet. The minimum guarante per sector is now 1 million cycles. Pad Description Corrected the following dimensions: X (mils): pads 15, 18, 36 Y (mils): pads 10–12, 35, 36 X (mm): pads 2–22, 37, 38 Y (mm): pads 10–12, 23–32, 35, 36 Physical Specifications Changed die thickness specification to ~20 mils. Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.