28LV64 CATALYST | Alldatasheet
Document overview
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Technical content
© 2004 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice ■ CMOS and TTL compatible I/O ■ Automatic page write operation: – 1 to 32 bytes in 5ms – Page load timer ■ End of write detection: – Toggle bit – DATADATADATADATADATA polling ■ Hardware and software write protection ■ 100,000 program/erase cycles ■ 100 year data retention CAT28LV64 64K-Bit CMOS PARALLEL EEPROM
DESCRIPTION
The CAT28LV64 is a low voltage, low power, CMOS parallel EEPROM organized as 8K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto- clear and V CC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bit signal the start and end of the self- timed write cycle. Additionally, the CAT28LV64 features hardware and software write protection. The CAT28LV64 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDEC approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32- pin PLCC packages. BLOCK DIAGRAM
FEATURES
■ 3.0V to 3.6 V Supply ■ Read access times: – 150/200/250ns ■ Low power CMOS dissipation: – Active: 8 mA max. – Standby: 100 µA max. ■ Simple write operation: – On-chip address and data latches – Self-timed write cycle with auto-clear ■ Fast write cycle time: – 5ms max. ■ Commercial, industrial and automotive temperature ranges Doc. No. 1010, Rev. D ADDR. BUFFER & LATCHES ADDR. BUFFER & LATCHES INADVERTENT WRITE PROTECTION CONTROL LOGIC TIMER ROW DECODER COLUMN DECODER HIGH VOLTAGE GENERATOR A5–A12 CE OE WE A0–A4 I/O0–I/O7 I/O BUFFERS 8,192 x 8 E2PROM ARRAY
32 BYTE PAGE
2Doc. No. 1010, Rev. D PIN FUNCTIONS Pin Name Function Pin Name Function A0–A12 Address Inputs WE Write Enable I/O0–I/O7 Data Inputs/Outputs V CC 3.0 to 3.6 V Supply CE Chip Enable V SS Ground OE Output Enable NC No Connect PIN CONFIGURATION I/O2 VSS I/O6 I/O5 I/O0 I/O1 OE A10 CE I/O7 NC A12 A11 VCC WE NC I/O4 I/O3 I/O2 VSS I/O6 I/O5 I/O0 I/O1 OE A10 CE I/O7 NC A12 A11 VCC WE NC I/O4 I/O3 NC I/O0 A11 NC OE A10 CE
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3 Doc. No. 1010, Rev. D *COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specifica- tion is not implied. Exposure to any absolute maximum rating for extended periods may affect device perfor- mance and reliability. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin with Package Power Dissipation RELIABILITY CHARACTERISTICS Symbol Parameter Min. Max. Units Test Method NEND(1) Endurance 10 5 Cycles/Byte MIL-STD-883, Test Method 1033 TDR(1) Data Retention 100 Years MIL-STD-883, Test Method 1008 VZAP(1) ESD Susceptibility 2000 Volts MIL-STD-883, Test Method 3015 ILTH(1)(4) Latch-Up 100 mA JEDEC Standard 17 Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Ma ximum DC voltage on output pins is V CC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns. (3) Output shorted for no more than one second. No more than one output shorted at a time. (4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V CC +1V. MODE SELECTION Mode CECECECECE WEWEWEWEWE OEOEOEOEOE I/O Power Read L H L D OUT ACTIVE Byte Write (WE Controlled) L H D IN ACTIVE Byte Write (CE Controlled) L H D IN ACTIVE Standby, and Write Inhibit H X X High-Z STANDBY Read and Write Inhibit X H H High-Z ACTIVE CAPACITANCE TA = 25°C, f = 1.0 MHz Symbol Test Max. Units Conditions CI/O(1) Input/Output Capacitance 10 pF V I/O = 0V CIN(1) Input Capacitance 6 pF V IN = 0V
4Doc. No. 1010, Rev. D 28LV64-15 28LV64-20 28LV64-25 tRC Read Cycle Time 150 200 250 ns tCE CE Access Time 150 200 250 ns tAA Address Access Time 150 200 250 ns tOE OEAccess Time 70 80 100 ns tLZ(1) CE Low to Active Output 0 0 0 ns tOLZ(1) OE Low to Active Output 0 0 0 ns tHZ(1)(2) CE High to High-Z Output 50 50 55 ns tOHZ(1)(2) OE High to High-Z Output 50 50 55 ns Output Hold from tOH(1) Address Change 0 0 0 ns D.C. OPERATING CHARACTERISTICS Vcc = 3.0V to 3.6V, unless otherwise specified. Limits Symbol Parameter Min. Typ. Max. Units Test Conditions ICC VCC Current (Operating, TTL) 8 mA CE = OE = VIL, f = 1/tRC min, All I/O’s Open ISBC(3) VCC Current (Standby, CMOS) 100 µA CE = VIHC, All I/O’s Open ILI Input Leakage Current –1 1 µAV IN = GND to VCC ILO Output Leakage Current –5 5 µAV OUT = GND to VCC, CE = VIH VIH(3) High Level Input Voltage 2 V CC +0.3 V VIL Low Level Input Voltage –0.3 0.6 V VOH High Level Output Voltage 2 V I OH = –100µA VOL Low Level Output Voltage 0.3 V I OL = 1.0mA VWI Write Inhibit Voltage 2 V Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer. (3) V IHC = VCC –0.3V to VCC +0.3V. A.C. CHARACTERISTICS, Read Cycle Vcc = 3.0V to 3.6V, unless otherwise specified.
11 Doc. No. 1010, Rev. D
ORDERING INFORMATION
Notes: (1) The device used in the above example is a CAT28LV64NI-25T (PLCC, Industrial temperature, 250 ns Access Time, Tape & Reel). Prefix Device # Suffix 28LV64 Product Number CAT Optional Company ID NI T Tape & Reel Package P: PDIP J: SOIC (JEDEC) K: SOIC (EIAJ) N: PLCC T13: TSOP (8mmx13.4mm) -25 Temperature Range Blank = Commercial (0°C to +70°C) I = Industrial (-40°C to +85°C) A = Automotive (-40°C to +105°C)* Speed 15: 150ns 20: 200ns 25: 250ns * -40°C to +125°C is available upon request L: PDIP (Lead free, Halogen free) W: SOIC (JEDEC) (Lead free, Halogen free) X: SOIC (EIAJ) (Lead free, Halogen free) G: PLCC (Lead free, Halogen free) H13: TSOP (8mmx13.4mm) (Lead free, Halogen free)
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