AP20WN170J A-POWER | Alldatasheet
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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 200V ▼ Simple Drive Requirement RDS(ON) 170mΩ ▼ Lower Gate Charge ID 4 18A ▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy3 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.5 ℃/W Rthj-a 110 ℃/W AP20WN170J Halogen-Free Product 201703071 Maximum Thermal Resistance, Junction-ambient Parameter Rating Drain-Source Voltage 200 Total Power Dissipation 83.3 Gate-Source Voltage + 20 Pulsed Drain Current1 Drain Current, VGS @ 10V4 Parameter Total Power Dissipation 1.13 Storage Temperature Range Operating Junction Temperature Range -55 to 150 Thermal Data -55 to 150 G D S AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S AP20WN170 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The straight lead version TO-251 package is widely preferred for all commercial-industrial through hole applications. G D S TO-251(J)
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 200 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=9A - - 170 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=20V, ID=10A - 16 - S IDSS Drain-Source Leakage Current VDS=160V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=18A - 27 43.2 nC Qgs Gate-Source Charge V DS=160V - 4 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 8.5 - nC td(on) Turn-on Delay Time V DS=100V - 8 - ns tr Rise Time I D=18A - 28 - ns td(off) Turn-off Delay Time R G=10Ω -4 0- ns tf Fall Time V GS=10V - 52 - ns Ciss Input Capacitance V GS=0V - 1040 1664 pF Coss Output Capacitance V DS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 26 - pF Rg Gate Resistance f=1.0MHz - 2.4 4.8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=9A, VGS=0V - - 1.5 V trr Reverse Recovery Time I S=18A, VGS=0V - 120 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 580 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP20WN170J 4.Ensure that the junction temperature does not exceed TJmax..
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP20WN170J 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 8.0V 7.0V 6.0V V G =5.0V 048 1 2 1 6 2 0 2 4 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 8.0V 7.0V 6.0V V G =5.0V T C =150 o C 120 130 140 150 160 170 180 2468 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =9A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =9A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Normalized BVDSS v.s. Junction Fig 12. Transfer Characteristics Temperature 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 400 800 1200 1600 2000 0 40 80 120 160 200 240 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 1 02 03 04 0 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =18A V DS =160V 0.01 0.1 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =20V T j = -55 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA
Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance 100 200 300 400 500 048 1 2 1 6 2 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 100 120 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) V GS =10V
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