20T03GH

AP20T03GH A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Lower Gate Charge BVDSS 30V ▼ ▼ ▼ ▼ Simple Drive Requirement RDS(ON) 50mΩ ▼ ▼ ▼ ▼ Fast Switching Characteristic ID 12.5A

Description

ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 10 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data & specifications subject to change without notice AP20T03GH/J Parameter Rating Pb Free Plating Product Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current 12.5 Continuous Drain Current 8 Pulsed Drain Current 1 40 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.1 Storage Temperature Range Total Power Dissipation 12.5 -55 to 150 200107041 Thermal Data Parameter The TO-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20T03GJ) is available for low-profile applications. G D S TO-251(J) G D S TO-252(H) G D S ± 20

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 -V / ℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 50 mΩ VGS=4.5V, ID=5A - - 80 mΩ VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=5V, ID=5A - 6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=- - nA Qg Total Gate Charge2 ID=10A - 4 7 nC Qgs Gate-Source Charge V DS=24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 2.3 - nC td(on) Turn-on Delay Time2 VDS=15V - 6 - ns tr Rise Time I D=10A - 30 - ns td(off) Turn-off Delay Time R G=3.3Ω,VGS=10V - 10 - ns tf Fall Time R D=1.5Ω -3- ns Ciss Input Capacitance V GS=0V - 270 430 pF Coss Output Capacitance V DS=25V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=5A, VGS=0V - - 1.3 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP20T03GH/J ±100± 20V ±100

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V 0112233 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V V G =3.0V T C =150 o C 0.5 0.8 1.0 1.3 1.5 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =8A V G =10V V SD , Source-to-Drain Voltage (V) Is (A) T j =25 o CT j =150 o C 1.0 1.5 2.0 2.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) VGS(th) (V) 3579 1 1 V GS , Gate-to-Source Voltage (V) RDS(ON)(m ΩΩΩΩ) I D =5A T C =25 o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0369 1 2 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) V DS =15V V DS =20V V DS =24V I D =1 0A 100 1000 1 5 9 1 31 72 12 52 9 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) ID (A) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse