1255P | DigiCamel IC Datasheet

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1 www.semtech.com PRELIMINARYPROTECTION PRODUCTS - RailClamp®®®®® RClamp1255P Low Capacitance RClamp® Surge Protection for uUSB Interfaces Description Features Circuit Diagram Pin Configuration (Top View) Revision 06/18/2013

Applications

Mechanical Characteristics  SLP2018P6 6L package  Pb-Free, Halogen Free, RoHS/WEEE Compliant  Nominal Dimensions: 2.0 x 1.8 x 0.57 mm  Lead Finish: NiPdAu  Molding compound flammability rating: UL 94V-0  Marking : Marking Code + Date Code  Packaging : Tape and Reel VBus ID GND GND GND GND RailClamp® TVS arrays are low capacitance ESD protection devices designed to protect high speed data interfaces. The RClamp ®1255P provides dedicated surge and ESD protection for uUSB ports. It is de- signed to replace multiple discrete components in portable applications. This device features low capaci- tance TVS diodes for protection of the USB data (DP, DM) and USB ID pins operating up to +/- 4 volts. These diodes provide ESD protection to ±10kV contact discharge per IEC 61000-4-2. Loading capacitance on these lines is <0.50pF. An integrated 12 volt TVS diode is used for protection of the USB voltage bus. The VBus TVS is designed with a high surge current capability of 100A (tp=8/20us) and low clamping voltage. The RClamp1255P is in a 6-pin SLP2018P6 package. It measures 2.0 x 1.8mm with a nominal height of 0.57mm. This highly integrated device requires less board space than existing solutions. The combination of small size, low capacitance, and high level of surge and ESD protection makes this device a flexible solution for protection of USB interfaces in mo- bile phones, laptops, and other portable electonics.  ESD and surge protection for USB Voltage Bus to IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC 61000-4-5 (Lightning) 100A (8/20 μs) IEC 61000-4-4 (EFT) 40A (5/50ns)  ESD protection for USB data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±10kV (contact)  Protects USB DP, DM, and ID Pins operating up to +/- 4V  Protects USB VBus operating up to 12V  Low capacitance (<0.50pF) on DP, DM, and ID Pins  Low clamping voltage  Low dynamic resistance on DP, DM, and ID Pins  Solid-state silicon-avalanche technology  USB 2.0  USB OTG  uUSB 23 4 5, 6, 12V Tabs

2© 2013 Semtech Corporation www.semtech.com PRELIMINARYPROTECTION PRODUCTS RClamp1255P Absolute Maximum Rating Electrical Characteristics (T=25 oC) gnitaRl obmySe ulaVs tinU SVTDIBSU,MD,PDS VTDIBSU,MD,PD SVTDIBSU,MD,PD SVTDIBSU,MD,PDS VTDIBSU,MD,PD )sμ02/8=pt(rewoPesluPkaePP kp 04s ttaW )sμ02/8=pt(tnerruCesluPkaePI PP 3A )riA(2-4-00016CEIrepDSE )tcatnoC(2-4-00016CEIrepDSE V DSE 51± 01± Vk erutarepmeTgnitarepOT J 521+ot55-C ° erutarepmeTegarotST GTS 051+ot55-C ° SVTsuBVS VTsuBV SVTsuBV SVTsuBVS VTsuBV )sμ02/8=pt(rewoPesluPkaePP kp 0052s ttaW )sμ02/8=pt(tnerruCesluPkaePI PP 001A )riA(2-4-00016CEIrepDSE )tcatnoC(2-4-00016CEIrepDSE V DSE 03± 03± Vk erutarepmeTgnitarepOT J 521+ot55-C ° erutarepmeTegarotST GTS 051+ot55-C ° )1niP(SVTsuBV) 1niP(SVTsuBV )1niP(SVTsuBV )1niP(SVTsuBV) 1niP(SVTsuBV retemaraPl obmySs noitidnoCm uminiMl acipyTm umixaMs tinU egatloVffO-dnatSesreveRV MWR DNGot1niP2 1V egatloVnwodkaerBesreveRV RB It ,Am1= DNGot1niP 5.315 .415 .61V tnerruCegakaeLesreveRI R V MWR V21= DNGot1niP 003.0A μ egatloVdrawroFV F If Am01= 1niPotDNG 6.07 .00 .1V egatloVgnipmalCV C I PP sμ02/8=pt,A03= dnuorGot1niP 5.518 1V egatloVgnipmalCV C I PP sμ02/8=pt,A001= dnuorGot1niP 5.815 2V ecnaticapaCnoitcnuJC j VR zHM1=f,V0= DNGot1niP 05910 052F p

3© 2013 Semtech Corporation www.semtech.com PRELIMINARYPROTECTION PRODUCTS RClamp1255P )4,3,2sniP(DIBSU,PD,MD) 4,3,2sniP(DIBSU,PD,MD )4,3,2sniP(DIBSU,PD,MD )4,3,2sniP(DIBSU,PD,MD) 4,3,2sniP(DIBSU,PD,MD retemaraPl obmySs noitidnoCm uminiMl acipyTm umixaMs tinU egatloVffO-dnatSesreveRV MWR niPD NGot4,3,24 V egatloVnwodkaerBesreveRV RB ,Am1=tI niP4 ,3,2D NGot 5.47 .53 .6V tnerruCegakaeLesreveRI R V MWR ,V0.2= niP4 ,3,2D NGot 500.0<0 20.0A μ tnerruCegakaeLesreveRI R V MWR ,V0.4= niP4 ,3,2D NGot 500.00 01.0A μ egatloVgnipmalCV C I PP sμ02/8=pt,A1= niP4 ,3,2D NGot 5.01V egatloVgnipmalCV C I PP sμ02/8=pt,A3= niP4 ,3,2D NGot 5.21V ecnatsiseRcimanyD 1 R nyD A61=ppIotA4=ppI0 7.0s mhO A61-=ppIotA4-=ppI0 7.0s mhO ecnaticapaCnoitcnuJC j VR ,zHM1=f,V0= niP4 ,3,2D NGot 53.00 5.0F p Electrical Characteristics (T=25 oC) Notes 1)Transmission Line Pulse Test (TLP) Settings: t p = 100ns, t r = 0.2ns, I TLP and V TLP averaging window: t 1 = 70ns to t2 = 90ns

4© 2013 Semtech Corporation www.semtech.com PRELIMINARYPROTECTION PRODUCTS RClamp1255P Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current VBus Pin (Pin 1) Clamping Voltage vs. Peak Pulse Current D+, D-. ID Pins (Pins 2, 3, 4) Non-Repetitive Peak Pulse Power vs. Pulse Time D+, D-. ID Pins (Pins 2, 3, 4) Forward Voltage vs. Peak Pulse Current VBus Pin (Pin 1) Capacitance vs. Reverse Voltage D+, D-. ID Pins (Pins 2, 3, 4) VBus Pin (Pin 1) 0.1 100 0.1 1 10 100 1000 Pulse Duration - tp (µs) Peak Pulse Power - PPP (kW) TA = 25OC 0 2 04 06 08 0 1 0 0 1 2 0 Peak Pulse Current - I pp (A) Clamping Voltage - VC (V) Waveform Parameters: tr = 8µs td = 20µs 00 . 511 . 522 . 533 . 5 Peak Pulse Current - I pp (A) Clamping Voltage - VC (V) Waveform Parameters: tr = 8µs td = 20µs 0.5 1.5 2.5 3.5 0 2 04 06 08 0 1 0 0 1 2 0 Peak Pulse Current - Ipp (A) Forward Clamping Voltage - VC (V) Waveform Parameters: tr = 8µs td = 20µs 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 012345 Reverse Voltage - V R (V) Capacitance - Cj (pF) f = 1MHz 100 1000 0.1 1 10 100 1000 Pulse Duration - tp (µs) Peak Pulse Power - PPP (W) DR040412-40 TA = 25OC

5© 2013 Semtech Corporation www.semtech.com PRELIMINARYPROTECTION PRODUCTS RClamp1255P Typical Characteristics ESD Clamping (+8kV Contact per IEC 61000-4-2) D+, D-. ID Pins (Pins 2, 3, 4) ESD Clamping (-8kV Contact per IEC 61000-4-2) D+, D-. ID Pins (Pins 2, 3, 4) ESD Clamping (+8kV Contact per IEC 61000-4-2) VBus Pin (Pin 1) ESD Clamping +30kV Contact per IEC 61000-4-2) VBus Pin (Pin 1) ESD Clamping (-8kV Contact per IEC 61000-4-2) VBus Pin (Pin 1) ESD Clamping -30kV Contact per IEC 61000-4-2) VBus Pin (Pin 1) -10 0 10 20 30 40 50 60 70 80 Time (ns) Clamping Voltage (V) Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane -40 -35 -30 -25 -20 -15 -10 -10 0 10 20 30 40 50 60 70 80 Time (ns) Clamping Voltage (V) Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane -10 -10 0 10 20 30 40 50 60 70 80 Time (ns) Clamping Voltage (V) Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane -70 -60 -50 -40 -30 -20 -10 -10 0 10 20 30 40 50 60 70 80 Time (ns) Clamping Voltage (V) Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane -50 100 150 200 -10 0 10 20 30 40 50 60 70 80 Time (ns) Clamping Voltage (V) Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 40dB attenuator. ESD gun return path connected to ESD ground plane AR_2‐G+8kV -200 -150 -100 -50 -10 0 10 20 30 40 50 60 70 80 Time (ns) Voltage (V) Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 40dB attenuator. ESD gun return path connected to ESD ground plane AR_2‐G‐8kV

6© 2013 Semtech Corporation www.semtech.com PRELIMINARYPROTECTION PRODUCTS RClamp1255P Typical Characteristics TLP Characteristic (Positive Pulse) D+, D-. ID Pins (Pins 2, 3, 4) TLP Characteristic (Negative Pulse) D+, D-. ID Pins (Pins 2, 3, 4) Non-Repetitive Peak Pulse Power Derating Curve Typical Insertion Loss S21 D+, D-. ID Pins (Pins 2, 3, 4) Analog Crosstakk D+, D-. ID Pins (Pins 2, 3, 4) 100 120 0 25 50 75 100 125 150 Ambient Temperature - T A (OC) % of Rated Power or IPP DR040512:25:125:150 0 5 10 15 20 25 30 TLP Voltage (V) TLP Current (A) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns -25 -20 -15 -10 -30 -25 -20 -15 -10 -5 0 TLP Voltage (V) TLP Current (A) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns 1 2 3 4 START . 030 MHz 3 STOP 000 . 000 000 MHz CH1 S21 LOG 6 dB / REF 0 dB 1: - .05230 dB

800 MHz

2: - .05140 dB

900 MHz

3: - .01000 dB

1.8 GHz

4: - .09570 dB

2.5 GHz

5: - .01300 dB

2.7 GHz

-6 dB -12 dB -18 dB -24 dB -30 dB -36 dB GHz 100 MHz GHz MHz MHz -42 dB -48 dB START . 030 MHz 3 STOP 000 . 000 000 MHz CH1 S21 LOG 20dB / REF 0 dB 0 dB -20 dB -40 dB -60 dB -80 dB -100 dB -120 dB -140 dB -160 dB

8© 2013 Semtech Corporation www.semtech.com PRELIMINARYPROTECTION PRODUCTS RClamp1255P retemaraPylbmessAn oitadnemmoceR ngiseDlicnetSredloSd ehsilop-ortcelE,tucresaL epahserutrepAr alugnatceR ssenkcihTlicnetSredloS) "400.0(mm001.0 epyTetsaPredloSr ellamsroerehpsezis3epyT eliforPwolfeRredloS0 20-DTS-JCEDEJreP ngiseDdaPredloSBCPd enifedksamredloS-noN hsiniFdaPBCPu AiNROPSO Recommended Mounting Pattern Applications Information Land Pattern - SLP2018P6 THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR NOTES: COMPANY'S MANUFACTURING GUIDELINES ARE MET. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).1. DIM X Y G C MILLIMETERS (1.95) 0.20 0.60 0.80 1.35 DIMENSIONS 2.55Z P 0.40 Y H K X P/2 P 0.70 1.40 P1/2 K/2 G Z(C) K 0.84 H 0.45 Stencil Opening Land Pad ( Follow drawing ) .45 .84 .25 .70 1.80 2.00 All Dimensions are in mm. Land Pad. Stencil opening Component

0.80 BSC

0.05 0.65 DIMENSIONS MIN 0.00 NOM 0.50 0.03 (0.127) 0.575 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). NOTES: 1.80 E 1.70 1.90 bbb C A B e 0.40 BSC L 0.25 0.30 0.35 PIN 1 INDICATOR (LASER MARK) A B C SEATING PLANEaaa C D E A2 A1 A e/2 e LxN bxN e1/2 E/2 R0.20 E1/2 0.70 1.40 D1 0.45 0.84E1 0.550.30 0.69 0.94 D/2 2.00 2.101.90 YW = Date Code PIN 1 INDICATOR (LASER MARK) 12P YW

Ordering Information

RailClamp and RClamp are trademarks of Semtech Corporation. Carrier Tape Specification rebmuNtraP repytQ leeR eziSleeR TGT.P5521pmalCR0 00,01h cnI31 Device Orientation in Tape Pin 1 Location (Towards Sprocket Holes) 12P YW 12P YW 12P YW Contact Information Semtech Corporation Protection Products Division

200 Flynn Road, Camarillo, CA 93012

Phone: (805)498-2111 FAX (805)498-3804

Product Information

1255P specifications and overview.

Summary

Protects USB VBus operating up to 12V

Description

Protects USB VBus operating up to 12V

Source title 1255P Datasheet(PDF) - Gennum Corporation

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