AP10P230H A-POWER | Alldatasheet
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Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 230mΩ ▼ Fast Switching Characteristic ID -8.5A ▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W Rthj-a 62.5 ℃/W Rating -100 +20 Total Power Dissipation3 2 Total Power Dissipation Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Halogen-Free Product -32 34.7 -55 to 150 201706011 -8.5 8.8 Drain Current, VGS @ 10V -5.4 Maximum Thermal Resistance, Junction-ambient (PCB mount)3 -55 to 150 Parameter Operating Junction Temperature Range Thermal Data Pulsed Drain Current1 Storage Temperature Range AP10P230 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designe r with an extreme efficient device for use in a wide range of powe r applications. The TO-252 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S G D S TO-252(H)
Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4.2A - - 230 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-4.2A - 14 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-4.2A - 32 51.2 nC Qgs Gate-Source Charge V DS=-50V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 5 - nC td(on) Turn-on Delay Time V DS=-50V - 11 - ns tr Rise Time I D=-4.2A - 10 - ns td(off) Turn-off Delay Time R G=3.3Ω -4 3- ns tf Fall Time V GS=-10V - 26 - ns Ciss Input Capacitance V GS=0V - 1840 2944 pF Coss Output Capacitance V DS=-50V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-4.2A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-4.2A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 34 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 4.Starting Tj=25oC , VDD=-50V , L=1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.Surface mounted on 1 in2 copper pad of FR4 board
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 105 109 113 117 121 125 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -4.2 A T C =25 ℃ 0 4 8 12 16 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =2 5o C -1 0V -8.0V - 7.0 V - 6.0 V V G = - 5.0V 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = - 4.2 A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.5 1.0 1.5 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = - 250uA 0 4 8 12 16 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T C =150 o C -10V -8.0V -7.0V -6.0V V G = -5.0V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Typical Power Dissipation Fig 12. Gate Charge Waveform Q VG -10V QGS QGD QG Charge 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) V DS = -50 V I D = - 4.2 A 1000 2000 3000 4000 1 21 41 61 81 101 121 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 0 50 100 150 T C , Case Temperature ( o C ) PD (W)
Fig 13. Normalized BVDSS v.s. Junction Fig 14. Transfer Characteristics Temperature Resistance 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D = -1mA 200 400 600 800 0 4 8 12 16 20 24 -I D , Drain Current (A) RDS(ON) (m T j =25 o C V GS = -10V 0123456 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o C T j =25 o CV DS = -10V 25 50 75 100 125 150 T C , Case Temperature ( o C ) -ID , Drain Current (A)
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