10N4R5

AP10N4R5P A-POWER | Alldatasheet

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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Rg & UIS Test BVDSS 100V ▼ Simple Drive Requirement RDS(ON) 4.5mΩ ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W PD@TA=25℃ W EAS Single Pulse Avalanche Energy4 mJ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.9 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Parameter Total Power Dissipation 2 Storage Temperature Range Operating Junction Temperature Range -55 to 150 Thermal Data -55 to 150 Total Power Dissipation 138.8 Gate-Source Voltage + 20 Pulsed Drain Current1 Drain Current, VGS @ 10V3 120 Drain Current, VGS @ 10V Drain Current, VGS @ 10V3(Silicon Limited) 135 Parameter Rating Drain-Source Voltage 100 384 AP10N4R5P Halogen-Free Product 201705103 400 G D S G D S TO-220(P) AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S G D S TO-220(P) AP10N4R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.

Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=50A - - 4.5 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance V DS=5V, ID=50A - 64 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=50A - 110 176 nC Qgs Gate-Source Charge V DS=50V - 35 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 45 - nC td(on) Turn-on Delay Time V DS=50V - 24 - ns tr Rise Time I D=50A - 100 - ns td(off) Turn-off Delay Time R G=3.3Ω -4 0- ns tf Fall Time V GS=10V - 90 - ns Ciss Input Capacitance V GS=0V - 5700 9120 pF Coss Output Capacitance V DS=50V - 1175 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 7.5 - pF Rg Gate Resistance f=1.0MHz - 2.1 4.2 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=50A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=50A, VGS=0V - 70 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 97 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A . 4.Starting T j=25oC , VDD=50V , L=3mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AP10N4R5P

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature AP10N4R5P 100 200 300 400 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 10V 9.0V 8.0V 7.0V V G =6.0V 120 160 200 240 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 10V 9.0V 8.0V 7.0V 6.0V V G =5.0V T C =150 o C 56789 1 0 V GS Gate-to-Source Voltage (V) RDS(ON) (m I D =50A T C =25 o C 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =50A V G =10V 0.1 100 V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Normalized VGS(th) I D =250uA

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 2000 4000 6000 8000 10000 1 21 41 61 81 101 121 V DS ,Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0 40 80 120 160 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =50A V DS =50V 0.1 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) 120 160 25 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Drain Current (A) Limited by package 120 160 02468 1 0 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation Resistance 0 40 80 120 I D , Drain Current (A) RDS(ON) (m T j =25 o C 120 160 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) V GS =10V

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